H-bridge drive utilizing a pair of high and low side MOSFETs in a common insulation housing

• US 6,747,300 B2
• Filed: 03/04/2002
• Issued: 06/08/2004
• Est. Priority Date: 03/04/2002
• Status: Expired due to Term

• Current Assignee: Infineon Technologies Americas Corp. (Infineon Technologies AG)
• Original Assignee: Ternational Rectifier Corporation
• Inventors: Nadd, Bruno C., Thiery, Vincent, de Frutos, Xavier, Lee, Chik Yam
• Primary Examiner(s): Chambliss, Alonzo
• Application Number:
  US10/091,194
• Publication Number:
  US 20030164545A1
• Time in Patent Office: 827 Days
• Field of Search: 257/341, 257/342, 257/343, 257/355, 257/213, 257/288, 257/327, 257/335, 257/356, 257/368, 257/365, 257/366, 257/401, 257/678, 257/723-725, 257/734, 257/787, 361/23, 361/24, 361/30, 361/33, 361/91.1, 361/118, 361/139, 361/152, 361/1, 361/28, 361/88, 361/90, 361/91.3, 361/93.1, 361/93.9, 361/94, 361/103, 438/142, 438/197, 438/275-277, 438/284, 438/106, 438/107, 438/109, 438/127
• US Class Current: 257/288
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48137 the bodies being arranged next to each other, e.g. on a common substrate
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/13055 Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/13091 Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H02H 7/0838 with H-bridge circuit
• CPC Class Codes: H02P 2203/07 Motor variable determination based on the ON-resistance of a power switch, i.e. the voltage across the switch is measured during the ON state of the switch and used to determine the current in the motor and to calculate the speed
• CPC Class Codes: H02P 7/04 by means of a H-bridge circuit

Abstract

A fully protected H-bridge for a d-c motor consists of two high side MOSFETs and a control and logic IC on a first conductive heat sink all within a first package and two discrete low side MOSFETs. The entire bridge is controlled by the IC. Shoot thru protection is provided for each leg, and a PMW soft start sequence is provided through the control of the low side MOSFETs, programed by an external, chargeable RC circuit. Input signals to the high side MOSFETs select the operation modes. Protective circuits are provided for short circuit current and over current conditions. Sleep mode and braking/non braking control is also provided.

Claims

1. An H-bridge driver for driving an electrical load;

said H-bridge driver comprising first and second high side MOSFETs and first and second low side MOSFETs;

each of said MOSFETs having respective drain, source and control electrodes;

the drain electrodes of said high side MOSFETs and the source electrodes of said low side MOSFETs connected to power input terminals;

the source electrodes of said first and second high side MOSFETs connected to the drain electrodes of said first and second low side MOSFETs respectively at first and second nodes which define output bridge terminals;

a control IC for controlling the operation of said high side and low side MOSFETs;

said control IC having input terminals connectable to receive input control signals from an exterior bridge control circuit and having output terminals connected to said control electrodes of said high side MOSFETs;

a support for supporting said first and second high side MOSFETs and said control IC; and

a common insulation housing enclosing said first and second high side MOSFETs and said IC;

said first and second high side MOSFETs comprising intelligent power switches having output terminals communicating signals related to at least one of a switch current and to a MOSFET die temperature;

said output terminals of at least one of intelligent power switch communicating an output signal for said at least said control IC to shut down said H-bridge when one of the switch current and the MOSFET die temperature exceed a threshold value.

2. An H-bridge driver for driving an electrical load;

said H-bridge driver comprising first and second high side MOSFETs and first and second low side MOSFETs;

each of said MOSFETs having respective drain, source and control electrodes;

the drain electrodes of said high side MOSFETs and the source electrodes of said low side MOSFETs connected to power input terminals;

the source electrodes of said first and second high side MOSFETs connected to the drain electrodes of said first and second low side MOSFETs respectively at first and second nodes which define output bridge terminals;

a control IC for controlling the operation of said high side and low side MOSFETs;

said control IC having input terminals connectable to receive input control signals from an exterior bridge control circuit and having output terminals connected to said control electrodes of said high side MOSFETs;

a support for supporting said first and second high side MOSFETs and said control IC; and

a common insulation housing enclosing said first and second high side MOSFETs and said control IC; and

connection pins extending from said housing;

said connection pins including N1 and N2 pins coupled to the respective control electrodes of said first and second high side MOSFETs, a V_cc pin and a GND pin connected to said power input terminals, and M1 and M2 pins connected to said first and second nodes respectively.

3. The device of claim 2, wherein said low side MOSFETs are normally ON.

4. The device of claim 3, which further includes a shoot-thru prevention circuit in said control IC for turning on said first or second low side in response to the turn off of said first or second high side MOSFET respectively, when said first or second high side MOSFET output reaches a given low voltage value compared to its full output voltage.

5. The device of claim 2, wherein said control IC includes a PWM generator for applying a soft start PWM signal to said control electrodes of said low side MOSFETs.

6. An H-bridge driver for driving an electrical load;

said H-bridge driver comprising first and second high side MOSFETs and first and second low side MOSFETs;

each of said MOSFETs having respective drain, source and control electrodes;

the drain K electrodes of said high side MOSFETs and the source electrodes of said low side MOSFETs connected to power input terminals;

the source electrodes of said first and second high side MOSFETs connected to the drain electrodes of said first and second low side MOSFETs respectively at first and second nodes which define output bridge terminals;

a control IC for controlling the operation of said high side and low side MOSFETs;

said control IC having input terminals connectable to receive input control signals from an exterior bridge control circuit and having output terminals connected to said control electrodes of said high side MOSFETs;

a support for supporting said first and second high side MOSFETs and said control IC; and

a common insulation housing enclosing said first and second high side MOSFETs and said control IC;

said low side MOSFETs both being normally ON.

7. The device of claim 6, which further includes a shoot-thru prevention circuit in said control IC for turning on said first or second low side device in response to the turn off of said first or second high side MOSFET respectively, and when said first or second high side MOSFET output reaches a given low voltage value compared to its full output voltage.

8. An H-bridge driver for driving an electrical load;

said H-bridge driver comprising first and second high side MOSFETs and first and second low side MOSFETs;

each of said MOSFETs having respective drain, source and control electrodes;

the drain electrodes of said high side MOSFETs and the source electrodes of said low side MOSFETs connected to power input terminals;

the source electrodes of said first and second high side MOSFETs connected to the drain electrodes of said first and second low side MOSFETs respectively at first and second nodes which define output bridge terminals;

a control IC for controlling the operation of said high side and low side MOSFETs;

said control IC having input terminals connectable to receive input control signals from an exterior bridge control circuit and having output terminals connected to said control electrodes of said high side MOSFETs;

a support for supporting said first and second high side MOSFETs and said control IC; and

a common insulation housing enclosing said first and second high side MOSFETs and said control IC;

said IC including a PWM generator for applying a soft start PWM signal to said control electrodes of said low side MOSFETs.

9. The device of claim 8, wherein said low side MOSFETs are normally ON.

10. The device of claim 9, which further includes a shoot-thru prevention circuit in said control IC for turning on said first or second low side device in response to the turn off of said first or second high side MOSFET respectively, when said first or second high side MOSFET output reaches a given low voltage value compared to its full output voltage.

11. The H-bridge driver of claim 10, wherein said first and second high side MOSFETs are intelligent power switches and have output terminals with signals related to a switch current and to a MOSFET die temperature;

said output terminals coupled to said control IC producing an output signal to said control IC for shut down of said H-bridge when either current or die temperature exceed a given value.

12. The H-bridge driver of claim 11, wherein said first and second high side MOSFETs are intelligent power switches and have output terminals with signals related to the switch current and to the MOSFET die temperature;

said output terminals coupled to said control IC producing an output signal to said microcontroller for shut down of said H-bridge when either current or die temperature exceed a given value;

said connection pins including a DG pin connected to said output signal produced by said control IC responsive to excessive die temperature or current.

13. The H-bridge driver of claim 9, which further includes an external RC circuit connected to said control IC for controlling the duty cycle of said soft start circuit.

14. The device of claim 8, wherein said low side MOSFETs are normally ON.

15. The H-bridge driver of claim 8, which further includes an external RC circuit connected to said control IC for controlling the duty cycle of said soft start circuit;

said RC circuit including a resistor and capacitor.

16. The H-bridge driver of claim 15, wherein said connection pins include a V_RC pin connected to one end of the resistor of said RC circuit, an SS pin connected to the node between the resistor and capacitor of said RC circuit and a GND pin connected to one end of the capacitor of said RC circuit.

17. The H-bridge driver of claim 15, wherein said connection pins include IN1 and IN2 pins coupled to the respective control electrodes of said first and second high side MOSFETs, a V_cc pin and a GND pin connected to said power input terminals, and an M1 and M2 pins connected to said first and second nodes respectively.

18. The H-bridge driver of claim 17, wherein said connection pins include a V_RC pin connected to one end of the resistor of said RC circuit, an SS pin connected to the node between the resistor and capacitor of said RC circuit and a GND pin connected to one end of the capacitor of said RC circuit.