×

Semiconductor non-volatile memory device having an improved write speed

  • US 6,750,102 B1
  • Filed: 10/12/2000
  • Issued: 06/15/2004
  • Est. Priority Date: 05/20/1998
  • Status: Expired due to Term
First Claim
Patent Images

1. A method for making a non-volatile semiconductor device comprising:

  • forming a multilayer gate dielectric having a charge storage layer and being dielectrically equivalent to a layer of silicon dioxide having a thickness that is less than 200 angstroms;

    forming a control gate comprising polycrystalline silicon of a first conductivity type on said gate dielectric; and

    forming source and drain regions separated by a channel region in a semiconductor substrate, said source and drain regions having a second conductivity type different from said first conductivity type.

View all claims
  • 5 Assignments
Timeline View
Assignment View
    ×
    ×