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Methods for sputter deposition of high-k dielectric films

  • US 6,750,126 B1
  • Filed: 01/08/2003
  • Issued: 06/15/2004
  • Est. Priority Date: 01/08/2003
  • Status: Active Grant
First Claim
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1. A method of fabricating a transistor gate structure, comprising:

  • performing a sputter deposition process to form a high-k dielectric layer over a semiconductor body in a wafer, the high-k dielectric layer comprising a high-k oxide, an oxynitride, or a nitride;

    minimizing bombardment of the semiconductor body by positively charged reactive ions during the sputter deposition process;

    forming a gate electrode layer over the high-k dielectric layer; and

    patterning the gate electrode layer and the high-k dielectric layer.

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