Power semiconductor switching element provided with buried electrode
First Claim
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1. A semiconductor element comprising:
- a semiconductor substrate of a first conductivity type having a first major surface and a second major surface opposing the first major surface;
a drift layer of the first conductivity type formed on the first major surface of said semiconductor substrate;
a well layer of a second conductivity type selectively formed in a surface of said drift layer;
a source layer of the first conductivity type selectively formed in a surface of said well layer;
a trench formed to reach at least an inside of said drift layer from a surface of said source layer through said well layer;
a buried electrode having a first portion and a second portion being continuous to the first portion, the first portion being formed through a first insulating film in a region extending from the trench of said drift layer to a bottom surface of said trench, the second portion being led out from the first portion to an outside of a terminal portion;
a control electrode formed in a region extending from said source layer to said drift layer through said well layer in said trench to be insulated from said buried electrode through a second insulating film;
a first main electrode formed on the second major surface of said semiconductor substrate; and
a second main electrode connected to said source layer and said well layer.
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Abstract
A semiconductor element of this invention includes a drift layer of a first conductivity type formed on a semiconductor substrate of the first conductivity type, a well layer of a second conductivity type selectively formed in the surface of the drift layer, a source layer of the first conductivity type selectively formed in the surface of the well layer, a trench formed to reach at least the inside of the drift layer from the surface of the source layer through the well layer, a buried electrode formed in the trench through a first insulating film, and a control electrode formed on the drift layer, the well layer, and the source layer through a second insulating film.
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11 Claims
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1. A semiconductor element comprising:
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a semiconductor substrate of a first conductivity type having a first major surface and a second major surface opposing the first major surface;
a drift layer of the first conductivity type formed on the first major surface of said semiconductor substrate;
a well layer of a second conductivity type selectively formed in a surface of said drift layer;
a source layer of the first conductivity type selectively formed in a surface of said well layer;
a trench formed to reach at least an inside of said drift layer from a surface of said source layer through said well layer;
a buried electrode having a first portion and a second portion being continuous to the first portion, the first portion being formed through a first insulating film in a region extending from the trench of said drift layer to a bottom surface of said trench, the second portion being led out from the first portion to an outside of a terminal portion;
a control electrode formed in a region extending from said source layer to said drift layer through said well layer in said trench to be insulated from said buried electrode through a second insulating film;
a first main electrode formed on the second major surface of said semiconductor substrate; and
a second main electrode connected to said source layer and said well layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A semiconductor element comprising:
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a semiconductor substrate of a first conductivity type having a first major surface and a second major surface opposing the first major surface;
a drift layer of the first conductivity type formed on the first major surface of said semiconductor substrate;
a well layer of a second conductivity type selectively formed in a surface of said drift layer;
a source layer of the first conductivity type selectively formed in a surface of said well layer;
a trench formed to reach at least an inside of said drift layer from a surface of said source layer through said well layer, the trench having one of a circular horizontal cross section, a square horizontal cross section and a regular hexagonal horizontal cross section;
a buried electrode formed through a first insulating film in a region extending from the trench of said drift layer to a bottom surface of said trench;
a control electrode formed in a region extending from said source layer to said drift layer through said well layer in said trench to be insulated from said buried electrode through a second insulating film;
a first main electrode formed on the second major surface of said semiconductor substrate; and
a second main electrode connected to said source layer and said well layer, wherein said first insulating film has a thickness which increases gradually toward said semiconductor substrate.
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Specification