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Metallization system for use in a semiconductor component

  • US 6,750,544 B1
  • Filed: 07/31/2002
  • Issued: 06/15/2004
  • Est. Priority Date: 07/31/2002
  • Status: Expired due to Fees
First Claim
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1. A metallization system suitable for use in a semiconductor component, comprising:

  • a substrate having a major surface;

    a conductor disposed on a first portion of the major surface;

    a first dielectric material having a first dielectric constant and a first dielectric surface disposed on a second portion of the major surface, the second portion adjacent the first portion;

    a second dielectric material having a second dielectric constant and a second dielectric surface disposed on the conductor and a third portion of the major surface, the third portion between the first and second portions; and

    a conductive material extending through the second dielectric material and electrically coupled to the conductor.

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