Metallization system for use in a semiconductor component

• US 6,750,544 B1
• Filed: 07/31/2002
• Issued: 06/15/2004
• Est. Priority Date: 07/31/2002
• Status: Expired due to Fees

• Current Assignee: Advanced Micro Devices, Inc.
• Original Assignee: Advanced Micro Devices SDN Berhad (Advanced Micro Devices, Inc.)
• Inventors: Spano, John D., Nistler, John Lee
• Primary Examiner(s): Flynn, Nathan J.
• Assistant Examiner(s): GREENE, PERSHELLE L
• Application Number:
  US10/208,984
• Time in Patent Office: 685 Days
• Field of Search: 257/758, 257/760, 257/774, 257/750, 257/773
• US Class Current: 257/758
• CPC Class Codes: H01L 23/5222 Capacitive arrangements or effects of, or between wiring layers other capacitive arrangements H01L23/642
• CPC Class Codes: H01L 23/5329 Insulating materials
• CPC Class Codes: H01L 23/53295 Stacked insulating layers
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A metallization system (10) suitable for use in a semiconductor component and a method for fabricating the metallization system (10). The metallization system (10) includes a dielectric material (20) disposed on a major surface (14) of a substrate (12). The dielectric material (20) contains a dielectric filled plug (26) over a conductor (19). A metal filled plug (38) extends through the dielectric filled plug (26). The metal of the metal filled plug (38) electrically contacts the conductor (19). The metallization system (10) may be fabricated by etching a via (24) in the dielectric material (20) and filling the via (24) with a dielectric material (26) having a dielectric constant that is greater than the dielectric constant of the dielectric material (20) disposed on the major surface. A via (34) is formed in the dielectric material (26) that fills the via (24) and the via (34) is filled with a metal.

Claims

1. A metallization system suitable for use in a semiconductor component, comprising:

a substrate having a major surface;

a conductor disposed on a first portion of the major surface;

a first dielectric material having a first dielectric constant and a first dielectric surface disposed on a second portion of the major surface, the second portion adjacent the first portion;

a second dielectric material having a second dielectric constant and a second dielectric surface disposed on the conductor and a third portion of the major surface, the third portion between the first and second portions; and

a conductive material extending through the second dielectric material and electrically coupled to the conductor.

2. The metallization system of claim 1, further including a dielectric layer disposed on the first dielectric surface and the second dielectric surface.

3. The metallization system of claim 2, further including a second conductor, the second conductor disposed on the dielectric layer and electrically coupled to the conductive material.

4. The metallization system of claim 1, wherein the value of the first dielectric constant is greater than the value of the second dielectric constant.

5. The metallization system of claim 4, wherein the dielectric constant of the first dielectric material is less than about 3.9 and the dielectric constant of the second dielectric material is less than about 3.9.

6. The metallization system of claim 1, wherein the first dielectric material is selected from the group of dielectric materials consisting of bis-benzocyclobutene (BCB), polyfluorotetraethylene, fluorinated tetraethoxysilane, methyl silsesquioxane, and hydrogen silsesquioxane.

7. The metallization system of claim 1, wherein the second dielectric material is selected from the group of dielectric materials consisting of silicon oxide, fluorinated tetraethoxysilane, borophosphotetraethylorthosilicate glass, borophosphosilicate glass, and silicon nitride.

8. The metallization system of claim 1, wherein the first dielectric material has a thickness ranging from 1,000 Å

to 15,000 Å

.