Device for manufacturing semiconductor device and method of manufacturing the same

• US 6,750,976 B2
• Filed: 05/20/2002
• Issued: 06/15/2004
• Est. Priority Date: 12/28/1998
• Status: Expired due to Term

• Current Assignee: Pannova Semic, LLC (Vector Capital Corporation)
• Original Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Inventors: Eriguchi, Koji
• Primary Examiner(s): Rosenberger, Richard A.
• Application Number:
  US10/147,809
• Publication Number:
  US 20020135785A1
• Time in Patent Office: 757 Days
• Field of Search: 356/630, 356/632, 356/432, 356/445
• US Class Current: 356/630
• CPC Class Codes: G01B 11/0625 with measurement of absorption or reflection
• CPC Class Codes: G03F 7/70483 Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
• CPC Class Codes: H01L 21/67167 surrounding a central transfer chamber
• CPC Class Codes: H01L 21/67253 Process monitoring, e.g. flow or thickness monitoring
• CPC Class Codes: H01L 22/20 Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
• CPC Class Codes: Y10S 414/139 including wafer charging or discharging means for vacuum chamber

Abstract

There is provided a clustered device for manufacturing a semiconductor device in which a cleaning chamber, a rapid thermal processing chamber, an optical measurement chamber, and the like are arranged around a load-lock room. In an optical measurement system, there are disposed an exciting light source, a measuring light source, a light detector, a control/analyze system, and the like. During the formation of an oxide film, for example, a wafer is cleaned in the cleaning chamber and then the amount of a natural oxide film remaining on the wafer or the like is measured by optical modulation reflectance spectroscopy in the optical measurement chamber. Thereafter, the wafer is oxidized in the rapid thermal processing chamber. As a result, the surface of the wafer is prevented from being oxidized on exposure to an atmosphere and the surface state of the wafer can be monitored in the course of sequential process steps. By measuring the thickness of a film on a semiconductor region by optical evaluation in the clustered manufacturing device, the manufacturing process using the clustered device can be controlled.

Claims

1. A method of manufacturing a semiconductor device by using a clustered device for manufacturing the semiconductor device, comprising a plurality of processing rooms, a shared container enclosing a space containing the plurality of processing rooms such that the space is held in an atmosphere disconnected from an external space, and transporting means for transporting the wafer within the shared container, the method comprising the steps of:

(a) forming a film on the wafer or removing a film from a surface of the wafer in one of the plurality of processing rooms; and

(b) determining the thickness of the film by optically evaluating a surface state of the wafer at any site in the shared container;

wherein the step (b) includes the substeps of;

(x) irradiating a semiconductor region of the wafer with measuring light;

(y) intermittently irradiating the semiconductor region of the wafer with exciting light; and

(z) calculating a change of reflectance by dividing the difference between the reflectances of the measuring light when the semiconductor region of the wafer is irradiated and not irradiated with the exciting light by the reflectance of the measuring light when the semiconductor region is not irradiated with the exciting light, wherein

the thickness of the film is determined based on the change rate of reflectance.

2. The method of manufacturing a semiconductor device according to claim 1, wherein

the step (a) includes removing a natural oxide film from a surface of the wafer and

the step (b) includes determining the thickness of the natural oxide film.

3. The method of manufacturing a semiconductor device according to claim 1, wherein

the step (a) includes forming a gate insulating film on the wafer and

the step (b) includes determining the thickness of the gate insulating film.

4. The method of manufacturing a semiconductor device according to claim 3, wherein

the step (a) further includes forming, on the gate insulating film, a conductor film for a gate electrode,

the method further comprising, after the step (b), the step of

(c) controlling the thickness of the gate insulating film based on the change rate of reflectance calculated in the step (b) prior to the formation of the conductor film for a gate electrode.

5. The method of manufacturing a semiconductor device according to claim 1, wherein the step (b) includes

measuring the change rate of reflectance in each of the p-type semiconductor region and the n-type semiconductor region and determining the thickness of a natural oxide film based on the dependent property of the p-type semiconductor region or the n-type semiconductor region providing the higher change rate of reflectance.

6. The method of manufacturing a semiconductor device according to claim 1, wherein the thickness of the film is 2 nm or less.