Inspection system and inspection process for wafer with circuit using charged-particle beam
First Claim
1. A process for inspecting a wafer with a circuit using a charged-particle beam, comprising the steps of:
- applying a primary charged-particle beam from a source of charged particles to the wafer to scan it with the beam;
applying an optical beam to the wafer before or during said a primary charged-particle beam is being applied on the wafer;
detecting secondary charged particles from the wafer, and inspecting the continuity and discontinuity of the circuit based on changes of contrasts of detected signals.
1 Assignment
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Accused Products
Abstract
In a method for inspecting positions and types of defects on wafers with circuit patterns in a semiconductor manufacturing process, inspection is made regardless of the types and materials of junctions of circuit patterns of the semiconductor devices, different kinds of defects being distinguished from one another. Further, electrification of the circuit pattern is prevented, and the area to be exposed to an electron beam is controlled evenly and at a desired voltage. During inspection of the positions and types of defects on a wafer using a charged-particle beam from a charged-particle source, an optical beam from an optical source as well as a charged-particle beam are applied to a junction of the circuit pattern of the wafer placed on a wafer holder. Thus, regardless of the types and materials of circuit patterns, a highly sensitive inspection is made according to contrasts in the defects of a captured image.
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Citations
21 Claims
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1. A process for inspecting a wafer with a circuit using a charged-particle beam, comprising the steps of:
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applying a primary charged-particle beam from a source of charged particles to the wafer to scan it with the beam;
applying an optical beam to the wafer before or during said a primary charged-particle beam is being applied on the wafer;
detecting secondary charged particles from the wafer, and inspecting the continuity and discontinuity of the circuit based on changes of contrasts of detected signals. - View Dependent Claims (3, 4, 5)
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2. A process for inspecting a wafer with a circuit using a charged-particle beam, comprising the steps of:
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electrifying the wafer in advance with a primary charged-particle beam from a first source of charged particles;
applying a primary charged-particle beam from a second source of charged particles to the wafer to scan it with the beam;
applying an optical beam to the wafer before or during said a primary charged-particle beam is being applied on the wafer;
detecting secondary charged particles from the wafer, and inspecting the continuity and discontinuity of the circuit based on changes of contrasts of detected signals. - View Dependent Claims (19, 20, 21)
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6. A process for inspecting a wafer with a circuit using a charged-particle beam, comprising the steps of:
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applying a primary charged-particle beam from a source of charged particles to the wafer to scan it with the beam, patterns of the circuit being formed by insulators;
applying an optical beam to the wafer before or during said a primary charged-particle beam is being applied on the wafer;
detecting secondary charged particles from the wafer;
turning the surfaces of the insulators conductive selectively in accordance with the materials of the insulators, and inspecting the continuity and discontinuity of the circuit based on changes of contrasts of signals detected from the secondary charged particles. - View Dependent Claims (7, 8)
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9. A system for inspecting a wafer with a circuit using a charged-particle beam, comprising:
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a wafer holder on which the wafer is placed;
a source of charged particles;
a deflector to deflect a primary charged-particle beam from the source of charged particles to scan the wafer with the beam;
an objective lens for applying the primary charged-particle beam to the wafer;
an optical source for applying an optical beam to the wafer, and an inspection unit for applying the optical beam from the optical source to the wafer before or during said a primary charged-particle beam is being applied on the wafer, detecting secondary charged particles from the wafer, recording a secondary charged-particles image, and inspecting the continuity and discontinuity of the circuit based on contrasts of the recorded image. - View Dependent Claims (10, 11, 12)
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13. A process for inspecting a wafer with a circuit using a charged-particle beam, comprising the step of:
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applying a primary charged-particle beam from a source of charged particles to the wafer to scan it with the beam, circuit patterns of the circuit being electrically insulated from the back surface of the wafer;
applying an optical beam to the front surface of the wafer to stabilize the electric potential of the front surface before or during said a primary charged-particle beam is being applied on the wafer; and
inspecting the wafer for defective circuit patterns based on signals from secondary charged particles from the wafer. - View Dependent Claims (14, 15)
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16. A process for inspecting a wafer with a circuit using a charged-particle beam, comprising the steps of:
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applying a primary charged-particle beam from a source of charged particles to the wafer to scan it with the beam, circuit patterns of the circuit being electrically insulated from the back surface of the wafer;
applying an optical beam to surfaces of members forming the circuit patterns to electrify the front surface of the wafer positively before or during said a primary charged-particle beam is being applied on the wafer, and inspecting the wafer for defective circuit patterns based on signals from secondary charged particles from the wafer. - View Dependent Claims (17, 18)
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Specification