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Internal high voltage generation circuit capable of stably generating internal high voltage and circuit element therefor

  • US 6,753,720 B2
  • Filed: 11/25/2002
  • Issued: 06/22/2004
  • Est. Priority Date: 04/02/1998
  • Status: Expired due to Fees
First Claim
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1. A semiconductor circuit device comprising:

  • an internal voltage generation circuit for generating an internal voltage of a prescribed level, and an internal voltage level detection circuit for detecting a voltage level of said internal voltage, said internal voltage level detection circuit including;

    a first conductivity type first insulated gate field effect transistor connected between a first power supply node and a first node and receiving a voltage corresponding to said internal voltage on a gate thereof, a first conductivity type second insulated gate field effect transistor connected between said first node and a second node and receiving a reference voltage on a gate thereof, a first conductivity type third insulated gate field effect transistor connected between said first node and a third node and receiving the voltage of said first node on a gate thereof, and a current stage connected between the second and third nodes and a second power supply node and feeding a current between said second and third nodes and said second power supply node.

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