Internal high voltage generation circuit capable of stably generating internal high voltage and circuit element therefor

• US 6,753,720 B2
• Filed: 11/25/2002
• Issued: 06/22/2004
• Est. Priority Date: 04/02/1998
• Status: Expired due to Fees

• Current Assignee: Renesas Technology Corporation (Renesas Electronics Corporation)
• Original Assignee: Renesas Technology Corporation (Renesas Electronics Corporation)
• Inventors: Furutani, Kiyohiro, Kono, Takashi, Mitsui, Katsuyoshi
• Primary Examiner(s): Lam, Tuan T.
• Assistant Examiner(s): Nguyen, Hiep
• Application Number:
  US10/302,849
• Publication Number:
  US 20030071679A1
• Time in Patent Office: 575 Days
• Field of Search: 327/198, 327/538, 327/540, 327/541, 327/542, 327/543, 327/530, 327/535, 323/313, 323/314, 323/316, 323/317
• US Class Current: 327/538
• CPC Class Codes: G05F 1/465 Internal voltage generators for integrated circuits, e.g. step down generators
• CPC Class Codes: G11C 5/143 Detection of memory cassette insertion or removal; Continuity checks of supply or ground lines; Detection of supply variations, interruptions or levels G11C5/148 takes precedence; Switching between alternative supplies G11C5/141 takes precedence
• CPC Class Codes: G11C 5/145 Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor G11C5/141 takes precedence

Abstract

In order to stably generate a high voltage of a prescribed level, a Vpp detection circuit which is activated in response to an activation signal for comparing the high voltage with a reference voltage is forcibly brought into an active state for a prescribed period under control of an initial control circuit.

Claims

1. A semiconductor circuit device comprising:

an internal voltage generation circuit for generating an internal voltage of a prescribed level, and

an internal voltage level detection circuit for detecting a voltage level of said internal voltage,

said internal voltage level detection circuit including;

a first conductivity type first insulated gate field effect transistor connected between a first power supply node and a first node and receiving a voltage corresponding to said internal voltage on a gate thereof,

a first conductivity type second insulated gate field effect transistor connected between said first node and a second node and receiving a reference voltage on a gate thereof,

a first conductivity type third insulated gate field effect transistor connected between said first node and a third node and receiving the voltage of said first node on a gate thereof, and

a current stage connected between the second and third nodes and a second power supply node and feeding a current between said second and third nodes and said second power supply node.

2. The semiconductor circuit device in accordance with claim 1, wherein said current stage includes:

a first conductivity type fourth insulated gate field effect transistor connected between said second node and said second power supply node with a gate thereof connected to said third node, and

a first conductivity type fifth insulated gate field effect transistor connected between said third node and said second power supply node with a gate thereof connected to said third node.

3. The semiconductor circuit device in accordance with claim 1, further comprising a capacitive element connected between said first power supply node and said gate of the second insulated gate field effect transistor.

4. The semiconductor circuit device in accordance with claim 1, wherein said first power supply node receives an externally applied power supply voltage being different from said internal voltage.

5. The semiconductor circuit device in accordance with claim 1, wherein said internal voltage is supplied to said first power supply node and said gate of the first insulated gate field effect transistor.

6. The semiconductor circuit device in accordance with claim 1, wherein said internal voltage level detection circuit further comprises voltage dividing means for resistance-dividing said internal voltage and supplying the resistance-divided internal voltage to said gate of the first insulated gate field effect transistor.

7. The semiconductor circuit device in accordance with claim 1, wherein the first and second power supply nodes receive voltages being different in voltage polarity from each other.

8. The semiconductor circuit device in accordance with claim 1, wherein said internal voltage level detection circuit further comprises trimming means for adjusting channel resistance values of the first, second and third insulated gate field effect transistors.

9. The semiconductor circuit device in accordance with claim 1, further comprising differential amplification means differentially amplifying the voltages of the second and third nodes and outputting a signal indicating whether said internal voltage reaches said prescribed voltage level.