Digital to analog converter including a ferroelectric non-volatile semiconductor memory, and method for converting digital data to analog data
First Claim
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1. A digital to analog converter comprising a ferroelectric non-volatile semiconductor memory, whereinsaid ferroelectric non-volatile semiconductor memory comprises:
- (A) a data line; and
(B) N (where N≧
2) memory units;
each of said memory units comprises;
(B-1) a selection transistor;
(B-2) a memory cell comprising a first electrode, a ferroelectric layer and a second electrode; and
(B-3) a plate line;
said first electrode is connected to said data line via said selection transistor, said second electrode is connected to said plate line, and the area of said ferroelectric layer of each of said memory cells varies among said memory cells.
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Abstract
A D/A converter capable of temporally controlling output of analog data during D/A conversion is provided. The digital to analog converter includes a ferroelectric non-volatile semiconductor memory. The ferroelectric non-volatile semiconductor memory includes a data line, a memory unit which has M memory cells, and M plate lines. Each of the memory cells includes a first electrode, a ferroelectric layer and a second electrode. The first electrode of the memory cells is shared in the memory unit and is connected to the data line. The second electrode of the mth memory cell is connected to the mth plate line. And the area of the ferroelectric layer of the memory cells varies among the memory cells.
20 Citations
66 Claims
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1. A digital to analog converter comprising a ferroelectric non-volatile semiconductor memory, wherein
said ferroelectric non-volatile semiconductor memory comprises: -
(A) a data line; and
(B) N (where N≧
2) memory units;
each of said memory units comprises;
(B-1) a selection transistor;
(B-2) a memory cell comprising a first electrode, a ferroelectric layer and a second electrode; and
(B-3) a plate line;
said first electrode is connected to said data line via said selection transistor, said second electrode is connected to said plate line, and the area of said ferroelectric layer of each of said memory cells varies among said memory cells. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A digital to analog converter comprising a ferroelectric non-volatile semiconductor memory, wherein
said ferroelectric non-volatile semiconductor memory comprises: -
(A) a data line;
(B) a memory unit comprising M (where M≧
2) memory cells; and
(C) M plate lines;
each of said memory cells comprises a first electrode, a ferroelectric layer and a second electrode, said first electrode of said memory cells is shared in said memory unit, said shared first electrode is connected to said data line, said second electrode of the mth (where m=1, 2, . . . M) of said memory cells in said memory unit is connected to the mth of said plate lines, and the area of said ferroelectric layer of each of said memory cells varies among the memory cells. - View Dependent Claims (8, 9, 10, 11, 12)
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13. A digital to analog converter comprising a ferroelectric non-volatile semiconductor memory, wherein
said ferroelectric non-volatile semiconductor memory comprises: -
(A) a data line;
(B) N (where N≧
2) memory units each comprising M (where M≧
2) memory cells; and
(C) M×
N plate lines;
said N memory units are layered with an insulation layer in between each, each of said memory cells comprises a first electrode, a ferroelectric layer and a second electrode, said first electrode of said memory cell is shared in each of said memory units, said shared first electrode is connected to said data line, said second electrode of the mth (where m=1, 2, . . . M) of said memory cells in said memory unit of the nth (where n=1, 2, . . . N) layer is connected to the [(n−
1)M+m]th of said plate lines, andthe area of said ferroelectric material layer of each of said memory cells varies among said memory cells. - View Dependent Claims (14, 15, 16, 17, 18)
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19. A digital to analog converter comprising a ferroelectric non-volatile semiconductor memory, wherein
said ferroelectric non-volatile semiconductor memory comprises: -
(A) a data line;
(B) N (where N≧
2) selection transistors;
(C) N memory units each comprising M (where M≧
2) memory cells; and
(D) M plate lines;
each of said memory cells comprises a first electrode, a ferroelectric layer and a second electrode, said first electrode of said memory cells is shared in each of said memory units, said shared first electrode of the nth (where n=1, 2, . . . N) of said memory units is connected to said data line via the nth of said selection transistors, said second electrode of the mth (where m=1, 2, . . . M) of said memory cells in said nth memory unit is connected to the mth of said plate lines shared between said memory units, and the area of said ferroelectric layer of each of said memory cells in each of said memory units varies among said memory cells. - View Dependent Claims (20, 21, 22, 23, 24)
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25. A digital to analog converter comprising a ferroelectric non-volatile semiconductor memory, wherein
said ferroelectric non-volatile semiconductor memory comprises: -
(A) N (where N≧
2) data lines;
(B) N selection transistors;
(C) N memory units each comprising M (where M≧
2) memory cells; and
(D) M plate lines;
said N memory units are layered with an insulating layer in between each, each of said memory cells comprises a first electrode, a ferroelectric layer and a second electrode, said first electrode of each of said memory cells is shared in each of said memory units, said shared first electrode of said memory unit of an nth (where n=1, 2, . . . N) layer is connected to the nth of said data lines via the nth of said selection transistors, said second electrode of the mth (where m=1, 2, . . . M) of said memory cells in said memory unit of the nth layer is connected to the mth of said plate lines shared by said memory units, and the area of said ferroelectric layer of each of said memory cells in each of said memory units varies among said memory cells. - View Dependent Claims (26, 27, 28, 29, 30)
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31. A method for converting M bits of digital data to analog data using a digital to analog converter, wherein
said digital to analog converter includes a ferroelectric non-volatile semiconductor memory, said ferroelectric non-volatile semiconductor memory comprises: -
(A) a data line; and
(B) N (where N≧
2) memory units;
each of said memory units comprises;
(B-1) a selection transistor;
(B-2) a memory cell comprising a first electrode, a ferroelectric layer and a second electrode; and
(B-3) a plate line;
said first electrode is connected to said data line via said selection transistor, said second electrode is connected to said plate line, the area of said ferroelectric layer of each of said memory cells varies among said memory cells, and said method comprises;
setting said selection transistor to a conductive state, and driving said data line and said plate line to write a binary data of the mth bit (where m=1, 2, . . . M) in said memory cell of the mth of said memory units;
setting said selection transistor to a conductive state, and driving all of said plate lines to thereby simultaneously read out data from said memory cell in each of said memory unit; and
outputting the resultant electric potential generated across said data line. - View Dependent Claims (32, 33, 34, 35, 36)
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37. A method for converting M bits of digital data to analog data using a digital to analog converter, wherein
said digital to analog converter includes a ferroelectric non-volatile semiconductor memory, said ferroelectric non-volatile semiconductor memory comprises: -
(A) a data line;
(B) a memory unit comprising M (where M≧
2) memory cells; and
(C) M plate lines;
each of said memory cells comprises a first electrode, a ferroelectric layer and a second electrode, said first electrode of said memory cells is shared in said memory unit and is connected to said data line, said second electrode of the mth (where m=1, 2, . . . M) of said memory cells in said memory unit is connected to the mth of said plate lines, the area of said ferroelectric layer of each of said memory cells varies among the memory cells, and said method comprises;
driving said data line and said plate lines to write a binary data of the mth bit in said mth memory cell;
driving all of said plate lines to simultaneously read out data from all of said memory cells; and
outputting the resultant electric potential generated across said data line. - View Dependent Claims (38, 39, 40, 41, 42)
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43. A method for converting M×
- N bits of digital data to analog data using a digital to analog converter, wherein
said digital to analog converter includes a ferroelectric non-volatile semiconductor memory, said ferroelectric non-volatile semiconductor memory comprises;
(A) a data line;
(B) N (where N≧
2) memory units each comprising M (where M≧
2) memory cells; and
(C) M×
N plate lines;
said N memory units are layered with an insulation layer in between each, each of said memory cells comprises a first electrode, a ferroelectric layer and a second electrode, said first electrode of said memory cells is shared in each of said memory units and is connected to said data line, said second electrode of the mth (where m=1, 2, . . . M) of said memory cells in said memory unit of an nth (where, n=1, 2, . . . , N) layer is connected to the [(n−
1)M+m]th of said plate lines,the area of said ferroelectric layer of each of said memory cells varies among said memory cells, and said method comprises;
driving said data line and said plate lines to write a binary data of the [(n−
1)M+m]th bit in the [(n−
1)M+m]th of said memory cells;
activating all of said plate lines to simultaneously read out data from all of said memory cells; and
outputting the resultant electric potential generated across said data line. - View Dependent Claims (44, 45, 46, 47, 48)
- N bits of digital data to analog data using a digital to analog converter, wherein
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49. A method for converting M bits of digital data to analog data using a digital to analog converter, wherein
said digital to analog converter includes a ferroelectric non-volatile semiconductor memory, said ferroelectric non-volatile semiconductor memory comprises: -
(A) a data line;
(B) N (where N≧
2) selection transistors;
(C) N memory units each comprising M (where M≧
2) memory cells; and
(D) M plate lines;
each of said memory cells comprises a first electrode, a ferroelectric layer and a second electrode, said first electrode of said memory cells is shared in each of said memory units, said shared first electrode of the nth (where n=1, 2, . . . N) of said memory units is connected to said data line via the nth of said selection transistors, said second electrode of the mth (where m=1, 2, . . . M) of said memory cells in said nth memory unit is connected to the mth of said plate lines shared between said memory units, the area of said ferroelectric layer of each of said memory cells in each of said memory units varies among the memory cells, and said method comprises;
setting said nth selection transistor to a conductive state, and driving said data line and said plate lines to write a binary data of the mth bit in said mth memory cell in said nth memory unit;
setting said nth selection transistor to a conductive state, and activating all of said plate lines to simultaneously read out data from said memory cells in the nth of said memory units; and
outputting the resultant electric potential generated across said data line. - View Dependent Claims (50, 51, 52, 53, 54)
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55. A method for converting M×
- N bits of digital data to analog data using a digital to analog converter, wherein
said digital to analog converter includes a ferroelectric non-volatile semiconductor memory, said ferroelectric non-volatile semiconductor memory comprises;
(A) a data line;
(B) N (where N≧
2) selection transistors;
(C) N memory units each comprising M (where M≧
2) memory cells; and
(D) M plate lines;
each of said memory cells comprises a first electrode, a ferroelectric layer and a second electrode, said first electrode of said memory cells is shared in each of said memory units, said shared first electrode of the nth (where n=1, 2, . . . N) of said memory units is connected to said data line via the nth of said selection transistors, said second electrode of the mth (where m=1, 2, . . . M) of said memory cells in the nth of said memory units is connected to the mth of said plate lines shared by said memory units, the area of said ferroelectric layer of each of said memory cells in each of said memory units varies among the memory cells, and said method comprises;
setting said nth selection transistor to a conductive state, and driving said data line and said plate lines to write a binary data of the [(n−
1)M+m]th bit in said mth memory cell in said nth memory unit;
setting all of said selection transistors to a conductive state, and driving all of said plate lines to simultaneously read out data from all of said memory cells in said nth memory unit; and
outputting the resultant electric potential generated across said data line. - View Dependent Claims (56, 57, 58, 59, 60)
- N bits of digital data to analog data using a digital to analog converter, wherein
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61. A method for converting M bits of digital data to analog data using a digital to analog converter, wherein
said digital to analog converter includes a ferroelectric non-volatile semiconductor memory, said ferroelectric non-volatile semiconductor memory comprises: -
(A) N (where N≧
2) data lines;
(B) N selection transistors;
(C) N memory units each comprising M (where M≧
2) memory cells; and
(D) M plate lines;
said N memory units are layered with an insulation layer in between each, each of said memory cells comprises a first electrode, a ferroelectric layer and a second electrode, said first electrode of said memory cells is shared in each of said memory units, said shared first electrode of said memory unit of the nth (where n=1, 2, . . . N) layer is connected to the nth of said data lines via the nth of said selection transistors, said second electrode of the mth (where m=1, 2, . . . M) of said memory cells of said memory unit of the nth layer is connected to the mth of said plate lines shared by said memory units, the area of said ferroelectric material layer of each of said memory cells in each of said memory units varies among said memory cells, and said method comprises;
setting said nth selection transistor to a conductive state, and driving said nth data line and said plate lines to write a binary data of the mth bit in said mth memory cell in said memory unit of the nth layer;
setting said nth selection transistor to a conductive state, and driving all of said plate lines to simultaneously read out data from all of said memory cells in said memory unit of the nth layer; and
outputting the resultant electric potential generated across said nth data line. - View Dependent Claims (62, 63, 64, 65, 66)
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Specification
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Current AssigneeSony Corporation (Sony Group Corp.)
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Original AssigneeSony Corporation (Sony Group Corp.)
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InventorsTanaka, Masahiro, Nishihara, Toshiyuki, Tsuneda, Yukihisa
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Primary Examiner(s)Elms, Richard
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Assistant Examiner(s)Luu, Pho M.
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Application NumberUS10/283,313Publication NumberTime in Patent Office602 DaysField of Search365/145, 365/63, 365/51US Class Current365/145CPC Class CodesG11C 11/22 using ferroelectric elements
