Method for growing single-wall carbon nanotubes utilizing seed molecules
First Claim
Patent Images
1. A method for growing single-wall carbon nanotubes comprising:
- a) providing seed molecules comprising segments of single-wall carbon nanotubes;
b) contacting the ends of the single-wall carbon nanotubes of the segments with at least one catalytic metal;
c) activating the catalytic metal;
d) adding a gaseous source of carbon to the single-wall carbon nanotubes and the catalytic metal;
e) subjecting the single-wall carbon nanotubes, the catalytic metal and the gaseous source of carbon to conditions to grow to the single-wall carbon nanotubes;
f) growing the segments of the single-wall carbon nanotubes; and
g) recovering the grown single-wall carbon nanotubes.
1 Assignment
0 Petitions
Accused Products
Abstract
This invention relates generally to a method for growing single-wall carbon nanotube (SWNT) from seed molecules. The supported or unsupported SWNT seed materials can be combined with a suitable growth catalyst by opening SWNT molecule ends and depositing a metal atom cluster. In one embodiment, a suspension of seed particles containing attached catalysts is injected into an evaporation zone to provide an entrained reactive nanoparticle. A carbonaceous feedstock gas is then introduced into the nanoparticle stream under conditions to grow single-wall carbon nanotubes. Recovery of the product produced can be done by filtration, centrifugation and the like.
-
Citations
26 Claims
-
1. A method for growing single-wall carbon nanotubes comprising:
-
a) providing seed molecules comprising segments of single-wall carbon nanotubes;
b) contacting the ends of the single-wall carbon nanotubes of the segments with at least one catalytic metal;
c) activating the catalytic metal;
d) adding a gaseous source of carbon to the single-wall carbon nanotubes and the catalytic metal;
e) subjecting the single-wall carbon nanotubes, the catalytic metal and the gaseous source of carbon to conditions to grow to the single-wall carbon nanotubes;
f) growing the segments of the single-wall carbon nanotubes; and
g) recovering the grown single-wall carbon nanotubes. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26)
a) suspending or dissolving a catalyst precursor of the catalytic metal in a liquid;
b) suspending the seed molecules in the liquid; and
c) evaporating the liquid.
-
-
11. The method of claim 10 wherein the liquid comprises water.
-
12. The method of claim 10 wherein the catalyst precursor comprises a chemical selected from the group consisting of Fe(NO3)3, Ni(NO3)2, Co(NO3)2 and combinations thereof.
-
13. The method of claim 1 wherein the segments are derivatized with a moiety that binds to a catalytic metal.
-
14. The method of claim 1 wherein the segments are derivatized with a moiety that binds to a catalyst precursor comprises the catalytic metal.
-
15. The method of claim 14 wherein the catalyst precursor comprises a ligand-stabilized catalyst nanoparticle.
-
16. The method of claim 1 wherein the contacting step comprises heating the seed molecules and the catalytic metal in a gas stream to a temperature in a range between 250°
- C. and 500°
C. to form an entrained particle stream.
- C. and 500°
-
17. The method of claim 16 wherein the entrained particle stream is subjected to reduction conditions at a temperature in a range between 300°
- C. and 500°
C.
- C. and 500°
-
18. The method of claim 16 further comprising introducing of the entrained particle stream to a growth chamber.
-
19. The method of claim 1 wherein the gaseous source of carbon comprises a gas selected from the group consisting of carbon monoxide, hydrocarbon gases and combinations thereof.
-
20. The method of claim 1 wherein the growing step is at a temperature in the range between 500°
- C. and 1000°
C.
- C. and 1000°
-
21. The method of claim 1 wherein the growing step is at a total pressure of about one atmosphere.
-
22. The method of claim 21 wherein the partial pressure of the gaseous source of carbon is in a range between 1 and 100 Torr.
-
23. The method of claim 20 wherein a sweep gas is introduced into the growth chamber.
-
24. The method of claim 20 wherein the growth chamber temperature is maintained by a heating method selected from the group consisting of preheating the gaseous source of carbon, preheating a sweep gas, externally heating the growth chamber, applying localized heating in the growth chamber and combinations thereof.
-
25. The method of claim 24 wherein the heating is applied by a heat source selected from the group consisting of a laser, an induction coil and combinations thereof.
-
26. The method of claim 1 wherein the recovery step comprises a recovery method selected from the group consisting of filtration, centrifugation and combinations thereof.
Specification