Method for transferring a thin film comprising a step of generating inclusions

• US 6,756,286 B1
• Filed: 11/22/1999
• Issued: 06/29/2004
• Est. Priority Date: 12/30/1997
• Status: Expired due to Term

• Current Assignee: Commissariat a L'Energie Atomique (French Alternative Energies and Atomic Energy Commission)
• Original Assignee: Commissariat a L'Energie Atomique (French Alternative Energies and Atomic Energy Commission)
• Inventors: Aspar, Bernard, Bruel, Michel, Moriceau, Hubert, Maleville, Christophe
• Primary Examiner(s): Mulpuri, Savitri
• Application Number:
  US09/380,322
• Time in Patent Office: 1,681 Days
• Field of Search: 438/406, 438/458, 438/459, 438/977, 438/527, 438/528, 438/479, 438/481, 438/532, 438/489
• US Class Current: 438/459
• CPC Class Codes: H01L 21/26506 in group IV semiconductors
• CPC Class Codes: H01L 21/76254 with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
• CPC Class Codes: Y10S 438/977 Thinning or removal of substrate

Abstract

A process for transfer of at least one thin film of solid material delimited in an initial substrate. The process includes a step in which a layer of inclusions is formed in the initial substrate at a depth corresponding to the required thickness of the thin film. These inclusions are designed to form traps for gaseous compounds which subsequently are implanted. In a subsequent step gaseous compounds are implanted in a manner to convey the gaseous compounds into the layer of inclusions. The dose of implanted gaseous compounds is made sufficient to cause the formation of micro-cavities to form a fracture plane along which the thin film can be separated from the remainder of the substrate.

Claims

1. A process for forming a thin film of material from a substrate, comprising the steps of:

(a) forming a gaseous compound trap zone implantation of a layer of inclusions in the substrate at a depth corresponding to a required thickness of the thin film;

(b) treating the substrate so as to introduce into the layer of inclusions, a dose of gaseous compounds sufficient to cause formation of micro-cavities in a fracture plane along which the thin film can be separated from the remainder of the substrate, the introduction of gaseous compounds involving a step of implantation of said gaseous compounds; and

(c) separating and recovering the thin film from the substrate along the fracture plane wherein the substrate is placed in intimate contact with a support to which the thin film will bond after separation from the remainder of the substrate.

2. The process according to claim 1, wherein said gaseous compounds are implanted into said substrate at a mean depth of penetration corresponding to the depth of the layer of inclusions.

3. The process according to claim 1, wherein said gaseous compounds are implanted into said substrate at a mean depth of penetration close to the layer of inclusions, and including the step of heat treating said substrate following implantation of said gaseous compounds so as to cause migration of said gaseous compounds to the layer of inclusions.

4. The process according to claim 1, wherein the substrate is composed of a main part supporting a film structure in which the thin film is delimited.

5. The process according to claim 1, wherein the main part of the substrate is reusable.

6. The process according to claim 1, wherein the inclusions have a chemical affinity with the gaseous compounds.

7. The process according to claim 6, including the step of heat treating the substrate so as to increase trapping efficiency of the implanted elements.

8. The process according to claim 6, including the step of heat treating the substrate so as to modify morphology of the inclusions.

9. The process according to claim 1, wherein the gaseous compounds are implanted by bombardment of neutral compounds or ions.

10. The process according to claim 1, wherein the gaseous compounds are implanted by plasma assisted diffusion, thermal diffusion or plasma assisted diffusion combined with thermal diffusion and/or diffusion assisted by electrical polarization.

11. The process according to claim 1, and further comprising a heat treatment step for weakening the substrate at the layer of inclusions so as to facilitate separation between the thin film and the remainder of the substrate.

12. The process according to claim 1, wherein said intimate contact is achieved by bonding.

13. The process according to claim 11, wherein said heat treatment step comprises pulse heating.

14. The process according to claim 1, wherein said thin film is separated from the remainder of the substrate by mechanical stress.

15. The process according to claim 1, wherein the substrate comprises silicon.

16. The process according to claim 1, wherein the substrate comprises a III-V semiconducting material.

17. The process according to claim 1, wherein the substrate comprises a structure made of thin films.

18. The process according to claim 1, and including the step of at least partially treating the thin film before it is separated from the substrate, to form, on all or part of the film being transferred, an integrated circuit.

19. The process according to claim 1, and including the step of at least partially treating the thin film before it is separated from the substrate, to form, on all or part of the film being transferred, an optoelectronic component.