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Method for transferring a thin film comprising a step of generating inclusions

  • US 6,756,286 B1
  • Filed: 11/22/1999
  • Issued: 06/29/2004
  • Est. Priority Date: 12/30/1997
  • Status: Expired due to Term
First Claim
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1. A process for forming a thin film of material from a substrate, comprising the steps of:

  • (a) forming a gaseous compound trap zone implantation of a layer of inclusions in the substrate at a depth corresponding to a required thickness of the thin film;

    (b) treating the substrate so as to introduce into the layer of inclusions, a dose of gaseous compounds sufficient to cause formation of micro-cavities in a fracture plane along which the thin film can be separated from the remainder of the substrate, the introduction of gaseous compounds involving a step of implantation of said gaseous compounds; and

    (c) separating and recovering the thin film from the substrate along the fracture plane wherein the substrate is placed in intimate contact with a support to which the thin film will bond after separation from the remainder of the substrate.

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