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Low temperature processes for making electronic device structures

  • US 6,756,324 B1
  • Filed: 03/25/1997
  • Issued: 06/29/2004
  • Est. Priority Date: 03/25/1997
  • Status: Expired due to Term
First Claim
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1. A process for depositing layers of silicon nitride at low temperatures on a plastic substrate, said process comprising:

  • encapsulating said plastic substrate with an electrically-insulating protective coating;

    placing said plastic substrate in a plasma chemical vapor deposition reactor, reducing a pressure in said reactor to about 0.6 Torr. bringing said plastic substrate to a temperature of about 125°

    C., flowing a gas mixture comprising helium, nitrogen, ammonia and silane through said reactor, and creating a plasma within said reactor so as to disassociate said gas mixture and thereby deposit a layer of amorphous silicon nitride on said protective coating, wherein said creating a plasma comprises using radio frequency energy having power/area in a range of about 0.03 to about 0.1 Watts/cm2, and wherein said amorphous silicon nitride layer has a leakage current density of less than about 1×

    10

    3
    Amps/cm2 and a breakdown electric field of greater than about 5 MV/cm.

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