Hermetically sealed semiconductor power module and large scale module comprising the same
First Claim
1. A semiconductor power module eliminating use of bonding wires, comprising:
- (a) a uniform and circular ceramic substrate;
(b) a circular metallic plate bonded to a surface of said substrate;
(c) a cylindrical metallic flange serving as an electrode, a lower end of the metallic flange is hermetically bonded to a surface of said metallic plate at a boundary of said metallic plate;
(d) a disk-shaped ceramic housing for disposing a second electrode and for hermetically sealing an opening of said metallic flange; and
(e) at least one or more semiconductor chips mounted on and soldered to said metallic plate.
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Accused Products
Abstract
This is a semiconductor power module provided with: a ceramic substrate; a metallic plate bonded to a surface of this substrate; a cylindrical metallic flange which is hermetically bonded to a surface of substrate or the metallic plate; a ceramic housing for hermetically sealing an opening of the metallic flange; and at least one or more semiconductor chips soldered to the metallic plate. The metallic flange is made of metal with a low thermal expansion coefficient. A hermetically sealed container is created by welding the metallic flange, the ceramic substrate and the housing with silver brazing. Moreover, external collector, emitter and gate electrodes are bonded on the housing by using the silver brazing. The collector, emitter and gate conductive pillars are respectively connected to the external collector, emitter and gate electrodes with calking. Thus, this hermetically sealed container is strong in mechanical strength and high in explosion-proof durability and excellent in moisture resistance. And this semiconductor power module has a high TFT reliability and a high TCT reliability. Moreover, a power cycle durability is larger since the emitter pedals are pressure-contacted to the emitter electrode pads disposed on the semiconductor chip via the metallic hemispheres so as to implement a large conductive capacity.
23 Citations
10 Claims
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1. A semiconductor power module eliminating use of bonding wires, comprising:
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(a) a uniform and circular ceramic substrate;
(b) a circular metallic plate bonded to a surface of said substrate;
(c) a cylindrical metallic flange serving as an electrode, a lower end of the metallic flange is hermetically bonded to a surface of said metallic plate at a boundary of said metallic plate;
(d) a disk-shaped ceramic housing for disposing a second electrode and for hermetically sealing an opening of said metallic flange; and
(e) at least one or more semiconductor chips mounted on and soldered to said metallic plate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
a conductive pillar electrically connected to said conductive electrode pedal; and
a cap-shaped external electrode aligned to a through hole penetrating said ceramic housing, uprightly bonded on said ceramic housing configured such that said conductive pillar is tightly connected to said cap-shaped external electrode with calking.
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9. The semiconductor power module of claim 8, wherein said conductive electrode pedal is attached to a backbone having said conductive pillar.
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10. The semiconductor power module of claim 4, further comprising a plurality of metallic hemispheres sandwiched between said conductive electrode pedal and said semiconductor chip.
Specification