Synchronous flash memory command sequence

• US 6,757,211 B2
• Filed: 02/26/2003
• Issued: 06/29/2004
• Est. Priority Date: 08/30/2001
• Status: Active Grant

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Zitlaw, Cliff, Roohparvar, Frankie Fariborz
• Primary Examiner(s): Nguyen, Viet Q.
• Application Number:
  US10/375,768
• Publication Number:
  US 20030151970A1
• Time in Patent Office: 489 Days
• Field of Search: 365/230.06, 365/233, 365/193, 365/203, 365/189.01
• US Class Current: 365/230.06
• CPC Class Codes: G11C 16/06 Auxiliary circuits, e.g. for writing into memory
• CPC Class Codes: G11C 16/10 Programming or data input circuits
• CPC Class Codes: G11C 16/26 Sensing or reading circuits; Data output circuits
• CPC Class Codes: G11C 7/1078 Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
• CPC Class Codes: G11C 7/109 Control signal input circuits

Abstract

A computer system comprises a memory controller and a synchronous non-volatile memory device coupled to the memory controller via a main memory bus. The synchronous flash memory device, in one embodiment, has a command interface comprising a writer enable connection (WE#) to receive a write enable signal, a column address strobe connection (CAS#) to receive a column address strobe signal, a row address strobe connection (RAS#) to receive a row address strobe signal. A command operation is initiated in response to a sequence of ACTIVE/WRITE and/or ACTIVE/READ commands provided on the WE#, CAS# and RAS# connections.

Claims

1. A synchronous flash memory device comprising:

an array of non-volatile memory cells; and

a command register to store command data used to control flash memory operations, wherein the command register is coupled to receive the command data through memory address connections during an internal flash operating mode, wherein the internal flash operating mode is initiated using a predetermined sequence of ACTIVE, WRITE, and/or READ commands.

2. The synchronous flash memory device of claim 1 wherein the WRITE commands are defined as a low CAS# signal, a high RAS# signal, and a low WE# signal, and the ACTIVE commands are defined as RAS# low, CAS# high and WE# high.

3. The synchronous flash memory device of claim 2 wherein the ACTIVE, WRITE, and/or READ commands are accompanied by command information provided on address input connections.

4. The synchronous flash memory device of claim 1 wherein the ACTIVE, WRITE, and/or READ commands are accompanied by command information provided on address input connections.

5. The synchronous flash memory device of claim 1 further comprising a control circuit to perform a read operation following the initiation of the internal flash operating mode in response to an ACTIVE command and a READ command.

6. The synchronous flash memory device of claim 1 further comprising a control circuit to perform a program operation following the initiation of the internal flash operating mode in response to an ACTIVE command and a WRITE command.

7. A synchronous flash memory device comprising:

an array of non-volatile memory cells arranged in addressable blocks;

external address connections to receive externally provided address data;

a mode register to store mode data used to set a mode of the synchronous flash memory device; and

a command register to store command data used to control flash memory operations, wherein the command register is coupled to receive the command data through memory address connections during an internal flash operating mode, wherein the internal flash operating mode is initiated using a sequence comprising ACTIVE, WRITE, and/or READ commands.

8. The synchronous flash memory device of claim 7 wherein the WRITE command is defined as a low CAS# signal, a high RAS# signal, and a low WE# signal, and the ACTIVE command is defined as RAS# low, CAS# high and WE# high.

9. The synchronous flash memory device of claim 8 wherein the ACTIVE, WRITE, and/or READ commands initiating the internal flash operating mode are accompanied by command information provided on address input connections.

10. The synchronous flash memory device of claim 7 wherein the ACTIVE, WRITE, and/or READ commands initiating the internal flash operating mode are accompanied by command information provided on address input connections.

11. The synchronous flash memory device of claim 7 further comprising a control circuit to perform a read operation following the initiation of the internal flash operating mode in response to an ACTIVE command and a READ command.

12. The synchronous flash memory device of claim 7 further comprising a control circuit to perform a program operation following the initiation of the internal flash operating mode in response to an ACTIVE command and a WRITE command.

13. A synchronous flash memory device comprising:

an array of non-volatile memory cells; and

a control circuit to initiate a command operation in response to a predefined sequence of externally provided ACTIVE, WRITE, and/or READ commands.

14. The synchronous flash memory device of claim 13 wherein the ACTIVE, WRITE, and/or READ commands are accompanied by command information provided on address input connections.

15. A synchronous data system comprising:

a memory controller; and

a synchronous flash memory device coupled to the memory controller and comprising,

an array of non-volatile memory cells, and

a control circuit to initiate a command operation in response to a predefined sequence of externally provided ACTIVE, WRITE, and/or READ commands from the memory controller.

16. The synchronous data system of claim 15 wherein the command register is coupled to receive the command information through memory address connections coupled to the memory controller, the command information is loaded in response to the predefined sequence.

17. A method of loading commands in a synchronous flash memory, the method comprising:

initiating a command register load operation using a predefined combination of ACTIVE, WRITE, and/or READ commands, wherein the ACTIVE commands are defined as a high column address strobe (CAS#) signal, a low row address strobe (RAS#) signal, and a high write enable (WE#) signal , and the WRITE commands are defined as a low column address strobe (CAS#) signal, a high row address strobe (RAS#) signal, and a low write enable (WE#) signal; and

loading command information into the command register using address connections of the synchronous flash memory in response to the command register load operation.

18. The method of claim 17 further comprising:

placing command information on address input connections.

19. The method of claim 17 further comprising:

placing command information on address input connections.

20. The method of claim 17 further comprising:

performing a read operation following the initiation of the command register load operation utilizing an ACTIVE command and a READ command.

21. The method of claim 17 further comprising:

performing a program operation following the initiation of the command register load operation utilizing an ACTIVE command and a WRITE command.