Structure for nitride based laser diode with growth substrate removed
First Claim
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1. A structure for a nitride laser diode array comprising:
- a semiconductor membrane comprising at least two active layers, said semiconductor membrane having a first crystal plane;
a thermally conducting substrate having a second crystal plane, said thermally conducting substrate supporting said semiconductor membrane and being attached to said semiconductor membrane to enhance thermal coupling between said thermally conducting substrate and said plurality of active layers;
a metal layer disposed between said semiconductor membrane and said thermally conducting substrate, the metal layer having a thickness of less than approximately 10 micro meters; and
three or more electrodes to electrically bias said laser diode array, the three or more electrodes to allow individual addressing of each active layer in the plurality of active layers.
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Abstract
A structure for nitride laser diode arrays attached to a thermally conducting substrate is described where the sapphire growth substrate has been removed. The thermally conducting substrate is attached to the side opposite of the sapphire growth substrate.
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Citations
38 Claims
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1. A structure for a nitride laser diode array comprising:
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a semiconductor membrane comprising at least two active layers, said semiconductor membrane having a first crystal plane;
a thermally conducting substrate having a second crystal plane, said thermally conducting substrate supporting said semiconductor membrane and being attached to said semiconductor membrane to enhance thermal coupling between said thermally conducting substrate and said plurality of active layers;
a metal layer disposed between said semiconductor membrane and said thermally conducting substrate, the metal layer having a thickness of less than approximately 10 micro meters; and
three or more electrodes to electrically bias said laser diode array, the three or more electrodes to allow individual addressing of each active layer in the plurality of active layers. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23)
a first layer structure bonding the first surface of said semiconductor membrane to said thermally conducting substrate;
the first layer structure thermally coupling said plurality of active layers with said thermally conducting substrate;
the first layer structure including said metal layer; and
a second layer structure on the second surface of said semiconductor membrane;
one of the first and second layer structures including a common electrical contact for said plurality of active layers and the other of the first and second layer structures including a respective separate electrical contact for each of said plurality of active layers;
said semiconductor membrane having been formed by deposition of nitrides on an insulating substrate, one of the first and second surfaces of said semiconductor membrane having been formed by a process that includes removing the insulating substrate at an interface on said semiconductor membrane and then preparing the interface for a layer structure.
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24. A structure for a nitride laser diode array comprising:
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a semiconductor membrane comprising a plurality of active layers, wherein each active layer in the plurality of active layers has a common composition and thickness such that when subject to excitation, each active layer outputs light of a common predetermined wavelength;
said semiconductor membrane having a first crystal plane;
a thermally conducting substrate having a second crystal plane, said thermally conducting substrate supporting said semiconductor membrane and being attached to said semiconductor membrane to enhance thermal coupling between said thermally conducting substrate and said plurality of active layers;
a metal layer disposed between said semiconductor membrane and said thermally conducting substrate, the metal layer having a thickness of less than approximately 10 micrometers; and
a plurality of electrodes to electrically bias said laser diode array, the plurality of electrodes to allow individual addressing of each active layer in the plurality of active layers. - View Dependent Claims (25)
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26. A structure for a nitride laser diode array comprising:
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a semiconductor membrane comprising at least two regions in an active layer, each region electrically isolated from adjacent active regions, said semiconductor membrane having a first crystal plane;
a thermally conducting substrate having a second crystal plane, said thermally conducting substrate supporting said semiconductor membrane and being attached to said semiconductor membrane to enhance thermal coupling between said thermally conducting substrate and said plurality of active layers;
a metal layer disposed between said semiconductor membrane and said thermally conducting substrate, the metal layer having a thickness of less than approximately 10 micro meters; and
three or more electrodes to electrically bias said laser diode array, the three or more electrodes to allow individual addressing of each region in the active layer. - View Dependent Claims (27)
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28. A laser diode array comprising:
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a thermally conducting substrate;
a nitride semiconductor membrane supported on the substrate;
the membrane comprising first and second active regions in an active layer, the first and second active regions being electrically isolated from each other, the membrane having a first surface toward the substrate and a second surface away from the substrate;
a first layer structure bonding the first surface of the membrane to the substrate;
the first layer structure thermally coupling the first and second active regions with the substrate; and
a second layer structure on the second surface of the membrane;
one of the first and second layer structures including a common electrical contact for the first and second active regions and the other of the first and second layer structures including first and second separate electrical contacts for the first and second active regions, respectively;
the membrane having been formed on an insulating substrate, one of the first and second surfaces of the membrane having been formed by a process that includes removing the insulating substrate at an interface on the membrane and then preparing the interface for a layer structure. - View Dependent Claims (29, 30, 31, 32, 33, 34, 35, 36, 37, 38)
a mirror at a facet cleaved along the first crystal plane of the semiconductor membrane and the second crystal plane of the thermally conducting substrate.
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30. The laser diode array of claim 28 in which the thermally conducting substrate includes silicon, silicon carbide, diamond, or copper.
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31. The laser diode array of claim 28 in which the nitride semiconductor membrane comprises a nitride layer that has a multi-quantum well structure.
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32. The laser diode array of claim 28 in which the one of the first and second surfaces of the nitride semiconductor membrane has been formed by:
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melting a metal nitride layer at the interface to remove the insulating substrate at the interface on the membrane;
removing residual metal and damaged film at the interface to prepare the interface for a layer structure.
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33. The laser diode array of claim 32 in which the damaged film was removed by dry-etching, the one of the first and second surfaces having further been formed by:
ion sputtering to reduce surface damage caused by the dry-etching.
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34. The laser diode array of claim 28 in which the first layer structure comprises a solder layer that joins the nitride semiconductor membrane to the thermally conducting substrate.
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35. The laser diode array of claim 28 in which the first layer structure comprises an Au—
- Au thermo-compression bond that joins the nitride semiconductor membrane to the thermally conducting substrate.
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36. The laser diode array of claim 28 in which the first surface of the membrane has been formed by the process that includes removing the insulating substrate and then preparing the interface for a layer structure;
- the first layer structure including the common electrical contact;
the second layer structure including the first and second separate electrical contacts.
- the first layer structure including the common electrical contact;
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37. The laser diode array of claim 28 in which the second surface of the membrane has been formed by the process that includes removing the insulating substrate and then preparing the interface for a layer structure;
- the first layer structure including the common electrical contact;
the second layer structure including the first and second separate electrical contacts.
- the first layer structure including the common electrical contact;
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38. The laser diode array of claim 28 in which the second surface of the membrane has been formed by the process that includes removing the insulating substrate and then preparing the interface for a layer structure;
- the first layer structure including the first and second separate electrical contacts;
the second layer structure including the common electrical contact.
- the first layer structure including the first and second separate electrical contacts;
Specification