Thin film-structure and a method for producing the same

• US 6,759,261 B2
• Filed: 04/25/2000
• Issued: 07/06/2004
• Est. Priority Date: 05/07/1999
• Status: Expired due to Fees

• Current Assignee: Tokyo Institute of Technology (National University Corporation Tokyo Institute of Technology)
• Original Assignee: Tokyo Institute of Technology (National University Corporation Tokyo Institute of Technology)
• Inventors: Hata, Seiichi, Shimokohbe, Akira
• Primary Examiner(s): Pert, Evan
• Assistant Examiner(s): SARKAR, ASOK K
• Application Number:
  US09/556,795
• Publication Number:
  US 20020072203A1
• Time in Patent Office: 1,533 Days
• Field of Search: 438/48, 438/52, 438/50
• US Class Current: 438/48
• CPC Class Codes: B81B 2203/0109 Bridges
• CPC Class Codes: B81B 2203/0118 Cantilevers
• CPC Class Codes: B81C 1/00682 Treatments for improving mechanical properties, not provided for in B81C1/00658 - B81C1/0065
• CPC Class Codes: B81C 2201/0167 by adding further layers of materials having complementary strains, i.e. compressive or tensile strain

Abstract

A thin film made of an amorphous material having supercooled liquid phase region is formed on a substrate. Then, the thin film is heated to a temperature within the supercooled liquid phase region and is deformed by its weight, mechanical external force, electrostatic external force or the like, thereby to form a thin film-structure. Thereafter, the thin film-structure is cooled down to room temperature, which results in the prevention of the thin film'"'"'s deformation.

Claims

1. A method for producing a thin film-structure comprising the steps of:

forming on a substrate a thin film made of an amorphous material film exhibiting a viscous flow within a range 10¹¹-10¹³ Pa·

S when heated at a temperature within a supercooled liquid phase region;

heating the thin film to a temperature within the supercooled liquid phase region so that the thin film has a viscous flow between 10¹¹-10¹³ Pa·

S at a glass-transition temperature;

deforming the thin film to a given shape without the use of an external force; and

cooling the thin film to room temperature from the temperature within the supercooled liquid phase region to stop deforming the thin film and thereby forming the thin film-structure.

2. A method for producing a thin film-structure as defined in claim 1, wherein the amorphous material has a glass-transition temperature within 200-600°

C. and a temperature width of not less than 20°

C. in the supercooled liquid phase region.

3. A method for producing a thin film-structure as defined in claim 1, wherein an opposite electrode is formed opposing to the thin film, the thin film being made of a conductive material.

4. A method for producing a thin film-structure as defined in claim 1, wherein an electrode layer made of a conductive material is formed nearby the thin film, an opposite electrode being formed opposing to the thin film.

5. A method for producing a thin film-structure as defined in claim 1, wherein a magnetic layer made of a magnetic material is formed nearby the thin film, an opposite electrode being formed opposing to the magnetic layer.

6. A method for producing a thin film-structure as defined in claim 5, wherein the thin film is heated in a temperature range of the Curie Temperature of the magnetic material of the magnetic layer from a temperature within the supercooled liquid phase region.

7. A method for producing a thin film-structure as defined in claim 6, wherein the Curie Temperature of the magnetic material is 210-1200°

C.

8. A method for producing a thin film-structure as defined in claim 7, wherein the magnetic material is at least one from Ni, Fe, Co and Mn.

9. A method for producing a thin film-structure as defined in claim 1, wherein a subsidiary layer made of a material having a different thermal expansion coefficient from that of the amorphous material is formed nearby the thin film.

10. A method for producing a thin film-structure as defined in claim 9, wherein the subsidiary layer has a thermal expansion coefficient of not more than 5×

10<sup>−

6</sup> or 15×

10<sup>−

6</sup>-40×

10<sup>−

6</sup> at not less than 200°

C.

11. A method for producing a thin film-structure as defined in claim 9, wherein the subsidiary layer has a not more than one-hundredth thickness of the thin film.

12. A method for producing a thin film-structure as defined in claim 9, wherein the subsidiary layer is a mixed layer made of the material of the substrate and the amorphous material of the thin film.

13. A method for producing a thin film-structure as defined in claim 1, wherein a subsidiary layer including an internal stress is formed nearby the thin film.

14. A method for producing a thin film-structure as defined in claim 13, wherein the subsidiary layer has a compressive or tensile stress of which absolute value is 1 MPa to 3 GPa.

15. A method for producing a thin film-structure as defined in claim 13, wherein the subsidiary layer has a not more than one-hundredth thickness of the thin film.

16. A method for producing a thin film-structure as defined in claim 13, wherein the subsidiary layer is a mixed layer made of the material of the substrate and the amorphous material of the thin film.