Double LDD devices for improved DRAM refresh

• US 6,759,288 B2
• Filed: 08/01/2002
• Issued: 07/06/2004
• Est. Priority Date: 08/22/2000
• Status: Expired due to Fees

• Current Assignee: Round Rock Research LLC
• Original Assignee: Micron Technology, Inc.
• Inventors: McQueen, Mark, Tran, Luan C., Kerr, Robert
• Primary Examiner(s): Nhu, David
• Application Number:
  US10/208,830
• Publication Number:
  US 20020195626A1
• Time in Patent Office: 705 Days
• Field of Search: 438/194, 438/289, 438/230, 438/231, 438/232, 438/301, 438/305, 438/306, 438/309, 438/332, 438/311, 438/680
• US Class Current: 438/194
• CPC Class Codes: H01L 29/6653 using the removal of at least part of spacer, e.g. disposable spacer
• CPC Class Codes: H01L 29/6656 using multiple spacer layers, e.g. multiple sidewall spacers
• CPC Class Codes: H01L 29/6659 with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
• CPC Class Codes: H10B 12/09 with simultaneous manufacture of the peripheral circuit region and memory cells
• CPC Class Codes: H10B 12/50 Peripheral circuit region structures

Abstract

An integrated circuit device with improved DRAM refresh characteristics, and a novel method of making the device, is provided. A semiconductor substrate is provided with gate structures formed on its surface in each of an array portion and a peripheral portion. Single lightly doped regions are formed adjacent to the channel regions by ion implantation in the substrate. Dielectric spacers having a first width are formed on the substrate surface adjacent to the gate structures covering at least a portion of the single lightly doped regions. Heavily-doped regions are ion-implanted on opposite sides of the gate structure in the peripheral portion. The dielectric spacers are etched back to a second width smaller than the first width. Double lightly doped regions are formed by ion implantation in the substrate in an area of the substrate left exposed by the spacer etch back. Triple lightly doped regions may be also be formed by a first implant at the gate edge, a second implant through an intermediate spacer, and a third implant after the spacer etch back.

Claims

1. A method of forming a semiconductor device, comprising:

forming a single lightly doped region in a substrate adjacent a channel region, said channel region residing below a gate structure formed on said substrate;

forming a dielectric spacer on at least one side of said gate structure;

forming a heavily doped region in a portion of said substrate not covered by said dielectric spacer and adjacent said single lightly doped region;

narrowing said dielectric spacer on said at least one side of said gate structure; and

forming a double lightly doped region in said substrate between said heavily doped region and said single lightly doped region.

2. The method of claim 1 wherein said semiconductor device is a peripheral device.

3. The method of claim 1 wherein said forming of said dielectric spacer includes forming on one side of said gate structure and said narrowing includes narrowing said dielectric spacer on one side of said gate structure.

4. The method of claim 1, wherein said forming of said dielectric spacer includes forming on both sides of said gate structure and said narrowing includes narrowing said dielectric spacer on both sidcs of said gate structure.

5. The method of claim 1 wherein said act of forming said double lightly doped region is performed subsequent to said acts of forming said heavily doped region and narrowing said dielectric spacer.

6. The method of claim 1, further comprising forming a dielectric layer on said gate structure and said substrate bcfore forming said single lightly doped region through said dielectric layer, wherein a portion of said dielectric layer is subsequently removed to form said spacer.

7. The method of claim 1 further comprising forming a dielectric layer on said gate structure and said substrate after forming said single lightly doped region, wherein a portion of said dielectric layer is removed to form said spacer.

8. The method of claim 7 further comprising forming a triple lightly doped region in said substrate adjacent said double lightly doped region, wherein said double lightly doped region lies between said single lightly doped region and said triple lightly doped region.

9. The method of claim 6 wherein said forming of said dielectric layer includes depositing tetraethylorthosilicate (TEOS) or other dielectrics to a thickness of between about 30 and about 200 angstroms.

10. The method of claim 7 wherein said forming of said dielectric layer includes depositing tetraethylorthosilicate (TEOS) or other dielectrics to a thickness of between about 30 and about 200 angstroms.

11. The method of claim 1 further comprising forming a halo implant region between said single lightly doped region and said channel region.

12. The method of claim 8 further comprising forming a halo implant region between said single lightly doped region and said channel region.

14. The method of claim 11 wherein said act of forming said halo implant region is performed subsequent to said act of forming said single lightly doped region and prior to said act of forming said double lightly doped region.

15. The method of claim 11 wherein said act of forming said halo implant region is performed prior to said act of forming said single lightly doped region and prior to said act of forming said double lightly doped region.

16. The method of claim 11 wherein said act of forming said halo implant region is performed subsequent to said act of forming said single lightly doped region and subsequent to said act of forming said double lightly doped region.

27. The method of claim 11 wherein said dielectric layer is formed from a material different from a material of said dielectric spacer.

13. The method of claim wherein said act of forming said single lightly doped region is performed subsequent to formation of said gate structure, said act of forming said double lightly doped region is performed through said dielectric layer, and said act of forming said triple lightly doped region is performed subsequent to said act of narrowing said dielectric spacer.

17. A method of forming a memory device including a memory array portion and a peripheral logic portion, comprising:

forming at least one gate structure in an array portion of the device and at least one gate structure in a penphcry portion of the device, whereby each said gate structure controls charge carriers in a respective channel region of said substrate;

forming a single lightly doped region in said substrate on opposite sides of each said respective channel region;

forming a dielectric spacer having a first width adjacent opposite sides of each of said gate structures, wherein a portion of said single lightly doped region underlies said spacer;

forming a heavily-doped region in said substrate on opposite sides of said gate structure in said periphery portion;

removing a portion of said spacer from the sides of said gate structure such that said spacer has a second width smaller than said first width; and

forming a double lightly doped region in said substrate adjacent said single lightly doped region, wherein said double lightly doped region underlies a former position of said removed portion of said spacer.

18. The method of claim 17 wherein said removing of said portion of said spacer causes said second spacer width to be about 25 to about 75 percent of said first spacer width.

19. The method of claim 17 further comprising forming at least one halo implant region in said periphery portion between said single lightly doped region and said channel region.

20. The method of claim 19 wherein said forming of said halo implant region includes tilt-angle doping of said periphery portion of said substrate with p-type dopant ions at an angle between about 0 and about 45 degrces.

21. The method of claim 20 wherein said p-type dopant is boron or indium.

22. The method of claim 19 wherein said forming of said halo implant region includes tilt-angle doping of said periphery portion of said substrate with n-type dopant ions at an angle between about 0 and about 45 degrees.

23. The method of claim 22 wherein said n-type dopant is phosphorus, arsenic or antimony.

24. The method of claim 17 further comprising forming a dielectric layer on said gate structure and said substrate before forming said single lightly doped region, wherein a portion of said dielectric layer is removed to form said spacer.

25. The method of claim 24 wherein said dielectric layer is formed from a material different from a material of said dielectric spacer.

26. The method of claim 17 further comprising forming a dielectric layer on said gate structure and said substrate after forming said single lightly doped region, wherein a portion of said dielectric layer is removed to form said spacer.

28. The method of claim 26 further comprising forming at least one triple lightly doped region in said substrate adjacent said double lightly doped region in said array portion, wherein said double lightly doped region of said array portion lies between said single lightly doped region and said triple lightly doped region in said array portion.

29. The method of claim 24 wherein said forming of said dielectric layer includes depositing tretraethylorthosilicate (TEOS) or other dielectrics to a thickness of between about 30 and about 200 angsrroms.

30. The method of claim 28 wherein said forming of said dielectric layer includes depositing tetracthylorthosilicate (TEOS) or other dielectrics to a thickness of between about 30 and about 200 angstroms.

31. The method of claim 24 wherein said forming of said dielectric layer includes depositing a dielectric material to a thickness of between about 25 to about 50 percent of said first spacer width.

32. The method of claim 26 wherein said forming of said dielectric layer includes depositing a dielectric material to a thickness of between about 25 to about 50 percent of said first spacer width.

33. The method of claim 17 further comprising forming at least one conductive plug in said array portion adjacent said spacer overlying at least said double lightly doped region.

34. The method of claim 24 further comprising forming at least one conductive plug in said array portion adjacent said spacer overlying at least said double lightly doped region.

35. The method of claim 28 further comprising forming at least one conductive plug in said array portion adjacent said spacer overlying at least said triple lightly doped region.

36. A method of forming a semiconductor device, said method comprising:

forming at least one gate structure on a substrate, said at least one gate structure defining at least one channel region residing below said at least one gate structure;

forming at least one single lightly doped region in said substrate adjacent said at least one channel region;

forming a dielectric spacer on at least one side of said at least one gate structure;

forming at least one heavily doped region in a portion of said substrate not covered by said dielectric spacer and adjacent said at least one single lightly doped region;

narrowing said dielectric spacer OD said at least one side of said at least one gate structure; and

forming at least one double lightly doped region in said substrate, adjacent said at least one channel region and said at least one single lightly doped region.