Method of avoiding dielectric arcing

• US 6,759,342 B2
• Filed: 10/11/2002
• Issued: 07/06/2004
• Est. Priority Date: 10/11/2002
• Status: Expired due to Fees

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Li, Lain-Jong, Yao, Chih-Hsiang, Chen, Bi-Troug, Jan, Syun-Ming
• Primary Examiner(s): Pham, Long
• Assistant Examiner(s): LOUIE, WAI SING
• Application Number:
  US10/269,219
• Publication Number:
  US 20040072405A1
• Time in Patent Office: 634 Days
• Field of Search: 438/464, 438/618, 438/718
• US Class Current: 438/718
• CPC Class Codes: H01J 2237/0206 Extinguishing, preventing or controlling unwanted discharges
• CPC Class Codes: H01J 2237/3342 Resist stripping
• CPC Class Codes: H01L 21/3105 After-treatment
• CPC Class Codes: H01L 21/31116 by dry-etching

Abstract

A method for reducing electrical charge imbalances in a semiconductor process wafer including providing a semiconductor process wafer including a dielectric insulating layer; exposing the semiconductor process wafer to a semiconductor process whereby an electrical charge imbalance accumulates in charge imbalance portions of the dielectric insulating layer; and, treating the semiconductor process wafer with a controlled atmosphere of treatment gas including at least one of inert gas and hydrogen to reduce an accumulated charge imbalance in the charge imbalance portions.

Claims

1. A method for reducing electrical charge imbalances in a semiconductor process wafer comprising the steps of:

providing a semiconductor process wafer comprising a dielectric insulating layer;

exposing the semiconductor process wafer to a semiconductor process whereby an electrical charge imbalance accumulates in charge imbalance portions of the dielectric insulating layer; and

,

treating the semiconductor process wafer with a controlled atmosphere of treatment gas comprising one of a continuous and periodic flow of at least one of inert gas and hydrogen to reduce an accumulated charge imbalance in the charge imbalance portions.

2. The method of claim 1, wherein the semiconductor process includes at least one of a lithographic patterning process, a plasma assisted etching process, and a plasma assisted deposition process.

3. The method of claim 1, wherein the semiconductor process comprises a photolithographic process whereby the electrical charge imbalances accumulates upon exposure of a resist layer overlying the dielectric insulating layer to photons.

4. The method of claim 1, wherein the step of treating comprises an in-situ treatment following the step of exposing including providing a means for controllably contacting the semiconductor process wafer with the treatment gas the means for controllably contacting comprising controllably altering at least one of the treatment gas pressure and the treatment gas flow rate.

5. The method of claim 4, wherein the means for controllably contacting the semiconductor process wafer with the treatment gas includes a demountable sealable enclosure for at least one of storing and transporting the semiconductor process wafer.

6. The method of claim 5, wherein the demountable sealable enclosure comprises a means for shielding the semiconductor process wafer from incident light exposure.

7. The method of claim 1, further comprising the step of shielding the semiconductor process wafer from incident light exposure following the step of treating.

8. The method of claim 1, wherein the treatment gas comprises at least one of argon, helium, and hydrogen.

9. The method of claim 8, wherein the treatment gas comprises a gas mixture having a volumetric ratio with respect to the total volume of treatment gas of inert gas to hydrogen of about 1 to 1 to about 10 to 1.

10. The method of claim 9, wherein the step of treating comprises a continuous flow of treatment gas at a flow rate of about 10 sccm to about 500 sccm for a period of about 30 seconds to about 30 minutes.

11. A method for avoiding or reducing photo-induced electrical charge imbalances leading to electric discharge arcing comprising the steps of:

providing a semiconductor process wafer comprising a dielectric insulating layer and an overlying resist layer for forming a lithographic pattern therein;

exposing the resist layer to an activating source of photons thereby forming electrical charge imbalances in the semiconductor process wafer; and

,

controllably contacting the semiconductor process wafer with a treatment gas comprising one of a continuous and periodic flow of at least one of inert gas and hydrogen to at least partially neutralize the electrical charge imbalances.

12. The method of claim 11, wherein the step of controllably contacting comprises providing at least one of a controlled pressure and gas flow rate of the treatment gas.

13. The method of claim 11, further comprising transporting the semiconductor process wafer in a portable semiconductor process wafer holder comprising a means for shielding the semiconductor process wafer from incident light exposure following the step of controllably contacting.

14. The method of claim 13, wherein the portable semiconductor process wafer holder is demountably detached from means for controlling a treatment gas pressure and a treatment gas flow rate following the step of treating and prior to transporting the semiconductor process wafer.

15. The method of claim 11, further comprising the step of shielding the semiconductor process wafer from incident light exposure following the step of controllably contacting.

16. The method of claim 11, wherein the treatment gas comprises at least one of argon, helium, and hydrogen.

17. The method of claim 16, wherein the treatment gas comprises a gas mixture including a volumetric ratio with respect to the total volume of treatment gas of inert gas to hydrogen of about 1 to 1 to about 10 to 1.

18. The method of claim 17, wherein the step of controllably contacting comprises a continuous flow of treatment gas at a flow rate about 10 sccm to about 500 sccm for a period of about 30 seconds to about 30 minutes.