Silicon device
First Claim
1. A silicon device comprising:
- an insulating substrate having a surface including a recess, a beam-like structure made of silicon, on the front surface of the insulating substrate, and surrounding the recess, the beam-like structure comprising at least one functional section having a supporting section bonded to the insulating substrate and at least one cantilever integral with the supporting section and extending across the recess;
a frame made of silicon surrounding and spaced from the beam-like structure and on the insulating substrate; and
a conductive film having electrical continuity with the frame and on the surface of the insulating substrate, at least directly opposite the cantilever.
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Accused Products
Abstract
A silicon device includes an insulating substrate having a recess on the surface of the substrate, and a beam-like structure made of silicon on the front surface of the insulating substrate, surrounds the recess. The beam-like structure includes at least one functional section having a supporting section bonded to the insulating substrate and at least one cantilever integral with the supporting section and extending across the recess. The silicon device also includes a frame made of silicon surrounding and spaced from the beam-like structure and on the insulating substrate. The silicon device also includes a conductive film having electrical continuity with the frame and on the surface of the insulating substrate, at least in a portion directly opposite the cantilever. The conductive film prevents the insulating substrate from being charged, thereby significantly suppressing damage of the beam-like structure during dry etching.
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Citations
7 Claims
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1. A silicon device comprising:
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an insulating substrate having a surface including a recess, a beam-like structure made of silicon, on the front surface of the insulating substrate, and surrounding the recess, the beam-like structure comprising at least one functional section having a supporting section bonded to the insulating substrate and at least one cantilever integral with the supporting section and extending across the recess;
a frame made of silicon surrounding and spaced from the beam-like structure and on the insulating substrate; and
a conductive film having electrical continuity with the frame and on the surface of the insulating substrate, at least directly opposite the cantilever. - View Dependent Claims (2, 3, 4, 5)
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6. A silicon device comprising:
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an insulating substrate having a surface including a recess, a beam-like structure made of silicon, on the front surface of the insulating substrate, and surrounding the recess, the beam-like structure comprising at least one functional section having a supporting section bonded to the insulating substrate and, at least one cantilever integral with the supporting section and extending across the recess, said beam-like silicon structure comprising at least two functional structures that are electrically insulated from each other and have different volumes;
a frame made of silicon, surrounding and spaced from the beam-like structure and on the insulating substrate; and
a conductive film having electrical continuity with the supporting section of the functional structure having the larger volume, and on the surface of the insulating substrate, at least directly opposite the cantilever. - View Dependent Claims (7)
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Specification