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High-brightness light emitting diode

  • US 6,759,685 B2
  • Filed: 09/30/2002
  • Issued: 07/06/2004
  • Est. Priority Date: 11/07/2001
  • Status: Active Grant
First Claim
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1. A high-brightness light emitting diode, comprising:

  • an Si substrate;

    a first non-reflective adhesive layer formed on said Si substrate;

    a non-adhesive reflective layer formed on said first non-reflective adhesive layer and comprising a metal and a non-polymer insulator;

    an LED epitaxial layer formed on said non-adhesive reflective layer, having a pn junction structure to define a first-type layer and a second-type layer adjacent to said non-adhesive reflective layer, and having a metal contact layer formed by partial surface of said second-type layer;

    a first-type ohmic contact electrode formed on said first-type layer of said LED epitaxial layer; and

    a second-type ohmic contact electrode formed on said metal contact layer of said LED epitaxial layer.

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