Inductor and fabricating method thereof

• US 6,759,727 B2
• Filed: 09/30/2002
• Issued: 07/06/2004
• Est. Priority Date: 08/23/1999
• Status: Expired due to Fees

• Current Assignee: Intellectual Ventures II LLC (Intellectual Ventures LLC)
• Original Assignee: Hynix Semiconductor Incorporated (SK Hynix Inc.)
• Inventors: Ju, Jae-il
• Primary Examiner(s): Cao, Phat X.
• Application Number:
  US10/259,878
• Publication Number:
  US 20030019835A1
• Time in Patent Office: 645 Days
• Field of Search: 257/531, 257/528, 257/516
• US Class Current: 257/531
• CPC Class Codes: H01F 41/043 by thick film techniques
• CPC Class Codes: H01L 21/84 the substrate being other than a semiconductor body, e.g. being an insulating body
• CPC Class Codes: H01L 27/08 including only semiconductor components of a single kind
• CPC Class Codes: H01L 27/1203 the substrate comprising an insulating body on a semiconductor body, e.g. SOI three-dimensional layout H01L27/0688
• CPC Class Codes: H01L 28/10 Inductors

Abstract

In the method of fabricating an inductor, at least first and second conductive segments are formed in a semiconductor layer spaced apart in a first direction. A first dielectric layer is formed over a portion of the semiconductor layer along the first direction such that the first dielectric layer crosses the first and second conductive segments. A conductive core is formed on the first dielectric layer, and a second dielectric layer is formed over the semiconductor layer. First and second contact holes are formed in the second dielectric layer such that the first contact hole exposes a portion of the first conductive segment on a first side of the first dielectric layer and the second contact hole exposes a portion of the second conductive segment on a second side of the first dielectric layer. Then, a conductive pattern segment is formed over the second dielectric layer such that the conductive pattern segment electrically connects the first and second conductive segments via the first and second contact holes.

Claims

1. An inductor, comprising:

first and second conductive segments formed in a semiconductor layer, the first and second conductive segments spaced apart in a first direction;

a first dielectric layer formed on a portion of the semiconductor layer and the first and second conductive segments along the first direction;

a conductive core formed over the first dielectric layer;

a second dielectric layer formed over the semiconductor layer;

at least first and second contact holes in the second dielectric layer, the first contact hole exposing a portion of the first conductive segment on a first side of the first dielectric layer and the second contact hole exposing a portion of the second conductive segment on a second side of the first dielectric layer, the second side being opposite the first side; and

a conductive pattern segment formed over the second dielectric layer that electrically connects the first and second conductive segments via the first and second contact holes.

2. The inductor of claim 1, further comprising:

a semiconductor substrate;

an insulating layer on the semiconductor substrate; and

wherein

the semiconductor layer is formed on the insulating layer.

3. The inductor of claim 1, wherein the semicondcutor layer is monocrystalline silicon.

4. The inductor of claim 1, wherein the first and second conductive segments include one of n-type impurities and p-type impurities.

5. The inductor of claim 1, wherein the first dielectric layer includes silicon oxide.

6. The inductor of claim 1, wherein

the first dielectric layer has a first width;

and

the conductive core has a second width, which is less than the first width.

7. The inductor of claim 1, wherein the conductive core includes polysilicon doped with one of p-type impurities and n-type impurities.

8. The inductor of claim 1, wherein the second dielectric layer includes one of silicon oxide and boro-phospho silicate glass.

9. The inductor of claim 1, wherein the conductive pattern segment includes one of Al, Ti, W, Co, and Mo.

10. The inductor of claim 1, further comprising:

a device separation area formed in the semiconductor layer to define at least one active area; and

wherein

the first and second conductive segments are formed in the active area.

11. The inductor of claim 1, wherein the device separation area comprises:

insulating material formed on sides of a trench in the semiconductor layer, and filler material formed in the trench.

12. The inductor of claim 10, wherein the filler material includes one of undoped polycrystalline silicon, silicon oxide, and silicon nitride.

13. The inductor of claim 1, wherein the conductive segments and the conductive pattern segment form a three-dimensional spiral with the conductive core running along the longitudinal axis of the spiral.