Spin-valve thin-film magnetic element suitable for track narrowing and thin-film magnetic head using the same

• US 6,760,200 B2
• Filed: 11/19/2001
• Issued: 07/06/2004
• Est. Priority Date: 11/24/2000
• Status: Expired due to Fees

• Current Assignee: TDK Corporation
• Original Assignee: ALPS Electric Company Limited (Alps Alpine Co., Ltd.)
• Inventors: Hasegawa, Naoya
• Primary Examiner(s): Watko, Julie Anne
• Application Number:
  US09/989,788
• Publication Number:
  US 20020064006A1
• Time in Patent Office: 960 Days
• Field of Search: 360/324.12, 360/324.1, 360/324, 360/313, 360/110
• US Class Current: 360/324.12
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 25/00 Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
• CPC Class Codes: G11B 5/3116 Shaping of layers, poles or gaps for improving the form of the electrical signal transduced, e.g. for shielding, contour effect, equalizing, side flux fringing, cross talk reduction between heads or between heads and information tracks G11B5/3113, G11B5/245 take precedence
• CPC Class Codes: G11B 5/3903 using magnetic thin film layers or their effects, the films being part of integrated structures
• CPC Class Codes: H01F 10/3268 the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
• CPC Class Codes: H01F 41/325 applying a noble metal capping on a spin-exchange-coupled multilayer, e.g. spin filter deposition

Abstract

A spin-valve thin-film magnetic element includes a substrate, an antiferromagnetic layer, a pinned magnetic layer in contact with the antiferromagnetic layer, a free magnetic layer formed on the pinned magnetic layer with a nonmagnetic conductive layer therebetween, a pair of hard bias layers, and a pair of electrode layers. The magnetic read track width Tw is set at 0.4 μm or less. At least a part of the free magnetic layer is composed of an NiFe alloy, the Ni content C_Ni in the NiFe alloy being in the range of 70.2 to 89.9 atomic percent, or the magnetostriction λs of the free magnetic layer is in the range of −7.0×10⁻⁶ to 2.0×10⁻⁵. A thin-film magnetic head using such a spin-valve thin-film magnetic head is also disclosed.

Claims

1. A spin-valve thin-film magnetic element comprising:

a substrate;

an antiferromagnetic layer;

a pinned magnetic layer in contact with the antiferromagnetic layer, the magnetization direction of the pinned magnetic layer being pinned by an exchange coupling magnetic field with the antiferromagnetic layer;

a free magnetic layer formed on the pinned magnetic layer with a nonmagnetic conductive layer therebetween, the magnetization direction of the free magnetic layer being aligned in a direction substantially orthogonal to the magnetization direction of the pinned magnetic layer;

a pair of hard bias layers for aligning the magnetization direction of the free magnetic layer in the direction substantially orthogonal to the magnetization direction of the pinned magnetic layer, at least a part of the free magnetic layer comprising an NiFe alloy; and

a pair of electrode layers for applying a sensing current to the pinned magnetic layer, the nonmagnetic conductive layer, and the free magnetic layer,

wherein the magnetic read track width Tw (μ

m) and the Ni content C_Ni (at. %), which are shown in accompanying FIG. 1 as point (Tw, C_Ni), are within the range obtained by linking point A₁ (0.4, 89.9), point B₁ (0.35,

     89), point C₁ (0.3, 87.7), point D₁ (0.25, 86.5), point E₁ (0.22, 84.9), point F₁ (0.20,

     83), point G₁ (0.19, 82.5), point H₁ (0.18,

     81), point I₁(0.17, 80.5), point J₁ (0.15, 77.3), point K₁ (0.13, 76.8), point L₁ (0.1,

     75), point M₁ (0.1, 70.2), point N₁ (0.13, 70.2), point O₁ (0.15, 70.2), point P₁ (0.17, 70.2), point Q₁ (0.18, 70.2), point R₁ (0.19, 70.2), point S₁ (0.20, 70.2), point T₁ (0.22, 70.2), point U₁ (0.25, 71.5), point V₁ (0.3, 73.6), point W₁ (0.35, 75.6), and point X₁ (0.4, 77.3).

2. A spin-valve thin-film magnetic element according to claim 1, wherein the magnetic read track width Tw (μ

m) and the Ni content C_Ni (at. %), which are shown in accompanying FIG. 3 as point (Tw, C_Ni), are within the range obtained by linking point B₁ (0.35,

     89), point C₁ (0.3, 87.7), point D₁ (0.25, 86.5), point E₁ (0.22, 84.9), point F₁ (0.20,

     83), point G₁ (0.19, 82.5), point H₁ (0.18,

     81), point I₁ (0.17, 80.5), point J₁ (0.15, 77.3), point K₁ (0.13, 76.8), point L₁ (0.1,

     75), point M₁ (0.1, 70.2), point N₁ (0.13, 70.2), point O₁ (0.15, 70.2), point P₁ (0.17, 70.2), point Q₁ (0.18, 70.2), point R₁ (0.19, 70.2), point S₁ (0.20, 70.2), point T₁ (0.22, 70.2), point U₁ (0.25, 71.5), point V₁ (0.3, 73.6), and point W₁ (0.35, 75.6).

3. A spin-valve thin-film magnetic element according to claim 2, wherein the magnetic read track width Tw (μ

m) and the Ni content C_Ni (at. %), which are shown in accompanying FIG. 5 as point (Tw, C_Ni), are within the range obtained by linking point C₁ (0.3, 87.7), point D₁ (0.25, 86.5), point E₁ (0.22, 84.9), point F₁ (0.20,

     83), point G₁ (0.19, 82.5), point H₁ (0.18,

     81), point I₁ (0.17, 80.5), point J₁ (0.15, 77.3), point K₁ (0.13, 76.8), point L₁ (0.1,

     75), point M₁ (0.1, 70.2), point N₁ (0.13, 70.2), point O₁ (0.15, 70.2), point P₁ (0.17, 70.2), point Q₁ (0.18, 70.2), point R₁ (0.19, 70.2), point S₁ (0.20, 70.2), point T₁ (0.22, 70.2), point U₁ (0.25, 71.5), and point V₁ (0.3, 73.6).

4. A spin-valve thin-film magnetic element according to claim 3, wherein the magnetic read track width Tw (μ

m) and the Ni content C_Ni (at. %), which are shown in accompanying FIG. 7 as point (Tw, C_Ni), are within the range obtained by linking point D₁ (0.25, 86.5), point E₁ (0.22, 84.9), point F₁ (0.20,

     83), point G₁ (0.19, 82.5), point H₁ (0.18,

     81), point I₁ (0.17, 80.5), point J₁ (0.15, 77.3), point K₁ (0.13, 76.8), point L₁ (0.1,

     75), point M₁ (0.1, 70.2), point N₁ (0.13, 70.2), point O₁ (0.15, 70.2), point P₁ (0.17, 70.2), point Q₁ (0.18, 70.2), point R₁ (0.19, 70.2), point S₁ (0.20, 70.2), point T₁ (0.22, 70.2), and point U₁ (0.25, 71.5).

5. A spin-valve thin-film magnetic element according to claim 4, wherein the magnetic read track width Tw (μ

m) and the Ni content C_Ni (at. %), which are shown in accompanying FIG. 9 as point (Tw, C_Ni), are within the range obtained by linking point F₁ (0.20,

     83), point G₁ (0.19, 82.5), point H₁ (0.18,

     81), point I₁ (0.17, 80.5), point J₁ (0.15, 77.3), point K₁ (0.13, 76.8), point L₁ (0.1,

     75), point M₁ (0.1, 70.2), point N₁ (0.13, 70.2), point O₁ (0.15, 70.2), point P₁ (0.17, 70.2), point Q₁ (0.18, 70.2), point R₁ (0.19, 70.2), and point S₁ (0.20, 70.2).

6. A spin-valve thin-film magnetic element according to claim 5, wherein the magnetic read track width Tw (μ

m) and the Ni content C_Ni (at. %), which are shown in accompanying FIG. 11 as point (Tw, C_Ni), are within the range obtained by linking point G₁ (0.19, 82.5), point H₁ (0.18,

     81), point I₁ (0.17, 80.5), point J₁ (0.15, 77.3), point K₁ (0.13, 76.8), point L₁ (0.1,

     75), point M₁ (0.1, 70.2), point N₁ (0.13, 70.2), point O₁ (0.15, 70.2), point P₁ (0.17, 70.2), point Q₁ (0.18, 70.2), and point R₁ (0.19, 70.2).

7. A spin-valve thin-film magnetic element according to claim 6, wherein the magnetic read track width Tw (μ

m) and the Ni content C_Ni (at. %), which are shown in accompanying FIG. 13 as point (Tw, C_Ni), are within the range obtained by linking point H₁ (0.18,

     81), point I₁ (0.17, 80.5), point J₁ (0.15, 77.3), point K₁ (0.13, 76.8), point L₁ (0.1,

     75), point M₁ (0.1, 70.2), point N₁ (0.13, 70.2), point O₁ (0.15, 70.2), point P₁ (0.17, 70.2), and point Q₁ (0.18, 70.2).

8. A spin-valve thin-film magnetic element according to claim 7, wherein the magnetic read track width Tw (μ

m) and the Ni content C_Ni (at. %), which are shown in accompanying FIG. 15 as point (Tw, C_Ni), are within the range obtained by linking point I₁ (0.17, 80.5), point J₁ (0.15, 77.3), point K₁ (0.13, 76.8), point L₁ (0.1,

     75), point M₁ (0.1, 70.2), point N₁ (0.13, 70.2), point O₁ (0.15, 70.2), and point P₁ (0.17, 70.2).

9. A spin-valve thin-film magnetic element according to claim 8, wherein the magnetic read track width Tw (μ

m) and the Ni content C_Ni (at. %), which are shown in accompanying FIG. 17 as point (Tw, C_Ni), are within the range obtained by linking point J₁ (0.15, 77.3), point K₁ (0.13, 76.8), point L₁ (0.1,

     75), point M₁ (0.1, 70.2), point N₁ (0.13, 70.2), and point O₁ (0.15, 70.2).

10. A spin-valve thin-film magnetic element according to claim 9, wherein the magnetic read track width Tw (μ

m) and the Ni content C_Ni (at. %), which are shown in accompanying FIG. 19 as point (Tw, C_Ni), are within the range obtained by linking point K₁ (0.13, 76.8), point L₁ (0.1,

     75), point M₁ (0.1, 70.2), and point N₁ (0.13, 70.2).

11. A spin-valve thin-film magnetic element according to claim 1, wherein the antiferromagnetic layer, the pinned magnetic layer, the nonmagnetic conductive layer, and the free magnetic layer are deposited in that order on the substrate.

12. A spin-valve thin-film magnetic element according to claim 1, wherein the antiferromagnetic layer comprises one of an X—

Mn alloy and a Pt—

Mn—

X′

alloy, where X is one element selected from the group consisting of Pt, Pd, Ir, Rh, Ru, and Os, and X′

is at least one element selected from the group consisting of Pd, Cr, Ru, Ni, Ir, Rh, Os, Au, Ag, Ne, Ar, Xe, and Kr.

13. A spin-valve thin-film magnetic element according to claim 1, wherein at least one of the pinned magnetic layer and the free magnetic layer is divided into two sublayers by a nonmagnetic intermediate layer to produce a ferrimagnetic state in which the magnetization directions of the sublayers are antiparallel to each other.

14. A spin-valve thin-film magnetic element according to claim 1, wherein the ratio of the width in the read track width direction of the free magnetic layer to the height in the element height direction of the free magnetic layer is approximately 1:

1 to 3;

2.

15. A thin-film magnetic head comprising a spin-valve thin-film magnetic element according to claim 1.

16. A spin-valve thin-film magnetic element comprising:

a substrate;

an antiferromagnetic layer;

a pinned magnetic layer in contact with the antiferromagnetic layer, the magnetization direction of the pinned magnetic layer being pinned by an exchange coupling magnetic field with the antiferromagnetic layer;

a free magnetic layer formed on the pinned magnetic layer with a nonmagnetic conductive layer therebetween, the magnetization direction of the free magnetic layer being aligned in a direction substantially orthogonal to the magnetization direction of the pinned magnetic layer;

a pair of hard bias layers for aligning the magnetization direction of the free magnetic layer in the direction substantially orthogonal to the magnetization direction of the pinned magnetic layer, at least a part of the free magnetic layer comprising an NiFe alloy; and

a pair of electrode layers for applying a sensing current to the pinned magnetic layer, the nonmagnetic conductive layer, and the free magnetic layer,

wherein the magnetic read track width Tw (μ

m) and the Ni content C_Ni (at. %), which are shown in accompanying FIG. 2 as point (Tw, C_Ni), are within the range obtained by linking point A₂ (0.4, 83.7), point B₂ (0.35, 83.9), point C₂ (0.3, 83.5), point D₂ (0.25,

     83), point E₂ (0.22, 82.9), point F₂ (0.20, 81.5), point G₂ (0.19,

     81), point H₂ (0.18,

     80), point J₂ (0.15, 78.4), point K₂ (0.13, 76.5), point L₂ (0.1,

     75), point M₂ (0.1, 70.6), point N₂ (0.13, 70.6), point O_{2 (}0.15, 70.6), point Q₂ (0.18, 71.7), point R₂ (0.19,

     72), point S₂ (0.20, 72.5), point T₂ (0.22, 73.6), point U₂ (0.25,

     74), point V₂ (0.3, 75.6), point W₂ (0.35, 76.5), and point X₂ (0.4, 77.3).

17. A spin-valve thin-film magnetic element according to claim 16, wherein the magnetic read track width Tw (μ

m) and the Ni content C_Ni (at. %), which are shown in accompanying FIG. 4 as point (Tw, C_Ni), are within the range obtained by linking point B₂ (0.35, 83.9), point C₂ (0.3, 83.5), point D₂ (0.25,

     83), point E₂ (0.22, 82.9), point F₂ (0.20, 81.5), point G₂ (0.19,

     81), point H₂ (0.18,

     80), point J₂ (0.15, 78.4), point K₂ (0.13, 76.5), point L₂ (0.1,

     75), point M₂ (0.1, 70.6), point N₂ (0.13, 70.6), point O₂ (0.15, 70.6), point Q₂ (0.18, 71.7), point R₂ (0.19,

     72), point S₂ (0.20, 72.5), point T₂ (0.22, 73.6), point U₂ (0.25,

     74), point V₂ (0.3, 75.6), and point W₂ (0.35, 76.5).

18. A spin-valve thin-film magnetic element according to claim 17, wherein the magnetic read track width Tw (μ

m) and the Ni content C_Ni (at. %), which are shown in accompanying FIG. 6 as point (Tw, C_Ni), are within the range obtained by linking point C₂ (0.3, 83.5), point D₂ (0.25,

     83), point E₂ (0.22, 82.9), point F₂ (0.20, 81.5), point G₂ (0.19,

     81), point H₂ (0.18,

     80), point J₂ (0.15, 78.4), point K₂ (0.13, 76.5), point L₂ (0.1,

     75), point M₂ (0.1, 70.6), point N₂ (0.13, 70.6), point O₂ (0.15, 70.6), point Q₂ (0.18, 71.7), point R₂ (0.19,

     72), point S₂ (0.20, 72.5), point T₂ (0.22, 73.6), point U₂ (0.25,

     74), and point V₂ (0.3, 75.6).

19. A spin-valve thin-film magnetic element according to claim 18, wherein the magnetic read track width Tw (μ

m) and the Ni content C_Ni (at. %), which are shown in accompanying FIG. 8 as point (Tw, C_Ni), are within the range obtained by linking point D₂ (0.25,

     83), point E₂ (0.22, 82.9), point F₂ (0.20, 81.5), point G₂ (0.19,

     81), point H₂ (0.18,

     80), point J₂ (0.15, 78.4), point K₂ (0.13, 76.5), point L₂ (0.1,

     75), point M₂ (0.1, 70.6), point N₂ (0.13, 70.6), point O₂ (0.15, 70.6), point Q₂ (0.18, 71.7), point R₂ (0.19,

     72), point S₂ (0.20, 72.5), point T₂ (0.22, 73.6), and point U₂ (0.25,

     74).

20. A spin-valve thin-film magnetic element according to claim 19, wherein the magnetic read track width Tw (μ

m) and the Ni content C_Ni (at. %), which are shown in accompanying FIG. 10 as point (Tw, C_Ni), are within the range obtained by linking point E₂ (0.22, 82.9), point F₂ (0.20, 81.5), point G₂ (0.19,

     81), point H₂ (0.18,

     80), point J₂ (0.15, 78.4), point K₂ (0.13, 76.5), point L₂ (0.1,

     75), point M₂ (0.1, 70.6), point N₂ (0.13, 70.6), point O₂ (0.15, 70.6), point Q₂ (0.18, 71.7), point R₂ (0.19,

     72), point S₂ (0.20, 72.5), and point T₂ (0.22, 73.6).

21. A spin-valve thin-film magnetic element according to claim 20, wherein the magnetic read track width Tw (μ

m) and the Ni content C_Ni (at. %), which are shown in accompanying FIG. 12 as point (Tw, C_Ni), are within the range obtained by linking point F₂ (0.20, 81.5), point G₂ (0.19, 8.1), point H₂ (0.18,

     80), point J₂ (0.15, 78.4), point K₂ (0.13, 76.5), point L₂ (0.1,

     75), point M₂ (0.1, 70.6), point N₂ (0.13, 70.6), point O₂ (0.15, 70.6), point Q₂ (0.18, 71.7), point R₂ (0.19,

     72), and point S₂ (0.20, 72.5).

22. A spin-valve thin-film magnetic element according to claim 21, wherein the magnetic read track width Tw (μ

m) and the Ni content C_Ni (at. %), which are shown in accompanying FIG. 14 as point (Tw, C_Ni), are within the range obtained by linking point G₂ (0.19,

     81), point H₂ (0.18,

     80), point J₂ (0.15, 78.4), point K₂ (0.13, 76.5), point L₂ (0.1,

     75), point M₂ (0.1, 70.6), point N₂ (0.13, 70.6), point O₂ (0.15, 70.6), point Q₂ (0.18, 71.7), and point R₂ (0.19,

     72).

23. A spin-valve thin-film magnetic element according to claim 22, wherein the magnetic read track width Tw (μ

m) and the Ni content C_Ni (at. %), which are shown in accompanying FIG. 16 as point (Tw, C_Ni), are within the range obtained by linking point H₂ (0.18,

     80), point J₂ (0.15, 78.4), point K₂ (0.13, 76.5), point L₂ (0.1,

     75), point M₂ (0.1, 70.6), point N₂ (0.13, 70.6), point O₂ (0.15, 70.6), and point Q₂ (0.18, 71.7).

24. A spin-valve thin-film magnetic element according to claim 23, wherein the magnetic read track width Tw (μ

m) and the Ni content C_Ni (at. %), which are shown in accompanying FIG. 18 as point (Tw, C_Ni), are within the range obtained by linking point J₂ (0.15, 78.4), point K₂ (0.13, 76.5), point L₂ (0.1,

     75), point M₂ (0.1, 70.6), point N₂ (0.13, 70.6), and point O₂ (0.15, 70.6).

25. A spin-valve thin-film magnetic element according to claim 24, wherein the magnetic read track width Tw (μ

m) and the Ni content C_Ni (at. %), which are shown in accompanying FIG. 20 as point (Tw, C_Ni), are within the range obtained by linking point K₂ (0.13, 76.5), point L₂ (0.1,

     75), point M₂ (0.1, 70.6), and point N₂ (0.13, 70.6).

26. A spin-valve thin-film magnetic element comprising:

a substrate;

an antiferromagnetic layer;

a pinned magnetic layer in contact with the antiferromagnetic layer, the magnetization direction of the pinned magnetic layer being pinned by an exchange coupling magnetic field with the antiferromagnetic layer;

a free magnetic layer formed on the pinned magnetic layer with a nonmagnetic conductive layer therebetween, the magnetization direction of the free magnetic layer being aligned in a direction substantially orthogonal to the magnetization direction of the pinned magnetic layer;

a pair of hard bias layers for aligning the magnetization direction of the free magnetic layer in the direction substantially orthogonal to the magnetization direction of the pinned magnetic layer; and

a pair of electrode layers for applying a sensing current to the pinned magnetic layer, the nonmagnetic conductive layer, and the free magnetic layer,

wherein the magnetic read track width Tw (μ

m) and the magnetostriction λ

s (×

10<sup>−

6</sup>), which are shown in accompanying FIG. 42 as point (Tw, λ

s), are within the range obtained by linking point SA₁ (0.4,

     6), point SB₁ (0.35,

     8), point SC₁ (0.3, 12.5), point SD₁ (0.25,

     18), point SE₁ (0.23,

     20), point SF₁ (0.2,

     20), point SG₁ (0.19,

     20), point SH₁ (0.18,

     20), point SI₁ (0.17,

     20), point SJ₁ (0.15,

     20), point SK₁ (0.1,

     20), point SL₁ (0.1,

     9), point SM₁ (0.15, 3.5), point SN₁ (0.17,

     2), point SO₁ (0.18,

     1), point SP₁ (0.19,

     0), point SQ₁ (0.2, −

0.7), point SR₁ (0.22, −

2), point SS₁ (0.25, −

3), point ST₁ (0.3, −

5), point SU₁ (0.35, −

6.3), and point SV₁ (0.4, −

7).

27. A spin-valve thin-film magnetic element according to claim 26, wherein the magnetic read track width Tw (μ

m) and the magnetostriction λ

s (×

10<sup>−

6</sup>), which are shown in accompanying FIG. 42 as point (Tw, λ

s), are within the range obtained by linking point SB₁ (0.35,

     8), point SC₁ (0.3, 12.5), point SD₁ (0.25,

     18), point SE₁ (0.23,

     20), point SF₁ (0.2,

     20), point SG₁ (0.19,

     20), point SH₁ (0.18,

     20), point SI₁ (0.17,

     20), point SJ₁ (0.15,

     20), point SK₁ (0.1,

     20), point SL₁ (0.1,

     9), point SM₁ (0.15, 3.5), point SN₁ (0.17,

     2), point SO₁ (0.18,

     1), point SP₁ (0.19,

     0), point SQ₁ (0.2, −

0.7), point SR₁ (0.22, −

2), point SS₁ (0.25, −

3), point ST₁ (0.3, −

5), and point SU₁ (0.35, −

6.3).

28. A spin-valve thin-film magnetic element according to claim 27, wherein the magnetic read track width Tw (μ

m) and the magnetostriction λ

s (×

10<sup>−

6</sup>), which are shown in accompanying FIG. 42 as point (Tw, λ

s), are within the range obtained by linking point SC₁ (0.3, 12.5), point SD₁ (0.25,

     18), point SE₁ (0.23,

     20), point SF₁ (0.2,

     20), point SG₁ (0.19,

     20), point SH₁ (0.18,

     20), point SI₁ (0.17,

     20), point SJ₁ (0.15,

     20), point SK₁ (0.1,

     20), point SL₁ (0.1,

     9), point SM₁ (0.15, 3.5), point SN₁ (0.17,

     2), point SO₁ (0.18,

     1), point SP₁ (0.19,

     0), point SQ₁ (0.2, −

0.7), point SR₁ (0.22, −

2), point SS₁ (0.25, −

3), and point ST₁ (0.3, −

5).

29. A spin-valve thin-film magnetic element according to claim 28, wherein the magnetic read track width Tw (μ

m) and the magnetostriction λ

s (×

10<sup>−

6</sup>), which are shown in accompanying FIG. 42 as point (Tw, λ

s), are within the range obtained by linking point SD₁ (0.25,

     18), point SE₁ (0.23,

     20), point SF₁ (0.2,

     20), point SG₁ (0.19,

     20), point SH₁ (0.18,

     20), point SI₁ (0.17,

     20), point SJ₁ (0.15,

     20), point SK₁ (0.1,

     20), point SL₁ (0.1,

     9), point SM₁ (0.15, 3.5), point SN₁ (0.17,

     2), point SO₁ (0.18,

     1), point SP₁ (0.19,

     0), point SQ₁ (0.2, −

0.7), point SR₁ (0.22, −

2), and point SS₁ (0.25, −

3).

30. A spin-valve thin-film magnetic element according to claim 29, wherein the magnetic read track width Tw (μ

m) and the magnetostriction λ

s (×

10<sup>−

6</sup>), which are shown in accompanying FIG. 42 as point (Tw, λ

s), are within the range obtained by linking point SF₁ (0.2,

     20), point SG₁ (0.19,

     20), point SH₁ (0.18,

     20), point SI₁ (0.17,

     20), point SJ₁ (0.15,

     20), point SK₁ (0.1,

     20), point SL₁ (0.1,

     9), point SM₁ (0.15, 3.5), point SN₁ (0.17,

     2), point SO₁ (0.18,

     1), point SP₁ (0.19,

     0), and point SQ₁ (0.2, −

0.7).

31. A spin-valve thin-film magnetic element according to claim 30, wherein the magnetic read track width Tw (μ

m) and the magnetostriction λ

s (×

10<sup>−

6</sup>), which are shown in accompanying FIG. 42 as point (Tw, λ

s), are within the range obtained by linking point SG₁ (0.19,

     20), point SH₁ (0.18,

     20), point SI₁ (0.17,

     20), point SJ₁ (0.15,

     20), point SK₁ (0.1,

     20), point SL₁ (0.1,

     9), point SM₁ (0.15, 3.5), point SN₁ (0.17,

     2), point SO₁ (0.18,

     1), and point SP₁ (0.19,

     0).

32. A spin-valve thin-film magnetic element according to claim 31, wherein the magnetic read track width Tw (μ

m) and the magnetostriction λ

s (×

10<sup>−

6</sup>), which are shown in accompanying FIG. 42 as point (Tw, λ

s), are within the range obtained by linking point SH₁ (0.18,

     20), point SI₁ (0.17,

     20), point SJ₁ (0.15,

     20), point SK₁ (0.1,

     20), point SL₁ (0.1,

     9), point SM₁ (0.15, 3.5), point SN₁ (0.17,

     2), and point SO₁ (0.18,

     1).

33. A spin-valve thin-film magnetic element according to claim 32, wherein the magnetic read track width Tw (μ

m) and the magnetostriction λ

s (×

10<sup>−

6</sup>), which are shown in accompanying FIG. 42 as point (Tw, λ

s), are within the range obtained by linking point SI₁ (0.17,

     20), point SJ₁ (0.15,

     20), point SK₁ (0.1,

     20), point SL₁ (0.1,

     9), point SM₁ (0.15, 3.5), and point SN₁ (0.17,

     2).

34. A spin-valve thin-film magnetic element according to claim 33, wherein the magnetic read track width Tw (μ

m) and the magnetostriction λ

s (×

10<sup>−

6</sup>), which are shown in accompanying FIG. 42 as point (Tw, λ

s), are within the range obtained by linking point SJ₁ (0.15,

     20), point SK₁ (0.1,

     20), point SL₁ (0.1,

     9), and point SM₁ (0.15, 3.5).

35. A spin-valve thin-film magnetic element according to claim 34, wherein the magnetic read track width Tw (μ

m) and the magnetostriction λ

s (×

10<sup>−

6</sup>), which are shown in accompanying FIG. 43 as point (Tw, λ

s), are within the range obtained by linking point SW₂ (0.13,

     20), point SK₂ (0.1,

     20), point SL₂ (0.1,

     9), and point SX₂ (0.13,

     5).

36. A spin-valve thin-film magnetic element according to claim 26, wherein the antiferromagnetic layer, the pinned magnetic layer, the nonmagnetic conductive layer, and the free magnetic layer are deposited in that order on the substrate.

37. A spin-valve thin-film magnetic element according to claim 26, wherein the antiferromagnetic layer comprises one of an X—

Mn alloy and a Pt—

Mn—

X′

alloy, where X is one element selected from the group consisting of Pt, Pd, Ir, Rh, Ru, and Os, and X′

is at least one element selected from the group consisting of Pd, Cr, Ru, Ni, Ir, Rh, Os, Au, Ag, Ne, Ar, Xe, and Kr.

38. A spin-valve thin-film magnetic element according to claim 26, wherein at least one of the pinned magnetic layer and the free magnetic layer is divided into two sublayers by a nonmagnetic intermediate layer to produce a ferrimagnetic state in which the magnetization directions of the sublayers are antiparallel to each other.

39. A thin-film magnetic head comprising a spin-valve thin-film magnetic element according to claim 26.

40. A spin-valve thin-film magnetic element comprising:

a substrate;

an antiferromagnetic layer;

a pinned magnetic layer in contact with the antiferromagnetic layer, the magnetization direction of the pinned magnetic layer being pinned by an exchange coupling magnetic field with the antiferromagnetic layer;

a free magnetic layer formed on the pinned magnetic layer with a nonmagnetic conductive layer therebetween, the magnetization direction of the free magnetic layer being aligned in a direction substantially orthogonal to the magnetization direction of the pinned magnetic layer;

a pair of hard bias layers for aligning the magnetization direction of the free magnetic layer in the direction substantially orthogonal to the magnetization direction of the pinned magnetic layer; and

a pair of electrode layers for applying a sensing current to the pinned magnetic layer, the nonmagnetic conductive layer, and the free magnetic layer,

wherein the magnetic read track width Tw (μ

m) and the magnetostriction λ

s (×

10<sup>−

6</sup>), which are shown in accompanying FIG. 43 as point (Tw, λ

s), are within the range obtained by linking point SA₂ (0.4,

     6), point SB₂ (0.35,

     6), point SC₂ (0.3, 7.5), point SD₂ (0.25, 10.5), point SE₂ (0.23,

     11), point SF₂ (0.22,

     12), point SG₂ (0.2, 13.5), point SH₂ (0.19, 14.2), point SI₂ (0.18, 15.1), point SJ₂ (0.15, 17.5), point SW₂ (0.13,

     20), point SK₂ (0.1,

     20), point SL₂ (0.1,

     9), point SX₂ (0.13,

     5), point SM₂ (0.15, 3.5), point SN₂ (0.18, 1.5), point SO₂ (0.19, 1.2), point SP₂ (0.2,

     1), point SQ₂ (0.22,

     0), point SR₂ (0.23, −

0.5), point SS₂ (0.25, −

1), point ST₂ (0.3, −

1.5), point SU₂ (0.35, −

1.6), and point SV₂ (0.4, −

1.5).

41. A spin-valve thin-film magnetic element according to claim 40, wherein the magnetic read track width Tw (μ

m) and the magnetostriction λ

s (×

10<sup>−

6</sup>), which are shown in accompanying FIG. 43 as point (Tw, λ

s), are within the range obtained by linking point SB₂ (0.35,

     6), point SC₂ (0.3, 7.5), point SD₂ (0.25, 10.5), point SE₂ (0.23,

     11), point SF₂ (0.22,

     12), point SG₂ (0.2, 13.5), point SH₂ (0.19, 14.2), point SI₂ (0.18, 15.1), point SJ₂ (0.15, 17.5), point SW₂ (0.13,

     20), point SK₂ (0.1,

     20), point SL₂ (0.1,

     9), point SX₂ (0.13,

     5), point SM₂ (0.15, 3.5), point SN₂ (0.18, 1.5), point SO₂ (0.19, 1.2), point SP₂ (0.2,

     1), point SQ₂ (0.22,

     0), point SR₂ (0.23, −

0.5), point SS₂ (0.25, −

1), point ST₂ (0.3, −

1.5), and point SU₂ (0.35, −

1.6).

42. A spin-valve thin-film magnetic element according to claim 41, wherein the magnetic read track width Tw (μ

m) and the magnetostriction λ

s (×

10<sup>−

6</sup>), which are shown in accompanying FIG. 43 as point (Tw, λ

s), are within the range obtained by linking point SC₂ (0.3, 7.5), point SD₂ (0.25, 10.5), point SE₂ (0.23,

     11), point SF₂ (0.22,

     12), point SG₂ (0.2, 13.5), point SH₂ (0.19, 14.2), point SI₂ (0.18, 15.1), point SJ₂ (0.15, 17.5), point SW₂ (0.13,

     20), point SK₂ (0.1,

     20), point SL₂ (0.1,

     9), point SX₂ (0.13,

     5), point SM₂ (0.15, 3.5), point SN₂ (0.18, 1.5), point SO₂ (0.19, 1.2), point SP₂ (0.2,

     1), point SQ₂ (0.22,

     0), point SR₂ (0.23, −

0.5), point SS₂ (0.25, −

1), and point ST₂ (0.3, −

1.5).

43. A spin-valve thin-film magnetic element according to claim 42, wherein the magnetic read track width Tw (μ

m) and the magnetostriction λ

s (×

10<sup>−

6</sup>), which are shown in accompanying FIG. 43 as point (Tw, λ

s), are within the range obtained by linking point SD₂ (0.25, 10.5), point SE₂ (0.23,

     11), point SF₂ (0.22,

     12), point SG₂ (0.2, 13.5), point SH₂ (0.19, 14.2), point SI₂ (0.18, 15.1), point SJ₂ (0.15, 17.5), point SW₂ (0.13,

     20), point SK₂ (0.1,

     20), point SL₂ (0.1,

     9), point SX₂ (0.13,

     5), point SM₂ (0.15, 3.5), point SN₂ (0.18, 1.5), point SO₂ (0.19, 1.2), point SP₂ (0.2,

     1), point SQ₂ (0.22,

     0), point SR₂ (0.23, −

0.5), and point SS₂ (0.25, −

1).

44. A spin-valve thin-film magnetic element according to claim 43, wherein the magnetic read track width Tw (μ

m) and the magnetostriction λ

s (×

10<sup>−

6</sup>), which are shown in accompanying FIG. 43 as point (Tw, λ

s), are within the range obtained by linking point SF₂ (0.22,

     12), point SG₂ (0.2, 13.5), point SH₂ (0.19, 14.2), point SI₂ (0.18, 15.1), point SJ₂ (0.15, 17.5), point SW₂ (0.13,

     20), point SK₂ (0.1,

     20), point SL₂ (0.1,

     9), point SX₂ (0.13,

     5), point SM₂ (0.15, 3.5), point SN₂ (0.18, 1.5), point SO₂ (0.19, 1.2), point SP₂ (0.2,

     1), and point SQ₂ (0.22,

     0).

45. A spin-valve thin-film magnetic element according to claim 44, wherein the magnetic read track width Tw (μ

m) and the magnetostriction λ

s (×

10<sup>−

6</sup>), which are shown in accompanying FIG. 43 as point (Tw, λ

s), are within the range obtained by linking point SG₂ (0.2, 13.5), point SH₂ (0.19, 14.2), point SI₂ (0.18, 15.1), point SJ₂ (0.15, 17.5), point SW₂ (0.13,

     20), point SK₂ (0.1,

     20), point SL₂ (0.1,

     9), point SX₂ (0.13,

     5), point SM₂ (0.15, 3.5), point SN₂ (0.18, 1.5), point SO₂ (0.19, 1.2), and point SP₂ (0.2,

     1).

46. A spin-valve thin-film magnetic element according to claim 45, wherein the magnetic read track width Tw (μ

m) and the magnetostriction λ

s (×

10<sup>−

6</sup>), which are shown in accompanying FIG. 43 as point (Tw, λ

s), are within the range obtained by linking point SH₂ (0.19, 14.2), point SI₂ (0.18, 15.1), point SJ₂ (0.15, 17.5), point SW₂ (0.13,

     20), point SK₂ (0.1,

     20), point SL₂ (0.1,

     9), point SX₂ (0.13,

     5), point SM₂ (0.15, 3.5), point SN₂ (0.18, 1.5), and point SO₂ (0.19, 1.2).

47. A spin-valve thin-film magnetic element according to claim 46, wherein the magnetic read track width Tw (μ

m) and the magnetostriction λ

s (×

10<sup>−

6</sup>), which are shown in accompanying FIG. 43 as point (Tw, λ

s), are within the range obtained by linking point SI₂ (0.18, 15.1), point SJ₂ (0.15, 17.5), point SW₂ (0.13,

     20), point SK₂ (0.1,

     20), point SL₂ (0.1,

     9), point SX₂ (0.13,

     5), point SM₂ (0.15, 3.5), and point SN₂ (0.18, 1.5).

48. A spin-valve thin-film magnetic element according to claim 47, wherein the magnetic read track width Tw (μ

m) and the magnetostriction λ

s (×

10<sup>−

6</sup>), which are shown in accompanying FIG. 43 as point (Tw, λ

s), are within the range obtained by linking point SJ₂ (0.15, 17.5), point SW₂ (0.13,

     20), point SK₂ (0.1,

     20), point SL₂ (0.1,

     9), point SX₂ (0.13,

     5), and point SM₂ (0.15, 3.5).