Vertical cavity apparatus with tunnel junction
First Claim
Patent Images
1. A vertical cavity apparatus, comprising:
- a first mirror;
substrate;
a second mirror coupled to the substrate, wherein at least a portion of one the first and second mirrors is a fiber with a grating;
at least a first and a second active region each positioned between the first and second mirrors, each of the first and second active regions being made of a material that upon application of electrical or electromagnetic energy the first and second regions become optically active; and
a first tunnel junction positioned between the first and second mirrors.
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Abstract
A vertical cavity apparatus includes first and second mirrors, a substrate and at least first and second active regions positioned between the first and second mirrors. At least one of the first and second mirrors is a fiber with a grating. At least a first tunnel junction is positioned between the first and second mirrors.
116 Citations
72 Claims
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1. A vertical cavity apparatus, comprising:
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a first mirror;
substrate;
a second mirror coupled to the substrate, wherein at least a portion of one the first and second mirrors is a fiber with a grating;
at least a first and a second active region each positioned between the first and second mirrors, each of the first and second active regions being made of a material that upon application of electrical or electromagnetic energy the first and second regions become optically active; and
a first tunnel junction positioned between the first and second mirrors. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 57, 58, 59, 60, 61, 62, 63, 64, 65, 66, 67)
at least a first oxide layer positioned between the first and second mirrors.
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3. The apparatus of claim 2, wherein the first oxide layer is positioned between the first mirror and the first active region.
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4. The apparatus of claim 2, wherein the first oxide layer is positioned between the second mirror and the second active region.
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5. The apparatus of claim 1, wherein the first tunnel junction is positioned between the first and second active regions.
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6. The apparatus of claim 1, wherein the substrate has a given crystallographic orientation.
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7. The apparatus of claim 1, wherein the first mirror includes a metallic layer.
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8. The apparatus of claim 1, wherein the substrate has a etched pattern formed on a top or a bottom surface.
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9. The apparatus of claim 1, wherein the substrate includes an epitaxy structure.
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10. The apparatus of claim 1, wherein the substrate includes a dielectric pattern for selective area epitaxy.
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11. The apparatus of claim 1, wherein substantially the entire apparatus is grown on a planar substrate with at least one layer grown while the planar substrate is held stationary and the other layers are grown while the planar substrate is rotated.
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12. The apparatus of claim 1, further comprising:
at least a first ion implantation layer positioned between the first and second mirrors.
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13. The apparatus of claim 1, further comprising:
at least a first etched layer positioned between the first and second mirrors.
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14. The apparatus of claim 1, wherein the top mirror is a lattice relaxed mirror.
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15. The apparatus of claim 1, wherein the top mirror is a lattice relaxed mirror and a DBR.
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16. The apparatus of claim 1, wherein the bottom mirror is a lattice relaxed mirror.
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17. The apparatus of claim 1, wherein the bottom mirror is a lattice relaxed mirror and a DBR.
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18. The apparatus of claim 1, wherein the top mirror is a dielectric mirror.
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19. The apparatus of claim 1, wherein the top mirror is a dielectric mirror and a DBR.
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20. The apparatus of claim 1, wherein the bottom mirror is a dielectric mirror.
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21. The apparatus of claim 1, wherein the bottom mirror is a dielectric mirror and a DBR.
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22. The apparatus of claim 1, wherein the top and bottom mirrors are each dielectric mirrors.
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23. The apparatus of claim 1, wherein the top and bottom mirrors are each dielectric mirrors and DBR'"'"'s.
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24. The apparatus of claim 1, wherein the top mirror is a fiber with a grating.
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25. The apparatus of claim 1, wherein the top mirror is a fiber with a grating and a DBR.
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26. The apparatus of claim 1, wherein the bottom mirror is a fiber with a grating.
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27. The apparatus of claim 1, wherein the bottom mirror is a fiber with a grating and a DBR.
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28. The apparatus of claim 1, wherein the top and bottom mirrors are each fibers with gratings.
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29. The apparatus of claim 1, wherein the top and bottom mirrors are each fibers with gratings and DBR'"'"'s.
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30. The apparatus of claim 1, wherein the first mirror is tunable.
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31. The apparatus of claim 1, wherein the first mirror includes a tunable filter.
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32. The apparatus of claim 1, further comprising:
a tunable filter coupled to the first mirror.
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33. The apparatus of claim 1, wherein the tunnel junction has first and second opposing sides that are made of the same material.
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34. The apparatus of claim 1, wherein the tunnel junction has first and second opposing sides that are made of different materials.
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35. The apparatus of claim 1, wherein the tunnel junction has first and second opposing sides each having a different thickness.
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36. The apparatus of claim 1, wherein the tunnel junction has first and second opposing sides each having a different doping profile.
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37. The apparatus of claim 1, wherein the tunnel junction is substantially uniformly doped.
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38. The apparatus of claim 1, wherein the tunnel junction is non-uniformly doped.
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39. The apparatus of claim 1, wherein the tunnel junction is a compositionally graded tunnel junction.
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40. The apparatus of claim 1, wherein the first active region includes a first quantum well.
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41. The apparatus of claim 1, wherein the first active region includes a plurality of first quantum wells.
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42. The apparatus of claim 46, wherein at least a portion of the plurality of first quantum wells have different widths.
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43. The apparatus of claim 41, wherein at least a portion of the plurality of first quantum wells have the same widths.
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44. The apparatus of claim 41, wherein at least a portion of the plurality of first quantum wells have different maximum gain wavelength.
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45. The apparatus of claim 41, wherein at least a portion of the plurality of first quantum wells have the same maximum gain wavelength.
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46. The apparatus of claim 41, wherein at least a portion of individual quantum wells of the plurality of first quantum wells have different compositions.
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47. The apparatus of claim 41, wherein at least a portion of individual quantum wells of the plurality of first quantum wells have the same composition.
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48. The apparatus of claim 41, wherein at least a portion of individual quantum wells of the plurality of first quantum wells have the same strain.
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49. The apparatus of claim 41, wherein at least a portion of individual quantum wells of the plurality of first quantum wells have different strain.
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50. The apparatus of claim 41, wherein the plurality of first quantum wells has a plurality of barriers and at least a portion of barriers in the plurality have the same strain.
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51. The apparatus of claim 41, wherein the plurality of first quantum wells has a plurality of barriers and at least a portion of barriers in the plurality have different strains.
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52. The apparatus of claim 41, wherein the plurality of first quantum wells has a plurality of barriers and at least a portion of barriers in the plurality are unstrained.
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53. The apparatus of claim 1, wherein the first active region includes a first bulk region.
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54. The apparatus of claim 53, wherein the second active region includes a second bulk region.
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55. The apparatus of claim 54, wherein at least one of the first and second bulk regions is non-doped.
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56. The apparatus of claim 54, wherein at least one of the first and second bulk regions is substantially uniformly doped.
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57. The apparatus of claim 54, wherein at least one of the first and second bulk regions is non-uniformly doped.
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58. The apparatus of claim 54, wherein at least one of the first and second bulk regions has first and second opposing sides that are made of the same material.
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59. The apparatus of claim 54, wherein at least one of the first and second bulk regions has first and second opposing sides that are made of different materials.
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60. The apparatus of claim 54, wherein at least one of the first and second bulk regions has first and second opposing sides each having a different thickness.
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61. The apparatus of claim 54, wherein at least one of the first and second bulk regions has first and second opposing sides each having a different doping profile.
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62. The apparatus of claim 54, wherein at least one of the first and second bulk regions is compositionally graded.
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63. The apparatus of claim 54, wherein a width of the first bulk region is different from a width of the second bulk region.
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64. The apparatus of claim 39, further comprising:
a first partial DBR positioned between the first and second active regions.
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65. The apparatus of claim 1, wherein the first and second mirrors are each DBRs.
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66. The apparatus of claim 39, further comprising:
a third active region positioned between the second active region and the second mirror.
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67. The apparatus of claim 66, further comprising:
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a first partial DBR positioned between the first tunnel junction and the second active region; and
a second partial DBR positioned between the second tunnel junction and the third active region.
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68. A vertical cavity surface emitting laser, comprising:
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a first mirror;
a substrate;
a second mirror coupled to the substrate, wherein at least a portion of one the first and second mirrors is a fiber with a grating;
at least a first and a second active region each positioned between the first and second mirrors, each of the first and second active regions being made of a material that upon application of electrical or electromagnetic energy the first and second regions become optically active; and
a first tunnel junction positioned between the first and second mirrors.
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69. A detector, comprising:
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a first mirror;
a substrate;
second mirror coupled to the substrate, wherein at least a portion of one the first and second mirrors is a fiber with a grating;
at least a first and a second active region each positioned between the first and second mirrors, each of the first and second active regions being made of a material that upon application of electrical or electromagnetic energy the first and second regions become optically active; and
a first tunnel junction positioned between the first and second mirrors.
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70. A modulator, comprising:
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a first mirror;
a substrate;
a second mirror coupled to the substrate, wherein at least a portion of one the first and second mirrors is a fiber with a grating;
at least a first and a second active region each positioned between the first and second mirrors, each of the first and second active regions being made of a material that upon application of electrical or electromagnetic energy the first and second regions become optically active; and
a first tunnel junction positioned between the first and second mirrors.
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71. An attenuator, comprising:
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a first mirror;
a substrate;
a second mirror coupled to the substrate, wherein at least a portion of one the first and second mirrors is a fiber with a grating;
at least a first and a second active region each positioned between the first and second mirrors, each of the first and second active regions being made of a material that upon application of electrical or electromagnetic energy the first and second regions become optically active; and
a first tunnel junction positioned between the first and second mirrors.
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72. An amplifier, comprising:
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a first mirror;
a substrate;
a second mirror coupled to the substrate, wherein at least a portion of one the first and second mirrors is a fiber with a grating;
at least a first and a second active region each positioned between the first and second mirrors, each of the first and second active regions being made of a material that upon application of electrical or electromagnetic energy the first and second regions become optically active; and
a first tunnel junction positioned between the first and second mirrors.
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Specification