Chip structure and process for forming the same
First Claim
1. The process for fabricating a chip structure, comprising:
- Step 1;
providing a wafer having a plurality of electric devices, an interconnection scheme and a passivation layer, the interconnection scheme electrically connected to the electric devices, the passivation layer covering the electric devices and the interconnection scheme;
Step 2;
forming a dielectric sub-layer over the passivation layer of the wafer, the dielectric sub-layer having at least one opening passing through the dielectric sub-layer;
Step 3;
forming at least one conductive metal over the dielectric sub-layer and into the opening; and
Step 4;
removing the conductive metal formed outside the opening.
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Accused Products
Abstract
A chip structure comprises a substrate, a first built-up layer, a passivation layer and a second built-up layer. The substrate includes many electric devices placed on a surface of the substrate. The first built-up layer is located on the substrate. The first built-up layer is provided with a first dielectric body and a first interconnection scheme, wherein the first interconnection scheme interlaces inside the first dielectric body and is electrically connected to the electric devices. The first interconnection scheme is constructed from first metal layers and plugs, wherein the neighboring first metal layers are electrically connected through the plugs. The passivation layer is disposed on the first built-up layer and is provided with openings exposing the first interconnection scheme. The second built-up layer is formed on the passivation layer. The second built-up layer is provided with a second dielectric body and a second interconnection scheme, wherein the second interconnection scheme interlaces inside the second dielectric body and is electrically connected to the first interconnection scheme. The second interconnection scheme is constructed from at least one second metal layer and at least one via metal filler, wherein the second metal layer is electrically connected to the via metal filler. The thickness, width, and cross-sectional area of the traces of the second metal layer are respectively larger than those of the first metal layers.
95 Citations
34 Claims
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1. The process for fabricating a chip structure, comprising:
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Step 1;
providing a wafer having a plurality of electric devices, an interconnection scheme and a passivation layer, the interconnection scheme electrically connected to the electric devices, the passivation layer covering the electric devices and the interconnection scheme;
Step 2;
forming a dielectric sub-layer over the passivation layer of the wafer, the dielectric sub-layer having at least one opening passing through the dielectric sub-layer;
Step 3;
forming at least one conductive metal over the dielectric sub-layer and into the opening; and
Step 4;
removing the conductive metal formed outside the opening.- View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. The process for fabricating a chip structure, comprising:
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Step 1;
providing a wafer having a plurality of electric devices, an interconnection scheme and a passivation layer, the interconnection scheme electrically connected to the electric devices, the passivation layer covering the electric devices and the interconnection scheme;
Step 2;
forming a first dielectric sub-layer over the passivation layer of the wafer, the first dielectric sub-layer having at least one via metal opening passing through the first dielectric sub-layer;
Step 3;
forming a first conductive layer onto the first dielectric sub-layer and into the via metal opening;
Step 4;
forming at least one first conductive metal over the first conductive layer;
Step 5;
removing the first conductive layer and the first conductive metal that are formed outside the via metal opening;
Step 6;
forming a second dielectric sub-layer onto the first dielectric sub-layer, the second dielectric sub-layer having at least one metal-layer opening passing through the second dielectric sub-layer, the metal-layer opening exposing the first conductive metal formed in the via metal opening;
Step 7;
forming a second conductive layer onto the second dielectric sub-layer and into the metal-layer opening;
Step 8;
forming at least one second conductive metal over the second conductive layer; and
Step 9;
removing the second conductive layer and the second conductive metal that are formed outside the metal-layer opening.- View Dependent Claims (14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30)
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31. A process for fabricating a chip structure, comprising:
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Step 1;
providing a wafer having a plurality of electric devices, an interconnection scheme and a passivation layer, the interconnection scheme electrically connected to the electric devices, the passivation layer covering the electric devices and the interconnection scheme, the passivation layer having at least one opening exposing the interconnection scheme;
Step 2;
forming a dielectric sub-layer onto the passivation layer, the dielectric layer having at least one metal-layer opening passing through the dielectric sub-layer, the metal-layer opening exposing the opening of the passivation layer;
Step 3;
forming at least one conductive metal into the opening of the passivation layer, into the metal-layer opening and onto the dielectric sub-layer; and
Step 4;
removing the conductive metal that is formed outside the metal-layer opening and the opening of the passivation layer.- View Dependent Claims (32, 33, 34)
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Specification