Etch process for dielectric materials comprising oxidized organo silane materials
First Claim
1. A method of plasma etching C-doped silicon oxide, the method comprising:
- etching the C-doped silicon oxide inside an etch reactor employing plasma conditions including (1) flowing CH2F2 gas and inert gas into the reactor and (2) a reactor bias energy no greater than about 400 W.
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Abstract
The present invention provides a novel etching technique for etching a layer of C-doped silicon oxide, such as a partially oxidized organo silane material. This technique, employing CH2F2/Ar chemistry at low bias and low to intermediate pressure, provides high etch selectivity to silicon oxide and improved selectivity to organic photoresist. Structures including a layer of partially oxidized organo silane material (1004) deposited on a layer of silicon oxide (1002) were etched according to the novel technique, forming relatively narrow trenches (1010, 1012, 1014, 1016, 1030, 1032, 1034 and 1036) and wider trenches (1020, 1022, 1040 and 1042). The technique is also suitable for forming dual damascene structures (1152, 1154 and 1156). In additional embodiments, manufacturing systems (1410) are provided for fabricating IC structures of the present invention. These systems include a controller (1400) that is adapted for interacting with a plurality of fabricating stations (1420, 1422, 1424, 1426 and 1428).
339 Citations
28 Claims
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1. A method of plasma etching C-doped silicon oxide, the method comprising:
- etching the C-doped silicon oxide inside an etch reactor employing plasma conditions including (1) flowing CH2F2 gas and inert gas into the reactor and (2) a reactor bias energy no greater than about 400 W.
- View Dependent Claims (3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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2. A method of plasma etching an etch pattern through a layer of C-doped silicon oxide, the method comprising:
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a) depositing a photoresist layer on the C-doped silicon oxide layer;
b) forming an etch mask having the etch pattern in the photoresist layer;
c) etching the pattern through the C-doped silicon oxide layer inside an etch reactor, wherein etching the pattern comprises employing plasma conditions including (1) CH2F2 gas flowing into the reactor at a first predetermined flow rate, (2) inert gas flowing into the reactor at a second predetermined flow rate and (3) a reactor bias energy no greater than about 400 W.
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15. A method of anisotropically plasma etching an etch pattern through a layer of C-doped silicon oxide of a first structure that is fabricated by depositing the C-doped silicon oxide layer on a layer of silicon oxide, the method comprising:
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a) depositing a photoresist layer on the C-doped silicon oxide layer of the first structure;
b) forming an etch mask having the etch pattern in the photoresist layer;
c) positioning the first structure having the etch mask inside an etch reactor;
d) exposing the C-doped silicon oxide layer to a plasma including ;
(1) CH2F2 gas flowing into the reactor at a first predetermined flow rate, (2) inert gas flowing into the reactor at a second predetermined flow rate and (3) a reactor bias energy no greater than about 400 W; and
e) continuing exposing to the plasma until the pattern has been etched through the C-doped silicon oxide layer wherein a second structure is formed having a cavity in the C-doped silicon oxide layer such that the cavity exposes the silicon oxide layer as defined by the etch pattern. - View Dependent Claims (16, 17, 18, 19, 20, 21, 22)
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23. A method of plasma etching a trench and a via in a first structure having a substrate upon which are sequentially formed a silicon oxide layer and a C-doped silicon oxide layer, the method comprising:
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a) depositing a first photoresist layer on the C-doped silicon oxide layer;
b) forming a first etch mask having an via pattern in the first photoresist layer;
c) anisotropically etching the via pattern through the C-doped silicon oxide layer and the silicon oxide layer, forming a cavity that exposes the substrate;
d) removing the first photoresist, wherein a second structure is formed;
e) forming a second photoresist layer on the second structure, wherein the second photoresist layer includes a second etch mask having a trench pattern that overlays the cavity;
f) anisotropically etching the trench pattern through the C-doped silicon oxide layer forming a trench exposing the underlying via and the underlying silicon oxide layer, wherein etching the trench pattern comprises etching with a plasma including;
(1) CH2F2 gas flowing at a first predetermined flow rate, (2) inert gas flowing at a second predetermined flow rate and (3) plasma conditions comprising (i) a bias energy no greater than about 400 W; and
g) removing the second photoresist, wherein a third structure is formed that is adapted for forming a dual damascene structure therein. - View Dependent Claims (24, 25)
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26. A method of forming a structure on a substrate, the method comprising:
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a) depositing a silicon nitride layer on the substrate;
b) depositing a first adhesive layer on the silicon nitride layer;
c) depositing a silicon oxide layer on the first adhesive layer;
d) depositing a second adhesive layer on the silicon oxide layer;
e) depositing a layer of C-doped silicon oxide on the second adhesive layer;
f) depositing a first photoresist layer on the C-doped silicon oxide layer;
g) developing a via etch pattern in the photoresist layer;
h) anisotropically etching the via etch pattern such that a hole is formed that exposes the silicon nitride layer;
i) removing the first photoresist;
j) depositing a second photoresist layer on the material layer;
k) developing a trench pattern in the second photoresist layer such that the trench pattern overlays the hole;
l) anisotropically etching the trench pattern through the C-doped silicon oxide layer and the second adhesive layer, comprising employing a plasma including (1) a gas mixture comprising CH2F2 and inert gas and (2) plasma conditions including (i) a bias energy range of about 250 to about 500 W and (ii) a pressure range of about 10 mT to about 90 mT, wherein a trench is formed overlaying a via and the silicon oxide layer. - View Dependent Claims (27, 28)
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Specification