Metal-assisted chemical etch to produce porous group III-V materials
First Claim
1. A method for producing porous Group III-V material, the method comprising steps of:
- depositing a thin discontinuous layer of metal on a Group III-V material surface;
forming the porous Group III-V material by etching the Group III-V material surface in a HF and oxidant solution, said etching being conducted without external electrical bias.
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Accused Products
Abstract
A thin discontinuous layer of metal such as Au, Pt, or Au/Pd is deposited on a Group III-V material surface. The surface is then etched in a solution including HF and an oxidant for a preferably brief period, as little as a couple seconds to one hour. A preferred oxidant is H2O2. Morphology and light emitting properties of porous Group III-V material can be selectively controlled as a function of the type of metal deposited, doping type, doping level, metal thickness, whether emission is collected on or off the metal coated areas and/or etch time. Electrical assistance is unnecessary during the chemical etching of the invention, which may be conducted in the presence or absence of illumination.
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Citations
23 Claims
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1. A method for producing porous Group III-V material, the method comprising steps of:
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depositing a thin discontinuous layer of metal on a Group III-V material surface;
forming the porous Group III-V material by etching the Group III-V material surface in a HF and oxidant solution, said etching being conducted without external electrical bias. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method for producing porous Group III-V material, the method consisting of the following steps:
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depositing a thin discontinuous layer of metal on a Group III-V material surface;
forming the porous Group III-V material by etching the Group III-V material surface in a HF and oxidant solution for a period of about two seconds up to 60 minutes. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20, 21, 22)
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23. A method for producing porous Group III-V material, the method comprising steps of:
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depositing metal on a Group III-V material surface in a thickness sufficient to permit nucleation that forms nanometer size metal particles and small enough to prevent formation of a continuous metal layer;
forming the porous Group III-V material by etching the Group III-V material surface in a HF and oxidant solution for a period of about two seconds up to 60 minutes, said etching being conducted without external electrical bias.
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Specification