Semiconductor device with boron containing carbon doped silicon oxide layer

• US 6,762,435 B2
• Filed: 06/09/2003
• Issued: 07/13/2004
• Est. Priority Date: 11/20/2000
• Status: Active Grant

• Current Assignee: Intel Corporation
• Original Assignee: Intel Corporation
• Inventors: Towle, Steven N.
• Primary Examiner(s): TURNER, ARCHENE A
• Application Number:
  US10/458,003
• Publication Number:
  US 20030211325A1
• Time in Patent Office: 400 Days
• Field of Search: 257/77, 257/76, 428/408, 428/446, 428/704, 428/698
• US Class Current: 257/76
• CPC Class Codes: C23C 16/401 containing silicon
• CPC Class Codes: Y10T 428/24917 including metal layer
• CPC Class Codes: Y10T 428/30 Self-sustaining carbon mass or layer with impregnant or other layer

Abstract

A method of forming a carbon doped oxide layer on a substrate is described. That method comprises introducing into a chemical vapor deposition apparatus a source of carbon, silicon, boron, and oxygen. That apparatus is then operated under conditions that cause a boron containing carbon doped oxide layer to form on the substrate.

Claims

1. A semiconductor device comprising:

a substrate covered by a boron containing carbon doped silicon oxide layer, the boron containing carbon doped silicon oxide layer consisting essentially of silicon, oxygen, hydrogen, and between about 5 and about 15 atom % boron and between about 20 and about 35 atom % carbon, exclusive of hydrogen content;

wherein the boron containing carbon doped silicon oxide layer has a dielectric constant that is less than about 2.8 and is used as an insulating layer between metal lines.

2. A semiconductor device comprising a boron containing carbon doped silicon oxide layer that is made by:

introducing into a chemical vapor deposition apparatus a first gas that comprises an alkyl oxysilane and a second gas that comprises a source of boron;

then

operating the apparatus under conditions that cause a boron containing carbon doped silicon oxide layer to form on a substrate,

wherein the ratio of the first gas to the second gas, as introduced into the chemical vapor deposition apparatus, ensures that the resulting boron containing carbon doped silicon oxide layer contains between about 5 and about 15 atom % boron and between about 20 and about 35 atom % carbon, exclusive of hydrogen content.