×

MOSFET with SiGe source/drain regions and epitaxial gate dielectric

  • US 6,762,463 B2
  • Filed: 06/09/2001
  • Issued: 07/13/2004
  • Est. Priority Date: 06/09/2001
  • Status: Expired due to Term
First Claim
Patent Images

1. A semiconductor device formed on a substrate and comprising:

  • a well, said well comprising two silicon germanium filled spaces and a remaining portion, said remaining portion of said well not comprising silicon germanium;

    a channel region of first conductivity type and being in the well;

    a dielectric layer overlying the channel region; and

    a gate electrode overlying the dielectric layer;

    wherein said two silicon germanium filled spaces comprise respective source/drain regions of second conductivity type, said respective source/drain regions being situated on opposite sides of the channel region.

View all claims
  • 2 Assignments
Timeline View
Assignment View
    ×
    ×