Fingerprint sensor having a portion of the fluorocarbon polymer physical interface layer amorphized

• US 6,762,470 B2
• Filed: 11/30/2001
• Issued: 07/13/2004
• Est. Priority Date: 11/30/2001
• Status: Expired due to Term

• Current Assignee: STMicroelectronics Incorporated (STMicroelectronics NV)
• Original Assignee: STMicroelectronics Incorporated (STMicroelectronics NV)
• Inventors: Lane, Fred P., Siegel, Harry M.
• Primary Examiner(s): Pham, Long
• Assistant Examiner(s): MAI, ANH D
• Application Number:
  US09/998,868
• Publication Number:
  US 20030102533A1
• Time in Patent Office: 956 Days
• Field of Search: 257/642, 257/414, 382/124
• US Class Current: 257/414
• CPC Class Codes: G06V 40/1329 Protecting the fingerprint sensor against damage caused by the finger

Abstract

A touch-sensitive semiconductor chip having a physical interface to the environment, where the surface of the physical interface is coated with a fluorocarbon polymer. The polymer is highly scratch resistant and has a characteristic low dielectric constant for providing a low attenuation to electric fields. The polymer can be used instead of conventional passivation layers, thereby allowing a thin, low dielectric constant layer between the object touching the physical interface, and the capacitive sensing circuits underlying the polymer.

Claims

1. A semiconductor fingerprint sensor device having a physical interface for allowing an external physical stimulus to be input to the semiconductor device, comprising:

a conductor structure formed with said semiconductor device, said conductor structure functioning to provide an electric field;

a fluorocarbon polymer layer having an amorphous portion, said layer overlying said conductor structure, said layer functioning as a dielectric layer and as said physical interface; and

sensing circuits coupled to said conductor structure for sensing changes in the electric field when said external physical stimulus reacts with said physical interface.

2. The semiconductor fingerprint sensor device of claim 1, wherein said fluorocarbon polymer layer has a dielectric constant in the range of about 1.89 to 1.93.

3. The semiconductor fingerprint sensor device of claim 1, wherein said fluorocarbon polymer layer has a thickness between about 8 microns and 25 microns.

4. The semiconductor fingerprint sensor device of claim 1, wherein said physical interface has an area sufficient for application thereto of a fingerprint of a person.

5. The semiconductor fingerprint sensor device of claim 1, wherein said conductor structure defines a pixel, and further including a plurality of pixels covered by said fluorocarbon polymer layer.

6. The semiconductor fingerprint sensor device of claim 1, further including a silicon-based passivation layer of material covered by said fluorocarbon polymer layer.

7. The semiconductor fingerprint sensor device of claim 6, wherein said silicon-base passivation layer comprises silicon nitride.

8. The semiconductor fingerprint sensor device of claim 6, wherein said silicon-based passivation layer comprises silicon carbide.

9. The semiconductor fingerprint sensor device of claim 6, wherein said silicon-based passivation layer comprises silicon carbide atop silicon nitride.