Ultra thin back-illuminated photodiode array structures and fabrication methods

• US 6,762,473 B1
• Filed: 06/25/2003
• Issued: 07/13/2004
• Est. Priority Date: 06/25/2003
• Status: Expired due to Fees

• Current Assignee: Array Optronix, Inc.
• Original Assignee: Semicoa Semiconductors
• Inventors: Goushcha, Alexander O., Metzler, Richard A., Hicks, Chris, Tulbure, Dan, Kalatsky, Mark, Bartley, Eddie
• Primary Examiner(s): Mulpuri, Savitri
• Application Number:
  US10/606,053
• Time in Patent Office: 384 Days
• Field of Search: 250/214.1, 250/370.11, 257/443-448, 257/460-465, 257/88-89
• US Class Current: 257/443
• CPC Class Codes: H01L 27/1446 in a repetitive configuration
• CPC Class Codes: H01L 27/1464 Back illuminated imager structures

Abstract

Ultra thin back-illuminated photodiode array structures and fabrication methods. The photodiode arrays are back illuminated photodiode arrays having a substrate of a first conductivity type having first and second surfaces, the second surface having a layer of the first conductivity type having a greater conductivity than the substrate. The arrays also have a matrix of regions of a first conductivity type of a higher conductivity than the substrate extending from the first surface of the substrate to the layer of the first conductivity type having a greater conductivity than the substrate, a plurality of regions of the second conductivity type interspersed within the matrix of regions of the first conductivity type and not extending to the layer of the first conductivity type on the second surface of the substrate, and a plurality of contacts on the first surface for making electrical contact to the matrix of regions of the first conductivity type and the plurality of regions of the second conductivity type.

Claims

1. A back illuminated photodiode array comprising:

a substrate of a first conductivity type having first and second surfaces;

the second surface having a layer of the first conductivity type having a greater conductivity than the substrate;

a matrix of regions of a first conductivity type of a higher conductivity than the substrate extending from the first surface of the substrate to the layer of the first conductivity type having a greater conductivity than the substrate, wherein the entire matrix regions are semiconductor doped regions;

a plurality of regions of the second conductivity type interspersed within the matrix of regions of the first conductivity type and not extending to the layer of the first conductivity type on the second surface of the substrate; and

,

a plurality of contacts on the first surface for making electrical contact to the matrix of regions of the first conductivity type and the plurality of regions of the second conductivity type to result back illuminated photodiode array.

2. The photodiode array of claim 1 wherein the plurality of regions of the second conductivity type are separated from the second surface of the substrate by an amount that approximately equals the depletion depth for the substrate at zero bias.

3. The photodiode array of claim 1 wherein the plurality of regions of the second conductivity type are separated from the second surface of the substrate by approximately 9 μ

m.

4. The photodiode array of claim 2 wherein the substrate is an n-type silicon substrate having a resistivity of approximately 400 ohm-cm.

5. The photodiode array of claim 1 wherein the plurality of contacts are a plurality of ball grid contacts.

6. The photodiode array of claim 5 wherein the plurality of contacts are of substantially equal size evenly distributed across the photodiode array.

7. The photodiode array of claim 1 wherein the matrix of regions of a first conductivity type comprise a rectangular matrix defining an X-Y matrix of square regions, each square region containing a respective one of the plurality of regions of the second conductivity type.

8. The photodiode array of claim 7 wherein doping forming the matrix of regions of a first conductivity type and the plurality of regions of the second conductivity type overlap.

9. The photodiode array of claim 1 wherein the substrate has a thickness of less than approximately 50 μ

m.

10. The photodiode array of claim 1 wherein the substrate has a thickness of approximately 30 μ

m.

11. The photodiode array of claim 1 wherein the substrate is a silicon substrate.

12. A back illuminated photodiode array comprising:

a substrate of a first conductivity type having first and second surfaces and a thickness of less than approximately 50 μ

m;

the second surface having a layer of the first conductivity type having a greater conductivity than the substrate;

a rectangular matrix of regions of a first conductivity type of a higher conductivity than the substrate extending from the first surface of the substrate to the layer of the first conductivity type on the second surface of the substrate, the rectangular matrix defining an X-Y matrix of rectangular regions, wherein rectangular matrix of regions are semiconductor doped regions;

a plurality of regions of the second conductivity type interspersed within the matrix of regions of the first conductivity type, each region of the second conductivity type being within a respective square region defined by the rectangular matrix of regions of a first conductivity type; and

,

a plurality of contacts on the first surface for making electrical contact to the matrix of regions of the first conductivity type and the plurality of regions of the second conductivity type to result back illuminated photodiode array.

13. The photodiode array of claim 12 wherein the plurality of regions of the second conductivity type are separated from the second surface of the substrate by an amount that approximately equals the depletion depth for the substrate at zero bias.

14. The photodiode array of claim 13 wherein the plurality of regions of the second conductivity type are separated from the second surface of the substrate by approximately 9 μ

m.

15. The photodiode array of claim 13 wherein the substrate is an n-type silicon substrate having a resistivity of approximately 400 ohm-cm.

16. The photodiode array of claim 12 wherein the plurality of contacts are a plurality of ball grid contacts.

17. The photodiode array of claim 16 wherein the plurality of contacts are of substantially equal size substantially evenly distributed across the photodiode array.

18. The photodiode array of claim 12 wherein doping forming the matrix of regions of a first conductivity type and the plurality of regions of the second conductivity type overlap.

19. The photodiode array of claim 12 wherein the substrate has a thickness of approximately 30 μ

m.

20. The photodiode array of claim 12 wherein the substrate is a silicon substrate.