Method for in-situ film thickness measurement and its use for in-situ control of deposited film thickness
First Claim
1. A method for measuring film thickness on a substrate in a processing chamber both in real-time and in-situ comprising:
- providing a processing chamber having roughened internal surfaces;
emitting a radiation within said processing chamber, said radiation directed toward and contacting a wafer surface having a film being processed thereon;
said radiation reflecting off said wafer surface and directing toward and contacting said roughened internal surfaces;
said reflected radiation diffusely reflecting off said roughened internal surfaces; and
collecting said radiation diffusely reflected off said roughened internal surfaces to measure a thickness of said film being processed thereon said wafer surface.
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Accused Products
Abstract
A method and system for real-time, in-situ measurement of a film being deposited onto a surface of a wafer in a tool during semiconductor, optical component and electro-optic component processing and manufacturing. The method and system include real-time, in-situ detecting and analyzing radiation within the tool which is reflected off a wafer surface and subsequently diffusely reflected off internal roughened surfaces of the processing chamber. The emitted radiation may be derived from the plasma within the chamber, or alternatively, an external energy source. In detecting and analyzing the radiation reflected off the internal surfaces of the processing tool, the instant method and system monitors the deposition process of the film and automatically controls the deposition of such film in response to the measurements taken.
39 Citations
36 Claims
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1. A method for measuring film thickness on a substrate in a processing chamber both in real-time and in-situ comprising:
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providing a processing chamber having roughened internal surfaces;
emitting a radiation within said processing chamber, said radiation directed toward and contacting a wafer surface having a film being processed thereon;
said radiation reflecting off said wafer surface and directing toward and contacting said roughened internal surfaces;
said reflected radiation diffusely reflecting off said roughened internal surfaces; and
collecting said radiation diffusely reflected off said roughened internal surfaces to measure a thickness of said film being processed thereon said wafer surface. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method for measuring deposited film thickness on a substrate in a deposition chamber both in real-time and in-situ comprising:
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providing a processing chamber having roughened internal surfaces;
providing at least one optical view port at any location along a perimeter of said processing chamber;
providing a radiation source;
emitting a radiation within said processing chamber from said radiation source, said radiation directed toward and contacting a wafer surface having a film being deposited thereon;
said radiation reflecting off said wafer surface and directing toward and contacting said roughened internal surfaces;
said radiation diffusely reflecting off said roughened internal surfaces;
collecting said radiation diffusely reflected off said roughened internal surfaces using said at least one optical view port; and
analyzing a thickness of said film across said wafer surface based on said collected diffuse radiation. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26)
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27. A processing chamber for measuring film thickness on a substrate in real-time and in-situ comprising:
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a chamber body;
roughened internal surfaces of said chamber body;
at least one optical view port located at any location along a perimeter of said chamber body; and
a radiation source, wherein radiation is emitted from said radiation source, reflected off a wafer surface and secondarily and diffusely reflected off said roughened internal surfaces of said chamber body whereby said diffusely reflected radiation is collected by said at least one optical view port to measure a thickness of a film across said wafer surface. - View Dependent Claims (28, 29, 30, 31, 32, 33, 34, 35, 36)
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Specification