Low noise bandgap references

• US 6,765,431 B1
• Filed: 10/15/2002
• Issued: 07/20/2004
• Est. Priority Date: 10/15/2002
• Status: Expired due to Term

• Current Assignee: Murata Manufacturing Co Limited
• Original Assignee: Maxim Integrated Products, Inc. (Analog Devices, Inc.)
• Inventors: Coady, Edmond Patrick
• Primary Examiner(s): Cunningham, Terry D.
• Application Number:
  US10/270,865
• Time in Patent Office: 644 Days
• Field of Search: 327/539, 327/65, 327/89, 327/563, 323/313
• US Class Current: 327/539
• CPC Class Codes: G05F 3/30 Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities G05F3/26 takes precedence

Abstract

Low noise bandgap references of the type providing a temperature independent output by balancing the proportional to absolute temperature dependence of the difference in base-emitter voltages of two transistors operating at different current densities with the negative temperature coefficient of the base-emitter voltage of a transistor. The bandgap references disclosed reduce the noise characteristic of such references by balancing the difference in base-emitter voltages of a first number of pairs of transistors, each pair having two transistors operating at different current densities, with the negative temperature coefficient of the base-emitter voltage of a second number of transistors, the second number being less than the first number. Various embodiments are disclosed, including embodiments having an output corresponding to the bandgap of the transistor material, and multiples of the bandgap of the transistor material.

Claims

1. A reference having a bandgap reference output and a bandgap reference ground connection comprising:

first, second, third and fourth transistors, each having an emitter, a base and a collector;

the first and second transistors each being diode connected;

the third and fourth transistors having a common emitter connection;

a resistor in series with the second transistor;

the first transistor and the series combination of the second transistor and the resistor each being resistively biased between the bandgap reference output and the bandgap reference ground connection in relation to the relative sizes of the first and second transistors to operate the first transistor at a higher current density than the second transistor;

the bases of the fourth and third transistors being coupled to be responsive to the difference in voltage across the first transistor and the series combination of the second transistor and the resistor, respectively, the third and fourth transistors each being resistively biased in relation to the relative sizes of the third and fourth transistors to operate the third transistor at a higher current density than the fourth transistor;

the resistor and the first, second, third and fourth transistors being coupled to define a closed loop comprising the resistor, the difference in the base emitter voltages of the first and second transistors and the difference in the base emitter voltages of the third and fourth transistors; and

,

an amplifier having a differential input responsive to the difference in the voltages across the resistive biasing of the third and fourth transistors, and an output coupled to the bandgap reference output.

2. The reference of claim 1 wherein the third and fourth transistors are each resistively biased between the bandgap reference output and the bandgap reference ground connection.

3. The reference of claim 1 wherein the second and fourth transistors are larger than the first and third transistors, respectively.

4. The reference of claim 1 where the first and second transistors are of the same conductivity type as the third and forth transistors.

5. The reference of claim 1 where the first and second transistors are a different conductivity type than the third and forth transistors.

6. The reference of claim 1 wherein the third and fourth transistors are biased to operate at a lower current than the first and second transistors, respectively.

7. The reference of claim 1 wherein the second transistor is selectively resistively biased relative to the resistance of the resistor to result in a bandgap voltage output that is insensitive to temperature.

8. A reference having a bandgap reference output and a bandgap reference ground connection comprising:

first, second, third and fourth transistors, each having an emitter, a base and a collector;

the first and second transistors each being diode connected;

the third and fourth transistors being connected as a differential pair having a common emitter connection;

a resistor in series with the second transistor;

the first transistor and the series combination of the second transistor and the first resistor each being resistively biased between the bandgap reference output and the bandgap reference ground connection to operate the first transistor at a higher current density than the second transistor,

the third and fourth transistors each being resistively biased to operate the third transistor at a higher current density than the fourth transistor;

the difference between the voltage across the first transistor and the voltage across the series combination of the first transistor and the resistor being coupled to the bases of the fourth and the third transistors as a differential input thereto; and

,

an amplifier having a differential input responsive to the difference in voltage across the third and fourth transistors, and an output coupled to the bandgap reference output.

9. The reference of claim 8 wherein the third and fourth transistors are each resistively biased between the bandgap reference output and the bandgap reference ground connection.

10. The reference of claim 8 wherein the second and fourth transistors are larger than the first and third transistors, respectively.

11. The reference of claim 8 where the first and second transistors are of the same conductivity type as the third and forth transistors.

12. The reference of claim 8 where the first and second transistors are a different conductivity type than the third and forth transistors.

13. The reference of claim 8 wherein the third and fourth transistors are biased to operate at a lower current than the first and second transistors, respectively.

14. The reference of claim 8 wherein the second transistor is selectively resistively biased relative to the resistance of the resistor to result in a bandgap voltage output that is insensitive to temperature.

15. A reference having a bandgap reference output and a bandgap reference ground connection comprising:

first, second, third, fourth, fifth and sixth transistors, each having an emitter, a base and a collector;

the first and second transistors each being diode connected;

the third and fourth transistors having a common emitter connection;

the fifth and sixth transistors each being diode connected, the fifth transistor being coupled in series with the first transistor and the sixth transistor being coupled in series with the second transistor;

a resistor in series with the second and sixth transistors;

the series combination of the first and fifth transistors and the series combination of the second and sixth transistors and the resistor each being resistively biased between the bandgap reference output and the bandgap reference ground connection in relation to the relative sizes of the first, second, fifth and sixth transistors to operate the first transistor at higher current density than the second transistor, and to operate the fifth transistor at a higher current density than the. sixth transistor;

the bases of the fourth and third transistors being coupled to be responsive to the difference in voltage across the series combination of the first and fifth transistors and the series combination of the second and sixth transistors and the resistor, respectively, the third and fourth transistors each being resistively biased in relation to the relative sizes of the third and fourth transistors to operate the third transistor at a higher current density than the fourth transistor;

the resistor and the first through the sixth transistors being coupled to define a closed loop comprising the resistor, the difference in the base emitter voltages of the first and second transistors, the difference in the base ernitter voltages of the third and fourth transistors and the difference in the base emitter voltages of the fifth and sixth transistors; and

,

an amplifier having a differential input responsive to the difference in the voltages across the resistive biasing of the third and fourth transistors, and an output coupled to the bandgap reference output.

16. The reference of claim 15 wherein the sixth transistor is larger that the fifth transistor.

17. The reference of claim 15 further comprised of seventh and eighth transistors, the seventh and eighth transistors each being diode connected, the seventh transistor being coupled in series with the third transistor and the eighth transistor being coupled in series with the fourth transistor so that the closed loop further comprises the difference in base emitter voltages of the seventh and eighth transistors.

18. The reference of claim 17 wherein the sixth and eighth transistors are larger that the fifth and seventh transistors, respectively.

19. A reference having a bandgap reference output and a bandgap reference ground connection comprising:

first, second, third, fourth, fifth and sixth transistors, each having an emitter, a base and a collector;

the first and second transistors each being diode connected;

the third and fourth transistors being connected as a differential pair having a common emitter connection;

the fifth and sixth transistors each being diode connected, the fifth transistor being coupled in series with the first transistor and the sixth transistor being coupled in series with the second transistor;

a resistor in series with the second and sixth transistors;

the series combination of the first and fifth transistors and the series combination of the second and sixth transistors and the resistor each being resistively biased between the bandgap reference output and the bandgap reference ground connection to operate the first and fifh transistors at higher current densities than the second and sixth transistors;

the third and fourth transistors each being resistively biased to operate the third transistor at a higher current density than the fourth transistor;

the difference between the voltage across the series combination of the first and fifth transistors and the voltage across the series combination of the first and sixth transistors and the resistor being coupled to the bases of the fourth and the third transistors as a differential input thereto; and

,

an amplifier having a differential input responsive to the difference in voltage across the third and fourth transistors, and an output coupled to the bandgap reference output.

20. The reference of claim 19 wherein the sixth transistor is larger that the fifth transistor.

21. The reference of claim 19 further comprised of seventh and eighth transistors, the seventh and eighth transistors each being diode connected, the seventh transistor being coupled in series with the third transistor and the eighth transistor being coupled in series with the fourth transistor, the voltage coupled to the bases of the fourth and the third transistors as a differential input thereto further including the voltage difference across the seventh and eighth transistors.

22. The reference of claim 21 wherein the sixth and eighth transistors are larger that the fifth and seventh transistors, respectively.