Fast image simulation for photolithography

• US 6,765,651 B1
• Filed: 03/11/2003
• Issued: 07/20/2004
• Est. Priority Date: 03/11/2003
• Status: Active Grant

• Current Assignee: Feldman Technology Corporation
• Original Assignee: Feldman Technology Corporation
• Inventors: Fiekowsky, Peter J., Dutta, April, Kube, Paul R.
• Primary Examiner(s): Kim, Peter B.
• Application Number:
  US10/385,774
• Time in Patent Office: 497 Days
• Field of Search: 355/77, 355/53, 381/144, 438/16, 716/21
• US Class Current: 355/77
• CPC Class Codes: G03F 7/705 Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
• CPC Class Codes: G06T 11/00 2D [Two Dimensional] image generation
• CPC Class Codes: G06T 2207/30148 Semiconductor; IC; Wafer
• CPC Class Codes: G06T 5/30 Erosion or dilatation, e.g. thinning
• CPC Class Codes: G06T 7/0002 Inspection of images, e.g. flaw detection
• CPC Class Codes: G06T 7/001 using an image reference approach

Abstract

A fast method simulates photolithography using conventional image processing techniques. Convolution simulates for blurring; erosion and dilation correct for edge diffraction. In one technique, the source image of the photomask is deconvolved to sharpen it and then dilated to remove edge diffraction. The image is eroded, and then convolved according to the resolution of the stepper at the photomask plane. This aerial image can be further eroded to match the effects of resist and developing. Optional thresholding is done to produce a simulated processed wafer image. In a fast technique, the deconvolution step is eliminated. Dilation and erosion are combined into a single erosion. Where a phase shift mask is involved, a complex convolution is used. Source data can come from the photomask electronic design or from a visual image of the actual photomask. Optimizations include: special microprocessor instructions, floating point pixel values, separable convolution and annular illumination simulation.

Claims

1. A method of producing a simulated aerial image of a wafer, said method comprising:

receiving a source image representing a photomask;

computing an erosion amount for said source image;

performing erosion on said source image by said erosion amount to produce an intermediate image; and

performing convolution on said intermediate image to produce said simulated aerial image of said wafer.

2. A method as recited in claim 1 further comprising:

performing erosion on said simulated aerial image to produce a simulated wafer resist image, whereby said simulated wafer resist image represents the effects of exposure and development of photoresist on said wafer.

3. A method as recited in claim 2 further comprising:

performing thresholding on said simulated wafer resist image to produce a simulated processed wafer image, whereby said simulated processed wafer image represents the effects of a particular exposure level of photoresist on said wafer.

4. A method as recited in claim 1 further comprising:

resampling said source image to a lower resolution, whereby said method is performed faster as fewer pixels are processed.

5. A method as recited in claim 4 wherein said lower resolution after resampling is approximately 2-4 pixels per stepper resolution at the mask.

6. A method as recitcd in claim 1 further comprising:

displaying said simulated aerial image to a user.

7. A method as recited in claim 1 wherein said photomask is a phase shift photomask and wherein said step of performing convolution includes

performing a complex convolution using a phase image.

8. A method as recited in claim 1 further comprising:

performing dilation on said intermediate image, whereby effects of edge diffraction are compensated for.

9. A method as recited in claim 1 wherein said computing an erosion amount takes into account a dilation amount needed to compensate for edge diffraction.

10. A method as recited in claim 1 wherein said performing erosion includes performing subpixel erosion using blending.

11. A method as recited in claim 1 wherein said step of performing erosion includes performing subpixel erosion using a zoom-in, integer erode, zoom-out sequence.

12. A method as recited in claim 1 wherein said step of performing convolution includes performing a separable convolution.

13. A method as recited in claim 1 further comprising:

converting said source image or said intermediate image to floating point pixel values, whereby said method is performed faster.

14. A method of producing a simulated aerial image of a wafer, said method comprising:

receiving a source image representing a photomask;

performing deconvolution on said source image to produce a deconvolved image;

performing erosion on said deconvolved image to produce an intermediate image; and

performing convolution on said intermediate image to produce said simulated aerial image of said wafer.

15. A method as recited in claim 14 further comprising:

performing erosion on said simulated aerial image to produce a simulated wafer resist image, whereby said simulated wafer resist image represents the effects of exposure and development of photoresist on said wafer.

16. A method as recited in claim 15 further comprising:

performing thresholding on said simulated wafer resist image to produce a simulated processed wafer image, whereby said simulated processed wafer image represents the effects of a particular exposure level of photoresist on said wafer.

17. A method as recited in claim 14 further comprising:

displaying said simulated aerial image to a user.

18. A method as recited in claim 14 wherein said photomask is a phase shift photomask and wherein said step of performing convolution includes

performing a complex convolution using a phase image.

19. A method as recited in claim 14 further comprising:

performing dilation on said intermediate image, whereby effects of edge diffraction are compensated for.

20. A method as recited in claim 14 wherein said performing erosion includes performing subpixel erosion using blending.

21. A method as recited in claim 14 wherein said performing erosion includes performing subpixel erosion using a zoom-in, integer erode, zoom-out sequence.

22. A method as recited in claim 14 wherein said step of performing convolution includes performing a separable convolution.

23. A method as recited in claim 14 further comprising:

converting said source image, said deconvolved image or said intermediate image to floating point pixel values, whereby said method is performed faster.

24. A method of producing a simulated aerial image of a wafer, said method comprising:

receiving a source image representing a photomask;

calculating an apparent edge displacement due to edge diffraction;

performing erosion on said source image using said edge displacement to simulate said apparent edge displacement, thus producing an intermediate image; and

performing convolution on said intermediate image to produce said simulated aerial image of said wafer.

25. A method as recited in claim 24 wherein said performing erosion includes performing subpixel erosion using blending.

26. A method as recited in claim 24 wherein said performing erosion includes performing subpixel erosion using a zoom-in, integer erode, zoom-out sequence.