Multiple-level actuators and clamping devices

• US 6,767,614 B1
• Filed: 12/19/2001
• Issued: 07/27/2004
• Est. Priority Date: 12/19/2000
• Status: Expired due to Fees

• Current Assignee: Noel C. Macdonald, Wolfgang M.J. Hofmann
• Original Assignee: Noel C. Macdonald, Wolfgang M.J. Hofmann
• Inventors: MacDonald, Noel C., Adams, Scott G., Neves, Hercules, Hofmann, Wolfgang M. J.
• Primary Examiner(s): Pyon, Harold
• Assistant Examiner(s): Nordmeyer, Patricia L.
• Application Number:
  US10/021,311
• Time in Patent Office: 951 Days
• Field of Search: 428/131, 428/166, 428/188, 428/34.1
• US Class Current: 428/166
• CPC Class Codes: B81B 2201/033 Comb drives
• CPC Class Codes: B81B 2203/0136 Comb structures
• CPC Class Codes: B81C 1/0015 Cantilevers switches using MEMS H01H1/0036; electrostatic relays using micromechanics H01H59/0009; microelectro-mechanical resonators H03H9/02244
• CPC Class Codes: B81C 2201/0112 Bosch process
• CPC Class Codes: B81C 2201/0132 Dry etching, i.e. plasma etching, barrel etching, reactive ion etching [RIE], sputter etching or ion milling
• CPC Class Codes: B81C 2201/0198 for making a masking layer
• CPC Class Codes: Y10T 428/13 Hollow or container type article [e.g., tube, vase, etc.]
• CPC Class Codes: Y10T 428/24273 including aperture
• CPC Class Codes: Y10T 428/24562 Interlaminar spaces
• CPC Class Codes: Y10T 428/24744 Longitudinal or transverse tubular cavity or cell
• CPC Class Codes: Y10T 428/24802 Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]

Abstract

Improved fabrication processes for microelectromechanical structures, and unique structures fabricated by the improved processes are disclosed. In its simplest form, the fabrication process is a modification of the know SCREAM process, extended and used in such a way as to produce a combined vertical etch and release RIE process, which may be referred to as a “combination etch”. Fabrication of a single-level micromechanical structure using the process of the present invention includes a novel dry etching process to shape and release suspended single crystal silicon elements, the process combining vertical silicon reactive ion etching (Si-RIE) and release etches to eliminate the need to deposit and pattern silicon dioxide mask layers on the sides of suspended structures and to reduce the mechanical stresses in suspended structures caused by deposited silicon dioxide films.

Claims

1. A microelectromechanical structure comprising:

a substrate having a cavity formed by etching through a single mask to produce a two-level suspended structure in said substrate, the structure including;

a first level incorporating a first clamp stage suspended in said substrate and movable by a first set of actuators;

a second level incorporating a second clamp stage suspended in said substrate and movable independently of said first stage by a second set of actuators, said first and second levels being substantially identical and vertically self-aligned, said first and second sets of actuators being operable in opposite directions to shift one of said first and second clamp stages with respect to the other.

2. The structure of claim 1, wherein said substrate lies in a horizontal plane and said first and second clamp stages are movable in planes parallel to each other and to the plane of said substrate.

3. The structure of claim 2, wherein said first and second sets of actuators are comb actuators, and wherein at least one of said sets of actuators is operable to cause one of said stages to move horizontally with respect to the other of said stages.

4. The structure of claim 3, wherein each of said stages incorporates an aperture, said apertures being vertically aligned when said sets of actuators are at rest, the relative motion of said stages displacing one aperture with respect to the other.

5. The structure of claim 2, wherein each of said stages incorporates an aperture, said aperture being vertically aligned when said stages are at rest to provide an opening through said first and second stages, and wherein movement of one stage with respect to the other decreases the size of said through opening.

14. The structure of claim 1, further including additional levels of self-aligned, suspended structures.

15. The structure of claim 1, wherein said self-aligned, suspended clamp stages are aligned to a feature on the substrate.

16. The structure of claim 15, wherein the feature on the substrate is an aperture.

6. A multilevel microelectromechanical structure, comprising:

a first vertical electrode having a first vertical height extending through a first structure level;

a second vertical electrode spaced horizontally from said first electrode and having a second vertical height extending through said first structure level and through a second structure level to provide vertical assymetry, said electrodes being energizable to produce relative vertical motion of one electrode with respect to the other.

7. The structure of claim 6, wherein said height of said second electrode is at least twice the height of said first electrode.

8. The structure of claim 6, wherein said first electrode is included in a set of spaced, parallel, electrodes each having said first height.

9. The structure of claim 6, wherein said second electrode is included in a set of spaced parallel electrodes each having said second height.

10. The structure of claim 6, wherein one of said electrodes is fixed and the other of said electrodes is movable.

11. The structure of claim 6, wherein said first electrode is included in a first set of spaced, parallel electrodes each having said first height and said second electrode is included in a second set of spaced, parallel electrodes each having said second height, said electrodes being interleaved to form a comb-type actuator.

12. The structure of claims 11, further including a bias voltage selectively applied to said electrode sets to cause one set of electrodes to move vertically with respect to the other.

13. The structure of claim 12, wherein one of said sets of electrodes is fixed and the other of said sets is vertically movable, whereby said sets provide a vertically displaceable actuator.

17. The structure of claim 6, further including additional suspended structures of varying heights.

18. The structure of claim 6, wherein the electrodes, when energized, produce a vertical force which is greater than that achieved by a comparable structure employing electrodes of identical height.

19. The structure of claim 6, wherein the electrodes, when energized, produce a vertical force in a direction of displacement from an equilibrium position, the range of displacement being greater than that achieved by a comparable structure employing electrodes of identical height.

20. A multilevel microelectromechanical structure, comprising:

a first set of electrodes spaced horizontally and having a first vertical height extending through a first structure level;

a second set of electrodes self-aligned horizontally and spaced vertically from said first set of electrodes and having a second vertical height extending through said second structure level;

said second set of electrodes being mechanically attached to but electrically insulated from said first set of electrodes;

both sets of electrodes being energizable to produce relative horizontal or vertical motion of one electrode with respect to the other.

21. The structure of claim 20, comprising three or more sets of electrodes, aligned to each other horizontally and spaced from each other vertically.

22. The structure of claim 20, wherein the electrodes, when electrically energized, produce a vertical force which is greater than that achieved by a comparable structure employing only a single level of electrodes of the combined height.

23. The structure of claim 20, wherein the electrodes, when electrically energized, produce a vertical force in a direction of displacement from the equilibrium position over a greater range of displacement than that achieved by a comparable structure employing only a single level of electrodes of the combined height.

24. The structure of claim 20, wherein said sets of electrodes are energizable to produce a bidirectional vertical actuator, said electrodes being energized by a variation of electrode bias conditions.

25. The structure in claim 20, further including means to bias said sets of electrodes to produce a multi-stable device with several stable equilibria determined by the biasing conditions of the electrodes

26. The device of claim 25, where the multi-stable device is produced by applying bias voltages as follows:

a first voltage is applied in an inner electrode on an upper level and an outer electrode on a lower level; and

a second voltage is applied to an outer electrode on the upper level and an inner electrode on the lower level.

27. A microelectromechanical structure, comprising:

a substrate having a cavity formed by etching through a single mask to produce a multi-level structure;

a first level released stage suspended in the cavity in said substrate;

a first set of actuators connected to said first level clamp stage for moving said clamp stage;

a second level clamp stage on said substrate substantially identical to and vertically self-aligned with said first level clamp stage, said first and second level clamp stages being relatively movable.

28. The structure of claim 27, wherein said stages lie in parallel planes.

29. The structure of claim 28, wherein said stages incorporate apertures which are vertically aligned to provide a through aperture when said stages are at rest, and wherein relative movement of said stages along said parallel planes decreases the size of said through opening.

30. The structure of claim 28, wherein said second level clamp stage is fixed to said substrate.

31. The structure of claim 28, wherein said second level clamp stage is released and suspended in said cavity, and further including a second set of actuators connected to move said second level clamp stage.