Method of manufacturing a contact of a semiconductor device using cluster apparatus having at least one plasma pretreatment module
First Claim
1. A method of manufacturing a contact of a semiconductor device, comprising the steps of:
- providing a semiconductor substrate on which an interlayer is formed on an underlayer comprising silicon;
forming a contact hole in the interlayer using a photoresist pattern as an etching mask, wherein a surface of the underlayer is exposed at the bottom of the contact hole;
loading the semiconductor substrate into apparatus having a plasma pretreatment module and a deposition module connected to each other, the plasma pretreatment module comprising a vacuum chamber, and plasma generating apparatus operative to provide the vacuum chamber with plasma;
transferring the semiconductor substrate into the vacuum chamber of the plasma pretreatment module;
ashing the photoresist pattern, in the vacuum chamber of the plasma pretreatment module, to remove the photoresist pattern;
subsequently removing a damaged layer at the surface of the underlayer that defines the bottom of the contact hole, in the vacuum chamber of the plasma pretreatment module;
subsequently cleaning the semiconductor substrate, in the vacuum chamber of the plasma pretreatment module;
subsequently transferring the semiconductor substrate, while in a vacuum, from the vacuum chamber of the plasma pretreatment module to the deposition module; and
depositing material onto the substrate that fills the contact hole, in the deposition module.
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Accused Products
Abstract
A method of manufacturing a contact of a semiconductor device includes a series of pretreatment processes each performed in a plasma pretreatment module. A semiconductor substrate has an interlayer formed on an underlayer of a material containing silicon. A contact hole is formed in the interlayer to expose a surface of the underlayer. Subsequently, the semiconductor substrate is loaded into a plasma pretreatment module. The photoresist pattern is removed by ashing in the plasma pretreatment module. A damaged layer at the surface exposed by the contact hole is then removed in the plasma pretreatment module. Subsequently, the semiconductor substrate is pre-cleaned in the plasma pretreatment module. The semiconductor substrate is then transferred, while in a vacuum, to a deposition module. There, an upper layer is formed on the substrate to fill the contact hole.
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Citations
29 Claims
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1. A method of manufacturing a contact of a semiconductor device, comprising the steps of:
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providing a semiconductor substrate on which an interlayer is formed on an underlayer comprising silicon;
forming a contact hole in the interlayer using a photoresist pattern as an etching mask, wherein a surface of the underlayer is exposed at the bottom of the contact hole;
loading the semiconductor substrate into apparatus having a plasma pretreatment module and a deposition module connected to each other, the plasma pretreatment module comprising a vacuum chamber, and plasma generating apparatus operative to provide the vacuum chamber with plasma;
transferring the semiconductor substrate into the vacuum chamber of the plasma pretreatment module;
ashing the photoresist pattern, in the vacuum chamber of the plasma pretreatment module, to remove the photoresist pattern;
subsequently removing a damaged layer at the surface of the underlayer that defines the bottom of the contact hole, in the vacuum chamber of the plasma pretreatment module;
subsequently cleaning the semiconductor substrate, in the vacuum chamber of the plasma pretreatment module;
subsequently transferring the semiconductor substrate, while in a vacuum, from the vacuum chamber of the plasma pretreatment module to the deposition module; and
depositing material onto the substrate that fills the contact hole, in the deposition module. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A method of manufacturing a contact of a semiconductor device, comprising the steps of:
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providing a semiconductor substrate on which an interlayer is formed on an underlayer comprising silicon;
forming a contact hole in the interlayer using a photoresist pattern as an etching mask, wherein a surface of the underlayer is exposed at the bottom of the contact hole;
ashing the photoresist pattern using plasma and UV light to remove the photoresist pattern, in a plasma pretreatment processing chamber;
subsequently removing a damaged layer at the surface of the underlayer that defines the bottom of the contact hole, using a plasma and a fluorine-based gas, in a plasma pretreatment processing chamber, whereby an oxide is formed at said surface;
subsequently cleaning the semiconductor substrate to remove said oxide in a plasma pretreatment processing chamber, said cleaning comprising directing a plasma that chemically reacts with the oxide onto the surface to form a reaction layer, and annealing the substrate to vaporize the reaction layer;
subsequently transferring the semiconductor substrate, while in a vacuum, to a deposition apparatus; and
depositing material onto the substrate that fills the contact hole, in the deposition apparatus. - View Dependent Claims (18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29)
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Specification