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Semiconductor memory device with memory cells having same characteristics and manufacturing method for the same

  • US 6,768,151 B2
  • Filed: 01/17/2003
  • Issued: 07/27/2004
  • Est. Priority Date: 05/16/2001
  • Status: Expired due to Term
First Claim
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1. A semiconductor memory device having a memory cell array region, a peripheral circuit region and a connection region between said memory cell array region and said peripheral circuit region, comprising:

  • ferroelectric capacitors formed on a semiconductor substrate via an interlayer insulating film in said memory cell array region; and

    conductive films formed on said interlayer insulating film in said connection regions conductive routes passing through said interlayer insulating film in said connection region, each conductive route being connected with said conductive films and said semiconductor substrate, and wherein both said conductive films and said conductive routes in said connection region are dummy structures.

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