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High-voltage transistor with JFET conduction channels

  • US 6,768,171 B2
  • Filed: 05/02/2002
  • Issued: 07/27/2004
  • Est. Priority Date: 11/27/2000
  • Status: Expired due to Fees
First Claim
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1. A high-voltage field-effect transistor (HVFET) comprising:

  • a first buried layer of a second conductivity type disposed in a first epitaxial layer of a first conductivity type;

    a second buried layer of the second conductivity type disposed in a second epitaxial layer of the first conductivity type, the one or more first and second buried layers being spaced vertically apart in a substantially parallel configuration such that a JFET conduction channel of the first conductivity type is formed between the first and second buried layers;

    a drain region of the first conductivity type disposed in the second epitaxial layer;

    a body region of the second conductivity type disposed in the second epitaxial layer;

    a source region of the first conductivity type disposed in the body region; and

    an insulated gate member disposed adjacent to the body region; and

    wherein the first epitaxial layer is formed on a substrate of the second conductivity type.

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