Pin layout of dual band receiver with two input pads/pins restricted to a single side of a four sided package

• US 6,768,192 B2
• Filed: 08/01/2003
• Issued: 07/27/2004
• Est. Priority Date: 04/15/1999
• Status: Expired due to Fees

• Current Assignee: Renesas Electronics Corporation
• Original Assignee: Hitachi, Ltd.
• Inventors: Hashimoto, Takashi, Tanaka, Satoshi, Takikawa, Kumiko, Okabe, Yoshiyuki
• Primary Examiner(s): Tran, Minhloan
• Assistant Examiner(s): Dickey, Thomas L
• Application Number:
  US10/631,793
• Publication Number:
  US 20040021208A1
• Time in Patent Office: 361 Days
• Field of Search: 257/536-538, 257/678, 257/690-697, 257/701, 257/728, 455/142-144, 455/146
• US Class Current: 257/692
• CPC Class Codes: H01L 2223/6611 Wire connections
• CPC Class Codes: H01L 2223/6644 Packaging aspects of high-frequency amplifiers
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/49171 Fan-out arrangements
• CPC Class Codes: H01L 2224/49175 Parallel arrangements
• CPC Class Codes: H01L 2224/49176 Wire connectors having the same loop shape and height
• CPC Class Codes: H01L 23/50 for integrated circuit devices, e.g. power bus, number of leadsH01L23/482 - H01L23/498 take precedence
• CPC Class Codes: H01L 23/66 High-frequency adaptations
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/49 of a plurality of wire connectors
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01013 Aluminum [Al]
• CPC Class Codes: H01L 2924/01015 Phosphorus [P]
• CPC Class Codes: H01L 2924/1305 Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/14 Integrated circuits
• CPC Class Codes: H01L 2924/19042 being an inductor
• CPC Class Codes: H01L 2924/19043 : being a resistor
• CPC Class Codes: H01L 2924/30105 : Capacitance
• CPC Class Codes: H01L 2924/30107 : Inductance
• CPC Class Codes: H01L 2924/3011 : Impedance
• CPC Class Codes: H01L 2924/30111 : matching

Abstract

A pin layout which prevents degradation of a frequency characteristic of a low noise amplifier and a receiving mixer included in a semiconductor integrated circuit for dual-band transmission/reception wherein the circuit of the low noise amplifier is provided at a position where the distance from the end of a pin outside the package of the low noise amplifier to the pad is the shortest; ground pins of two low noise amplifiers and the high frequency signal pins are arranged respectively so as not to be adjacent to each other; the power source and ground pin of the low noise amplifier, and the power source and ground pin of the bias circuit are respectively separated; and high frequency signal wires do not intersect each other.

Claims

1. A semiconductor integrated circuit device for receiving operation of a mobile radio communication apparatus comprising:

a sealing package enclosing a semiconductor chip and having four sides and being formed in rectangular shape in a plane view;

a first low noise amplifier into which a radio frequency reception signal of a first frequency band is to be inputted;

a second low noise amplifier into which a radio frequency reception signal of a second frequency band is to be inputted, the second frequency band being different from the first frequency band;

another circuit;

a first receiving mixer for the first frequency band into which an output signal from said first low noise amplifier is to be inputted;

a second receiving mixer for the second frequency band into which an output signal from said second low noise amplifier is to be inputted;

a first pad disposed on said semiconductor chip and electrically connected to said first low noise amplifier;

a second pad disposed on said semiconductor chip and electrically connected to said second low noise amplifier;

a third pad disposed on said semiconductor chip and electrically connected to said another circuit;

a first input pin having a first pin end projecting to outside said sealing package and electrically connected to said first pad;

a second input pin having a second pin end projecting to outside at the same side of said sealing package where the first pin end is projecting to outside and electrically connected to said second pad; and

another pin having a third pin end projecting to outside at the same side of said sealing package where the first pin end is projecting to outside and electrically connected to said third pad,

wherein said first and second low noise amplifiers, said another circuit, said first and second receiving mixers, said first, second, and third pads, said first and second input pins, and said another pin are monolithically integrated on the semiconductor chip,

wherein said first and second pads are disposed at the same one of four sides of the semiconductor chip,

wherein a distance between said first pad and said first pin end and a distance between said second pad and said second pin end are shorter than a distance between said third pad and said third pin end, and

wherein said radio frequency reception signal of the first frequency band is to be applied to said first input pin and said radio frequency reception signal of the second frequency band is to be applied to said second input pin.

2. The semiconductor integrated circuit device according to claim 1,

wherein said first receiving mixer is provided so as to receive a local oscillation signal of the first frequency band and said second receiving mixer is provided so as to receive a local oscillation signal of the second frequency band.

3. The semiconductor integrated circuit device according to claim 1, further comprising:

a first output pin electrically connected to said first low noise amplifier; and

a second output pin electrically connected to said second low noise amplifier,

wherein a radio frequency reception signal of the first frequency band amplified through said first low noise amplifier is outputted from said first output pin and a radio frequency reception signal of the second frequency band amplified through said second low noise amplifier is outputted from said second output pin.

4. The semiconductor integrated circuit device according to claim 3,

wherein said first receiving mixer is provided so as to receive a local oscillation signal of the first frequency band and said second receiving mixer is provided so as to receive a local oscillation signal of the second frequency band.

5. The semiconductor integrated circuit device according to claim 3,

wherein said first low noise amplifier comprises a first bipolar transistor having an emitter to which a ground voltage is to be applied, a base electrically connected to said first input pin, and a collector electrically connected to said first output pin, and

wherein said second low noise amplifier comprises a second bipolar transistor having an emitter to which a ground voltage is to be applied, a base electrically connected to said second input pin, and a collector electrically connected to said second output pin.

6. The semiconductor integrated circuit device according to claim 5,

wherein said first receiving mixer is provided so as to receive a local oscillation signal of the first frequency band and said second receiving mixer is provided so as to receive a local oscillation signal of the second frequency band.

7. A semiconductor integrated circuit device for receiving operation of a mobile radio communication apparatus comprising:

a sealing package enclosing a semiconductor chip and having four sides being formed in rectangular shape in a plane view;

a first radio frequency input filter into which a radio frequency reception signal of a first frequency band is to be inputted;

a second radio frequency input filter into which a radio frequency reception signal of a second frequency band is to be inputted, the second frequency band being different from the first frequency band;

a first input pin electrically connected to said first radio frequency input filter; and

a second input pin electrically connected to said second radio frequency input filter,

wherein said first and second input pins are monolithically integrated on said semiconductor chip,

wherein said first and second radio frequency input pins are coupled with said first and second radio frequency input filters, respectively, at one of four sides of said semiconductor chip,

wherein said first and second radio frequency input pins are disposed at said one side, and

wherein said radio frequency reception signal of the first frequency band is to be applied to said first input pin and said radio frequency reception signal of the second frequency band is to be applied to said second input pin.

8. A semiconductor integrated circuit device according to claim 7, further comprising:

a first low noise amplifier into which a radio frequency reception signal of the first frequency band is to be inputted;

a second low noise amplifier into which a radio frequency reception signal of the second frequency band is to be inputted;

another circuit;

a first receiving mixer for the first frequency band into which an output signal from the first low noise amplifier is to be inputted; and

a second receiving mixer for the second frequency band into which an output signal from the second low noise amplifier is to be inputted,

wherein said first and second low noise amplifiers, said another circuit, and said first and second receiving mixers are monolithically integrated on one semiconductor chip,

wherein a distance between a first pad electrically connected to said first low noise amplifier and a first pin end of one of said first and second radio frequency input pins projecting to outside the sealing package and electrically connected to the first pad is shorter than a distance between a second pad electrically connected to said second low noise amplifier and a second pin end of the other of said first and second radio frequency input pins projecting to outside the sealing package at the same side where the first pin end is projecting to outside the sealing package and electrically connected to the second pad,

wherein a distance between the first pad electrically connected to said first low noise amplifier and the first pin end of the one of said first and second radio frequency input pins projecting to outside the sealing package and electrically connected to the first pad is shorter than a distance between a third pad electrically connected to said another circuit and a third pin end projecting to outside the sealing package at the same side where the first pin end is projecting to outside the sealing package and electrically connected to the third pad, and

wherein said radio frequency reception signal of the first frequency band is to be applied to the first input pin having the first pin end and said radio frequency reception signal of the second frequency band is to be applied to the second input pin having the second pin end.

9. A semiconductor integrated circuit device according to claim 8,

wherein said first receiving mixer is provided so as to receive a local oscillation signal of the first frequency band and said second receiving mixer is provided so as to receive a local oscillation signal of the second frequency band.

10. A semiconductor integrated circuit device according to claim 8, further comprising:

a first output pin electrically connected to said first low noise amplifier; and

a second output pin electrically connected to said second low noise amplifier,

wherein a radio frequency reception signal of the first frequency band amplified through said first low noise amplifier is outputted from said first output pin and a radio frequency reception signal of the second frequency band amplified through said second low noise amplifier is outputted from said second output pin.

11. A semiconductor integrated circuit device according to claim 10,

wherein said first receiving mixer is provided so as to receive a local oscillation signal of the first frequency band and said second receiving mixer is provided so as to receive a local oscillation signal of the second frequency band.

12. A semiconductor integrated circuit device according to claim 10,

wherein said first low noise amplifier comprises a first bipolar transistor having an emitter to which a ground voltage is to be applied, a base electrically connected to said first input pin, and a collector electrically connected to said first output pin, and

wherein said second low noise amplifier comprises a second bipolar transistor having an emitter to which a ground voltage is to be applied, a base electrically connected to said second input pin, and a collector electrically connected to said second output pin.

13. A semiconductor integrated circuit device according to claim 12,

wherein said first receiving mixer is provided so as to receive a local oscillation signal of the first frequency band and said second receiving mixer is provided so as to receive a local oscillation signal of the second frequency band.

14. A semiconductor integrated circuit device comprising:

a first low noise amplifier into which a radio frequency reception signal of a first frequency band is to be inputted;

a second low noise amplifier into which a radio frequency reception signal of a second frequency band is to be inputted, the second frequency band being different from the first frequency band;

another circuit;

a first receiving mixer for the first frequency band into which an output signal from the first low noise amplifier is to be inputted;

a second receiving mixer for the second frequency band into which an output signal from the second low noise amplifier is to be inputted;

a first input pin electrically connected to said first low noise amplifier, the radio frequency reception signal of the first frequency band to be applied to said first input pin;

a second input pin electrically connected to said second low noise amplifier, the radio frequency reception signal of the second frequency band to be applied to said second input pin; and

a third input pin electrically connected to said another circuit,

wherein the first and second low noise amplifiers, said another circuit, and said first and second receiving mixers are monolithically integrated on one semiconductor chip, and

wherein said first, second, and third input pins are disposed at a same side of a four-sided said semiconductor integrated circuit device, in a plane view.

15. A semiconductor integrated circuit device according to claim 14,

wherein said first receiving mixer is provided so as to receive a local oscillation signal of the first frequency band and said second receiving mixer is provided so as to receive a local oscillation signal of the second frequency band.

16. A semiconductor integrated circuit device according to claim 14, further comprising:

a first output pin electrically connected to said first low noise amplifier; and

a second output pin electrically connected to said second low noise amplifier,

wherein a radio frequency reception signal of the first frequency band amplified through said first low noise amplifier is outputted from said first output pin and a radio frequency reception signal of the second frequency band amplified through said second low noise amplifier is outputted from said second output pin.

17. A semiconductor integrated circuit device according to claim 16,

wherein said first receiving mixer is provided so as to receive a local oscillation signal of the first frequency band and said second receiving mixer is provided so as to receive a local oscillation signal of the second frequency band.

18. A semiconductor integrated circuit device according to claim 16,

wherein said first low noise amplifier comprises a first bipolar transistor having an emitter to which a ground voltage is to be applied, a base electrically connected to said first input pin, and a collector electrically connected to said first output pin, and

wherein said second low noise amplifier comprises a second bipolar transistor having an emitter to which a ground voltage is to be applied, a base electrically connected to said second Input pin, and a collector electrically connected to said second output pin.

19. A semiconductor integrated circuit device according to claim 18,

wherein said first receiving mixer is provided so as to receive a local oscillation signal of the first frequency band and said second receiving mixer is provided so as to receive a local oscillation signal of the second frequency band.