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GMR configuration with enhanced spin filtering

  • US 6,770,382 B1
  • Filed: 11/22/1999
  • Issued: 08/03/2004
  • Est. Priority Date: 11/22/1999
  • Status: Expired due to Fees
First Claim
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1. A spin valve giant magnetoresistance (SVGMR) sensor comprising:

  • a seed layer over a substrate, said seed layer formed of a material selected from the group consisting of nickel chromium alloys, nickel -chromium-copper alloys and nickel-iron-chromium alloys;

    a metal oxide buffer layer over the seed layer;

    said metal oxide buffer layer is comprised of alpha—

    Fe2O3 and has a thickness of between about 5 to 15 Å

    ;

    a free ferromagnetic layer over said metal oxide buffer layer;

    said metal oxide buffer layer and said free ferromagnetic layer have about the same crystal lattice constants; and

    said metal oxide buffer layer and said free ferromagnetic layer have the same crystal structure;

    a non-magnetic conductor spacer layer over said free ferromagnetic layer;

    a pinned ferromagnetic layer over the non-magnetic conductor spacer layer; and

    a pinning material layer over the pinned ferromagnetic layer; and

    a capping layer over said pinning material layer.

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