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Low temperature plasma Si or SiGe for MEMS applications

  • US 6,770,569 B2
  • Filed: 08/01/2002
  • Issued: 08/03/2004
  • Est. Priority Date: 08/01/2002
  • Status: Expired due to Term
First Claim
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1. A method for making a MEMS structure, comprising the steps of:

  • providing a CMOS substrate having interconnect metal deposited thereon; and

    creating a MEMS structure on the substrate through the plasma assisted chemical vapor deposition of a material selected from the group consisting of silicon and silicon-germanium alloys.

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