Micromachined pyro-optical structure

• US 6,770,882 B2
• Filed: 01/14/2002
• Issued: 08/03/2004
• Est. Priority Date: 01/14/2002
• Status: Expired due to Fees

• Current Assignee: Multispectral Imaging, Inc. (Agiltron, Inc.)
• Original Assignee: Multispectral Imaging, Inc. (Agiltron, Inc.)
• Inventors: Setiadi, Dadi, Carr, William
• Primary Examiner(s): Le, N.
• Assistant Examiner(s): PRUCHNIC, STANLEY J
• Application Number:
  US10/044,436
• Publication Number:
  US 20030132386A1
• Time in Patent Office: 932 Days
• Field of Search: 250/338.1, 250/332, 250/351, 356/519
• US Class Current: 250/338.1
• CPC Class Codes: G01J 2005/0077 Imaging
• CPC Class Codes: G01J 3/26 using multiple reflection, e.g. Fabry-Perot interferometer, variable interference filters
• CPC Class Codes: G01J 3/36 Investigating two or more bands of a spectrum by separate detectors
• CPC Class Codes: G01J 5/04 Casings
• CPC Class Codes: G01J 5/046 Materials; Selection of thermal materials
• CPC Class Codes: G01J 5/061 by controlling the temperature of the apparatus or parts thereof, e.g. using cooling means or thermostats
• CPC Class Codes: G01J 5/10 using electric radiation detectors
• CPC Class Codes: G01J 5/602 using selective, monochromatic or bandpass filtering

Abstract

This invention is a micromachined sensor pixel structure that can be fabricated either as a discrete sensor or in array form with application to thermal sensing of radiation receive from various wavelength emitters. The transmissivity of a thermally-isolated microplatform is a sensitive function of temperature. This transmissivity is modulated by incident radiation from sources including infrared sources. The transmissivity of a micromachined structure is interrogated by means of an optical carrier. Readout is obtained by means of conventional silicon optical sensors or imagers. A multiplicity of micromachined pixels can be tailored for specific wavelengths permitting the array to operate as a multispectral imager with windows ranging from ultraviolet to millimeter wavelengths.

Claims

1. An apparatus comprising;

a pixel structure sensitive to incident low-level photonic radiation comprising;

a planar substrate;

a patterned metallic mirror disposed on the top surface of said planar substrate;

a platform connected to said planar substrate by at least one tetherbeam, said tetherbeam having low thermal conductivity, wherein said platform and said planar substrate are separated by an air gap, said air gag forming a first Fabry-Perot cavity having a spacing that substantially maximizes the absorption of incident low-level radiation; and

a pyro-optical film disposed on a surface of said platform, wherein said pyro-optical film has an optical transmissivity at the wavelength of an optical carrier beam that depends on the temperature of said pyro-optical film, and wherein said pyro-optical film defines a second Fabry-Perot cavity, wherein a thickness of said pyro-optical film substantially maximizes the thermal modulation index at the wavelength of said optical carrier beam.

2. The apparatus of claim 1 wherein said pixel structure further comprises an external photodetector, wherein said patterned metallic mirror contains an opening that is aligned with said external photodetector.

3. The apparatus of claim 2 wherein said pixel structure further comprises means for modulating the amplitude of said optical carrier beam with a periodic waveform such that response of said photodetector due to said carrier beam is gated in synchronization with the modulation of said carrier beam.

4. The apparatus of claim 1 wherein said pixel structure further comprises a resistive heater.

5. The apparatus of claim 4 wherein said pixel structure further comprises means for modulating the temperature of said platform in synchronization with a gating of an external detector.

6. The apparatus of claim 4 wherein said pixel structure further comprises means for causing said platform to contact said substrate such that said pixel structure is desensitized to low-level radiation.

7. The apparatus of claim 1 wherein said pixel structure is arranged as a planar array.

8. The apparatus of claim 7 wherein said tetherbeam further comprises a support post shared by a tetherbeam of an adjacent pixels.

9. The apparatus of claim 1 wherein said pixel structure further comprises:

means for periodically chopping incident low-level radiation; and

means for gating the amplitude of said optical carrier beam synchronously with said periodically chopped incident low-level radiation.

10. The apparatus of claim 9 wherein said pixel structure further comprises:

an electrostatic actuator for changing the thickness of said air cap; and

an external photodetector wherein said photodetector detects said optical carrier beam and is gated in synchronization with the movement of said electrostatic actuator.

11. The apparatus of claim 10 wherein said pixel structure further comprises means for tuning the infrared response over a selected spectral range by changing said air gap.

12. The apparatus of claim 1 wherein said pixel structure further comprises a heater element, wherein said heater element is external to said platform.

13. The apparatus of claim 1 wherein said platform includes means for monitoring and controlling the temperature of said platform.

14. The apparatus of claim 1 wherein said pyro-optical film is an oxide of vanadium operated in the temperature range 55 to 75 deg C.

15. The apparatus of claim 1 further comprising an optical source of said optical carrier beam, said optical source further comprising at least one member chosen from the set consisting of filtered incandescent optical sources, gallium arsenide pn junction photosources, GaAsP pn junction photosources, GaN pn junction photosources, GaAIN pn junction photosources, and InGaN pn junction photosources.

16. The apparatus of claim 1 wherein said tetherbeams comprises silicon dioxides.

17. The apparatus of claim 1 wherein said substrate further comprises a photodetector.

18. The apparatus of claim 1 further comprising a vacuum chamber enclosure, and wherein said pixel structure is contained within said vacuum chamber enclosure.