Semiconductor device including intermediate wiring element

• US 6,770,964 B2
• Filed: 09/17/2001
• Issued: 08/03/2004
• Est. Priority Date: 09/29/2000
• Status: Expired due to Fees

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Hiyoshi, Michiaki
• Primary Examiner(s): Lee, Eddie
• Assistant Examiner(s): VU, QUANG D
• Application Number:
  US09/953,295
• Publication Number:
  US 20020038873A1
• Time in Patent Office: 1,051 Days
• Field of Search: 257/578, 257/621, 257/622, 257/690, 257/691, 257/692, 257/693, 257/694, 257/718, 257/719, 257/723, 257/724, 257/725, 257/726, 257/778, 257/782, 257/784, 257/727, 438/411, 438/617
• US Class Current: 257/692
• CPC Class Codes: H01L 2224/45124 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/49111 the connectors connecting two common bonding areas, e.g. Litz or braid wires
• CPC Class Codes: H01L 2224/49113 the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
• CPC Class Codes: H01L 2224/73221 Strap and wire connectors
• CPC Class Codes: H01L 23/24 solid or gel at the normal operating temperature of the device H01L23/3135 takes precedence
• CPC Class Codes: H01L 24/45 of an individual wire connector
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/49 of a plurality of wire connectors
• CPC Class Codes: H01L 25/072 the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 Boron [B]
• CPC Class Codes: H01L 2924/01006 Carbon [C]
• CPC Class Codes: H01L 2924/01013 Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 Silicon [Si]
• CPC Class Codes: H01L 2924/01023 Vanadium [V]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/1305 : Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13055 : Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/15787 : Ceramics, e.g. crystalline carbides, nitrides or oxides
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/19043 : being a resistor
• CPC Class Codes: H01L 2924/19107 : off-chip wires
• CPC Class Codes: H01L 2924/30105 : Capacitance
• CPC Class Codes: H01L 2924/30107 : Inductance
• CPC Class Codes: H01L 2924/351 : Thermal stress

Abstract

An IGBT module comprises a ceramic substrate having a collector wiring element on a surface thereof, an IGBT chip provided on the collector wiring element, an insulative member provided on the collector wiring element and configured to cover at least edge portions of the IGBT chip, and an insulative sealing resin, provided on the ceramic substrate, for covering the IGBT chip and the insulative member. The sealing resin has lower insulation properties than the insulative member.

Claims

1. A semiconductor device comprising:

an insulative substrate having a first wiring element on a surface thereof;

a semiconductor chip provided on the first wiring element;

an insulative resin provided on the first wiring element and covering at least edge portions of the semiconductor chip, and

an insulative sealing member, provided on the insulative substrate, covering the semiconductor chip and the insulative resin, said sealing member having lower insulation and higher softness properties than a region of said insulative resin, which is in contact with the semiconductor chip and the first wiring element.

2. The semiconductor device according to claim 1, further comprising an intermediate wiring element provided on the insulative resin, said intermediate wiring element being formed on the semiconductor chip and the first wiring element with the insulative resin therebetween, said intermediate wiring element having wiring portions electrically connected to a surface region of the semiconductor chip and to the first wiring element.

3. The semiconductor device according to claim 2, further comprising external connection terminals provided on the wiring portions.

4. The semiconductor device according to claim 2, wherein the wiring portions are electrically connected to gate, source and drain regions of the semiconductor chip.

5. A semiconductor device comprising:

an insulative substrate having a first wiring element on a surface thereof;

a semiconductor chip provided on the first wiring element;

an insulative member provided on the first wiring element and covering at least edge portions of the semiconductor chip;

second wiring elements provided on and/or in the insulative member, said second wiring elements being electrically connected to a surface region of the semiconductor chip and to the first wiring element; and

an insulative sealing member, provided on the insulative substrate, covering the semiconductor chip and the insulative member, said sealing member having lower insulation and higher softness properties than a region of said insulative member which is in contact with the semiconductor chip and the first wiring element.

6. The semiconductor device according to claim 5, further comprising external connection terminals provided on the second wiring elements.

7. A semiconductor device comprising:

an insulative substrate having a wiring element on a surface thereof;

a semiconductor chip provided on the wiring element;

an insulative member provided on the wiring element and covering at least edge portions of the semiconductor chip;

wiring layers formed on the insulative member and electrically connected to a surface region of the semiconductor chip and the wiring element; and

an insulative sealing member, provided on the insulative substrate, covering the semiconductor chip and the wiring layer.

8. The semiconductor device according to claim 7, wherein a region of the insulative member, which is in contact with the semiconductor chip and the wiring element, has higher insulation properties than the sealing member.

9. The semiconductor device according to claim 7, further comprising an insulative resin lying between the insulative member and the semiconductor chip and between the insulative member and the wiring element.

10. The semiconductor device according to claim 7, further comprising external connection terminals provided on the wiring layers.

11. The semiconductor device according to claim 7, wherein the wiring layers are electrically connected to gate, source and drain regions of the semiconductor chip.

12. A semiconductor device comprising:

an insulative substrate having a wiring element on a surface thereof;

semiconductor chips provided on the wiring element;

an insulative member provided on the wiring element and covering the semiconductor chips, said insulative member having first openings and a second opening, said first openings exposing, at their bottom portions, parts of surfaces of the semiconductor chips, said second opening exposing at its bottom portion a part of the wiring element, said insulative member covering at least edge portions of the semiconductor chips;

wiring layers formed on the insulative member and electrically connected to surface regions of the semiconductor chips, which are exposed to the first openings and to the wiring element which is exposed to the second opening;

external connection terminals provided on the wiring layers, said external connection terminals including input terminals receiving signals and output terminals outputting signals, said wiring layers being formed such that current paths between the input terminals and the output terminals via the semiconductor chips are substantially equal; and

an insulative sealing member, provided on the insulative substrate, covering the semiconductor chips and the insulative member.

13. The semiconductor device according to claim 12, wherein the semiconductor chips are arranged in a circumferential fashion in a plane of the insulative substrate;

and

said second opening is provided at a substantially central portion of said circumference.

14. The semiconductor device according to claim 13, wherein regions of the insulative member, which are in contact with the semiconductor chips and the wiring element, have higher insulation properties than the sealing member.

15. The semiconductor device according to claim 13, further comprising an insulative resin lying between the insulative member and the semiconductor chips, said insulative resin having higher insulation properties than the sealing member.

16. The semiconductor device according to claim 13, further comprising external connection terminals provided on the wiring layers.