Transferable device-containing layer for silicon-on-insulator applications
First Claim
1. A method for forming an integrated circuit on a final substrate comprising the steps of:
- selecting a first substrate including a base substrate and an at least partially crystalline porous release layer;
forming a semiconductor layer on said porous release layer on said first substrate, said semiconductor layer having a bottom surface in contact with said porous release layer and an upper surface;
forming at least one semiconductor device in said upper surface of said semiconductor layer;
bonding said upper surface of said semiconductor layer to a temporary auxiliary substrate;
detaching said semiconductor layer from said first substrate by breaking apart said porous release layer;
bonding said bottom surface of said semiconductor layer to a final substrate; and
detaching said semiconductor layer from said temporary auxiliary substrate.
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Abstract
A method for forming an integrated circuit on an insulating substrate is described comprising the steps of forming a semiconductor layer on a seed wafer substrate containing an at least partially crystalline porous release layer, processing the semiconductor layer to form a “transferable” device layer containing at least one semiconductor device, and bonding said transferable device layer to a final, insulating substrate before or after separating said device layer from the seed wafer substrate. A second method, for separating a semiconductor layer from a seed wafer substrate, is described wherein an at least partially crystalline porous layer initially connecting the semiconductor layer and seed wafer substrate is split or broken apart by the steps of (i) introducing a fluid including water into the pores of said porous layer, and (ii) expanding said fluid by solidifying or freezing to break apart the porous layer. The at least partially crystalline porous layer may incorporate at least one porous silicon germanium alloy layer alone or in combination with at least one porous Si layer. Also described is an integrated circuit comprising the transfered device layer described above.
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Citations
30 Claims
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1. A method for forming an integrated circuit on a final substrate comprising the steps of:
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selecting a first substrate including a base substrate and an at least partially crystalline porous release layer;
forming a semiconductor layer on said porous release layer on said first substrate, said semiconductor layer having a bottom surface in contact with said porous release layer and an upper surface;
forming at least one semiconductor device in said upper surface of said semiconductor layer;
bonding said upper surface of said semiconductor layer to a temporary auxiliary substrate;
detaching said semiconductor layer from said first substrate by breaking apart said porous release layer;
bonding said bottom surface of said semiconductor layer to a final substrate; and
detaching said semiconductor layer from said temporary auxiliary substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 17)
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14. A method for forming an integrated circuit on a final substrate comprising the steps of:
- forming a semiconductor layer on a first substrate, said first substrate comprising a base substrate and an at least partially crystalline porous release layer;
processing said semiconductor layer to form at least one semiconductor device;
bonding said semiconductor layer to a final substrate; and
detaching said semiconductor layer from said first substrate by breaking apart said porous release layer. - View Dependent Claims (15, 16, 18, 19, 20, 21, 22, 23, 24, 25)
- forming a semiconductor layer on a first substrate, said first substrate comprising a base substrate and an at least partially crystalline porous release layer;
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26. A method for forming and detaching a semiconductor device layer comprising the steps of:
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forming a semiconductor layer on a first substrate, wherein said first substrate includes a base substrate and an at least partially crystalline porous release layer, and said at least partially crystalline porous release layer includes at least one porous silicon germanium alloy layer (Si1-xGex, where 0<
x<
1 and x may be constant or spatially variable) alone or in combination with at least one porous Si layer; and
detaching said semiconductor layer from said first substrate by breaking apart said porous release layer.
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27. A method for detaching a layer from a semiconductor substrate, said layer initially attached to said semiconductor substrate by a porous layer which is broken apart by the steps of:
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introducing a fluid including water into the pores of said porous layer; and
freezing said fluid whereby said fluid expands to break apart said porous layer. - View Dependent Claims (28, 29, 30)
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Specification