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Semiconductor device having an MIS transistor

  • US 6,774,441 B2
  • Filed: 01/13/2003
  • Issued: 08/10/2004
  • Est. Priority Date: 08/08/2002
  • Status: Expired due to Fees
First Claim
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1. A semiconductor device, comprising:

  • a semiconductor substrate having a main surface;

    a gate electrode provided on a main surface of said semiconductor substrate with an insulating film interposed;

    a first sidewall insulating film having two layers;

    a first layer of silicon oxide on a side surface of said gate electrode and having a lower portion extending on the main surface of said semiconductor substrate; and

    a second layer of silicon nitride on said silicon oxide film and having a lower surface over the lower portion of the first layer of silicon oxide;

    a second sidewall insulating film provided to cover a surface of said first sidewall insulating film and having a lower part extending under the lower surface of the second layer of silicon nitride to fill in a removed portion of said silicon oxide film;

    source and drain regions provided at positions on a main surface of said semiconductor substrate where said gate electrode is arranged in between; and

    a metal silicide layer arranged above said source and drain regions and at a position farther than said second sidewall insulating film from said gate electrode.

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