Radio communication apparatus and semiconductor device

• US 6,775,525 B1
• Filed: 10/26/2000
• Issued: 08/10/2004
• Est. Priority Date: 10/29/1999
• Status: Expired due to Fees

• Current Assignee: Renesas Electronics Corporation
• Original Assignee: Renesas Technology Corporation (Renesas Electronics Corporation)
• Inventors: Tanoue, Tomonori, Yamashita, Kiichi
• Primary Examiner(s): Urban, Edward F.
• Assistant Examiner(s): CHOW, CHARLES CHIANG
• Application Number:
  US09/697,210
• Time in Patent Office: 1,384 Days
• Field of Search: 455/127, 455/572, 455/550, 455/575, 455/341, 455/252.2, 455/253.2, 455/232.1, 455/90, 455/73, 455/80, 455/127.1, 455/127.3, 455/575.1, 455/550.1, 257/197, 257/580, 257/582, 257/198, 257/539, 257/540-543, 257/592, 257/723, 330/289, 330/295, 330/255, 330/296, 330/307, 330/275, 330/103, 330/277, 330/298, 330/149, 330/284, 330/51, 330/297, 361/106, 361/103, 219/251
• US Class Current: 455/127.3
• CPC Class Codes: H01L 2224/0603 Bonding areas having different sizes, e.g. different heights or widths
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/49111 the connectors connecting two common bonding areas, e.g. Litz or braid wires
• CPC Class Codes: H01L 29/7371 Vertical transistors
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/1305 Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13091 Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/19105 in a side-by-side arrangement on a common die mounting substrate
• CPC Class Codes: H01L 2924/30111 matching
• CPC Class Codes: H03F 1/0216 Continuous control
• CPC Class Codes: H03F 1/0261 with control of the polarisation voltage or current, e.g. gliding Class A
• CPC Class Codes: H03F 3/191 Tuned amplifiers H03F3/193, H03F3/195 take precedence
• CPC Class Codes: H03F 3/68 Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics power amplifiers using a combination of several semiconductor amplifiers H03F3/211; combinations of amplifiers using coupling networks with distributed constants H03F3/602
• CPC Class Codes: H03G 1/0005 Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal

Abstract

A radio communication apparatus including at the transmitter-side output stage a high-frequency power amplifier module that has incorporated therein a single-stage amplifier using one multi-finger type heterojunction bipolar transistor (HBT) or a multi-stage amplifier using a plurality of HBTs sequentially connected in cascade, and at the output end an antenna connected to the high-frequency power amplifier module, wherein first capacitors and first resistors are inserted in series between the input terminal of the high-frequency power amplifier module and the control fingers of the HBT, and second resistors are inserted between the control terminal of the high-frequency power amplifier module and the control fingers of the HBT and connected to the nodes of the first resistors and the first capacitors.

Claims

1. A radio communication apparatus having a high-frequency power amplifier module at a transmitter-side output stage, and an antenna connected to said high-frequency power amplifier module, said high-frequency power amplifier module comprising:

an input terminal;

an output terminal;

a control terminal;

a first voltage terminal;

a second voltage terminal;

a power amplifier formed by connecting a plurality of transistors in parallel each of which has a first terminal, a second terminal and a control terminal for controlling a current flowing between said first and second terminals;

first capacitors and first resistors connected in series between said input terminal and said control terminals of said transistors so that said capacitors are connected on said input terminal side while said resistors are connected on said control terminals side; and

second resistors connected between said control terminal and the nodes of said first capacitors and said first resistors that are connected to said control terminals of said transistors,

wherein said output terminal is connected to said first terminals of said transistors, said first voltage terminal to said first terminals of said transistors, and said second voltage terminal to said second terminals of said transistors.

4. A radio communication apparatus according to claim 1, wherein said high-frequency power amplifier module is of a multi-stage arrangement in which a plurality of said power amplifiers are sequentially connected in cascade, so that

said control terminals of said transistors of a first-stage one of said power amplifiers are connected to said input terminal,

said first terminals of said transistors of a last-stage one of said power amplifiers are connected to said output terminal,

said control terminals of said transistors of an intermediate-stage one of said power amplifiers are connected to said first terminals of said transistors of the previous-stage one of said power amplifiers, said first terminals being connected to said control terminals of said transistors of the following-stage one of said power amplifiers,

at least one of said first-stage, intermediate-stage and last-stage power amplifiers has said first capacitors, said first resistors and said second resistors incorporated therein, and

a predetermined control voltage is supplied to said control terminals of said power amplifiers.

6. A radio communication apparatus according to claim 1, wherein inductors are respectively connected between said control terminal and said second resistors.

7. A radio communication apparatus according to claim 1, wherein inductors are respectively connected between said second voltage terminal and said second terminals.

8. A radio communication apparatus according to claim 1, wherein said transistors constituting said power amplifier are monolithically formed on a single semiconductor substrate.

9. A radio communication apparatus according to claim 8, wherein a sensor transistor constituting a current-mirror circuit is monolithically formed on said semiconductor substrate.

10. A radio communication apparatus according to claim 8, wherein a sensor diode constituting a current-mirror circuit is monolithically formed on said semiconductor substrate.

2. A radio communication apparatus having a high-frequency power amplifier module at a transmitter-side output stage, and an antenna connected to said high-frequency power amplifier module, said high-frequency power amplifier module comprising:

an input terminal;

an output terminal;

a control terminal;

a first voltage terminal;

a second voltage terminal;

a power amplifier formed by connecting a plurality of transistors in parallel each of which has a first terminal, a second terminal and a control terminal for controlling a current flowing between said first and second terminals;

first capacitors and first resistors connected in series between said input terminal and said control terminals of said transistors so that said capacitors are connected on said input terminal side while said resistors are connected on said control terminals side;

second capacitors connected in parallel with said first resistors; and

second resistors connected between said control terminal and the nodes of said first capacitors and said first resistors that are connected to said control terminals of said transistors,

wherein said output terminal is connected to said first terminals of said transistors, said first voltage terminal to said first terminals of said transistors, and said second voltage terminal to said second terminals of said transistors.

3. A radio communication apparatus according to claim 2, wherein the DC voltage drop across each of said transistors in operation is about 0.15 V or below, the resistance value of each of said first resistors is about 1 Ω

or below and the capacitance value of each of said second capacitors is about 5 pF or below.

5. A radio communication apparatus according to claim 2, wherein said high-frequency power amplifier module is of a multi-stage arrangement in which a plurality of said power amplifiers are sequentially connected in cascade, so that

said control terminals of said transistors of a first-stage one of said power amplifiers are connected to said input terminal,

said first terminals of said transistors of a last-stage one of said power amplifiers are connected to said output terminal,

said control terminals of said transistors of an intermediate-stage one of said power amplifiers are connected to said first terminals of said transistors of the previous-stage one of said power amplifiers, said first terminals being connected to said control terminals of said transistors of the following-stage one of said power amplifiers,

at least one of said first-stage, intermediate-stage and last-stage power amplifiers has said first capacitors, said first resistors and said second resistors and said second capacitors incorporated therein, and

a predetermined control voltage is supplied to said control terminals of said power amplifiers.

11. A radio communication apparatus having a high-frequency power amplifier module at a transmitter-side output stage, and an antenna connected to said high-frequency power amplifier module, said high-frequency power amplifier module comprising:

an input terminal;

an output terminal;

a control terminal;

a first voltage terminal;

a second voltage terminal;

a power amplifier formed by connecting a plurality of transistors in parallel each of which has a first terminal, a second terminal and a control terminal for controlling a current flowing between said first and second terminals;

a single second capacitor and first resistors connected in series between said input terminal and said control terminals of said transistors so that said capacitor is connected on said input terminal side while said resistors are connected on said control terminals side; and

a single second resistor having one end connected in series with each of said first resistors and the other end connected to said control terminal,

wherein said output terminal is connected to said first terminals of said transistors, said first voltage terminal to said first terminals of said transistors, and said second voltage terminal to said second terminals of said transistors.

12. A radio communication apparatus according to claim 11, wherein one block or a plurality of blocks each of which is formed of a plurality of transistors that constitute said power amplifier are arranged, and said first capacitor and said second resistor are provided for each block.

13. A radio communication apparatus according to claim 12, wherein the thermal resistance difference between the transistors within each block is smaller than the thermal resistance of said power amplifier.

14. A radio communication apparatus according to claim 13, wherein the ratio of the thermal resistance of said power amplifier to the thermal resistance difference between the transistors within each block is equal to or less than about ½

the ratio of the sum of said second resistance and the parallel resistance of said first resistors to the parallel resistance of said first resistors connected in parallel within each block.

15. A semiconductor device comprising:

an input terminal;

an output terminal;

a bias terminal;

a power amplifier formed by connecting a plurality of transistors each having a first terminal, a second terminal and a control terminal for controlling the current flowing between said first terminal and said second terminal;

first capacitors C_2A˜

C_2N connected between said input terminal and said control terminals of said transistors and connected to said input terminal, and first resistors R_1A˜

R_1N connected in series with said first capacitors C_2A˜

C_2N, and connected to said control terminals of said transistors; and

second resistors R_2A˜

R_2N connected between said bias terminal and said control terminals of said transistors, and connected to the nodes of said first resistors R_1A˜

R_1N and said first capacitors C_2A˜

C_2N, said output terminal being connected to said first terminals of said transistors.

16. A semiconductor device according to claim 15, wherein second capacitors C_1A˜

C_1N are provided to be connected in parallel with said first resistors R_1A˜

R_1N.

19. A semiconductor device according to claim 15, wherein the DC voltage drop across each of said transistors in operation is about 0.15 V or below, the resistance value of each of said first resistors is about 1 Ω

or below and the capacitance value of each of said second capacitors is about 5 pF or below.

20. A semiconductor device according to claim 15, wherein a sensor transistor constituting a current-mirror circuit is monolithically formed on said semiconductor substrate in which said semiconductor device is formed.

21. A semiconductor device according to claim 15, wherein one block or a plurality of blocks each of which is formed of a plurality of transistors that constitute said power amplifier are arranged, and said first capacitor and said second resistor are provided for each block.

22. A semiconductor device according to claim 21, wherein the thermal resistance difference between the transistors within each block is smaller than the thermal resistance of said power amplifier.

23. A semiconductor device according to claim 21, wherein the ratio of the thermal resistance of said power amplifier to the thermal resistance difference between the transistors within each block is equal to or less than about ½

the ratio of the sum of said second resistance and the parallel resistance of said first resistors to the parallel resistance of said first resistors connected in parallel within each block.

17. A semiconductor device comprising:

the terminal;

an output terminal;

a bias terminal;

a power amplifier formed by connecting a plurality of transistors each having a first terminal, a second terminal and a control terminal for controlling the current flowing between said first terminal and said second terminal;

a single first capacitor C₂ connected between said input terminal and said control terminals of said transistors and connected to said input terminal, and first resistors R_1A˜

R_1N connected in series with said first capacitor C₂, and connected to said control terminals of said transistors; and

a single second resistor R₂ connected between said bias terminal and said control terminals of said transistors, and connected to the nodes of said first resistors R_1A˜

R_1N and said first capacitor C₂, said output terminal being connected to said first terminals of said transistors.

18. A semiconductor device according to claim 17, wherein second capacitors C_1A˜

C_1N are provided to be connected in parallel with said first resistors R_1A˜

R_1N.