Electro-optical device and manufacturing method thereof
First Claim
1. A method for manufacturing an electro-optical device which comprises a pixel section and a driver circuit over a same substrate comprising:
- process (A) for forming a region which includes an n-type impurity element in an active layer of an n-channel TFT which forms the driver circuit in a concentration range of 2×
1016 to 5×
1019 atoms/cm3;
process (B) for forming a region which includes an n-type impurity element in an active layer of an n-channel TFT which forms the driver circuit in a concentration range of 1×
1020 to 1×
1021 atoms/cm3;
process (C) for forming a region which includes a p-type impurity element in an active layer of a p-channel TFT which forms the driver circuit in a concentration range of 3×
1020 to 3×
1021 atoms/cm3;
process (D) for forming a region which includes an n-type impurity region in an active layer of a pixel TFT which forms the pixel section in a concentration range of 1×
116 to 5×
1018 atoms/cm3, characterized in that the process D is performed by adding an n-type impurity element by using as a mask a gate wiring that is covered by an insulating film comprising silicon.
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Abstract
An electro-optical device having high operation performance and reliability, and a manufacturing method thereof. A TFT structure which is strong agains hot carrier injection is realized by disposing a Lov region 207 in an n-channel TFT 203 which forms a driver circuit. Further, Loff regions 217 to 220 and offset region are disposed in an n-channel TFT 304 which forms a pixel section, and a TFT structure of low OFF current value is realized. Further, by reducing the n-type impurity element contained in Loff regions 217 to 220 to approximately 1×1016 to 5×1018 atoms/cm3, further reduction of OFF current can be performed.
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Citations
4 Claims
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1. A method for manufacturing an electro-optical device which comprises a pixel section and a driver circuit over a same substrate comprising:
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process (A) for forming a region which includes an n-type impurity element in an active layer of an n-channel TFT which forms the driver circuit in a concentration range of 2×
1016 to 5×
1019 atoms/cm3;
process (B) for forming a region which includes an n-type impurity element in an active layer of an n-channel TFT which forms the driver circuit in a concentration range of 1×
1020 to 1×
1021 atoms/cm3;
process (C) for forming a region which includes a p-type impurity element in an active layer of a p-channel TFT which forms the driver circuit in a concentration range of 3×
1020 to 3×
1021 atoms/cm3;
process (D) for forming a region which includes an n-type impurity region in an active layer of a pixel TFT which forms the pixel section in a concentration range of 1×
116 to 5×
1018 atoms/cm3, characterized in that the process D is performed by adding an n-type impurity element by using as a mask a gate wiring that is covered by an insulating film comprising silicon.- View Dependent Claims (2)
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3. A method for manufacturing an electro-optical device which comprises a pixel section and a driver circuit over a same substrate comprising:
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process (A) for forming a region which includes an n-type impurity element in an active layer of an n-channel TFT which forms the driver circuit in a concentration range of 2×
1016 to 5×
1019 atoms/cm3;
process (B) for forming a region which includes an n-type impurity element in an active layer of an n-channel TFT which forms the driver circuit in a concentration range of 1×
1020 to 1×
1021 atoms/cm3;
process (C) for forming a region which includes a p-type impurity element in an active layer of a p-channel TFT which forms the driver circuit in a concentration range of 3×
1020 to 3×
1021 atoms/cm3;
process (D) for forming a region which includes an n-type impurity region in an active layer of a pixel TFT which forms the pixel section in a concentration range of 1×
1016 to 5×
1018 atoms/cm3, characterized in that an n-type impurity region (c) and an offset region formed in contact with the n-type impurity region (c) are formed in the process (D).- View Dependent Claims (4)
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Specification