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Antiparallel magnetoresistive memory cells

  • US 6,777,730 B2
  • Filed: 08/29/2002
  • Issued: 08/17/2004
  • Est. Priority Date: 08/31/2001
  • Status: Expired due to Term
First Claim
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1. A ferromagnetic thin-film based digital memory, said memory comprising:

  • a plurality of bit structures electrically interconnected with information storage and retrieval circuitry, said bit structures comprising;

    a relative orientation maintenance intermediate layer having two major surfaces on opposite sides thereof; and

    a pair of memory films of an anisotropic ferromagnetic material each on a corresponding one of said relative orientation maintenance intermediate layer major surfaces, said relative orientation maintenance intermediate layer being of a material and a selected thickness so as to maintain magnetizations of said memory films oriented in substantially opposite directions, said pair of memory films having sufficiently similar magnetic moments so as to substantially maintain magnetization orientations thereof despite magnetic fields occurring thereabout due to changes of magnetizations orientations of those said pairs of memory films in other said bit structures in said plurality thereof under direction of said information storage and retrieval circuitry; and

    interconnection electrodes having pairs thereof each in electrically conductive contact with a corresponding one of said bit structures with members in a said interconnection electrode pair contacting a corresponding bit structure being spaced apart from one another and each near or at edges of a said relative orientation maintenance intermediate layer major surface with at least one member of a said interconnection electrode pair being electrically coupled to said information storage and retrieval circuitry.

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