×

Symmetric trench MOSFET device and method of making same

  • US 6,777,745 B2
  • Filed: 06/14/2001
  • Issued: 08/17/2004
  • Est. Priority Date: 06/14/2001
  • Status: Expired due to Term
First Claim
Patent Images

1. A trench MOSFET transistor device comprising:

  • a drain region of a first conductivity type;

    a body region of a second conductivity type provided over said drain region, said drain region and said body region forming a first junction;

    a source region of said first conductivity type provided over said body region, said source region and said body region forming a second junction;

    source metal disposed on an upper surface of said source region;

    a trench extending through said source region, through said body region and into said drain region; and

    a gate region comprising an insulating layer lining at least a portion of said trench and a conductive region within said trench adjacent said insulating layer, wherein (a) said body region is separated from said source metal, and (b) a doping profile along a line normal to upper and lower surfaces of said device is such that, (i) the doping profile is non-uniform within the body region, (ii) within said body region and within at least a portion of said source and drain regions, the doping profile on one side of a centerplane of the body region is substantially symmetric with the doping profile on an opposite side of the centerplane, and (iii) the doping profile comprises a substantially peaked central region.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×