Group-III nitride compound semiconductor device

• US 6,777,805 B2
• Filed: 09/30/2002
• Issued: 08/17/2004
• Est. Priority Date: 03/31/2000
• Status: Active Grant

• Current Assignee: Toyoda Gosei Company Limited (Toyota Motor Corporation)
• Original Assignee: Toyoda Gosei Company Limited (Toyota Motor Corporation)
• Inventors: Hirano, Atsuo, Uemura, Toshiya, Ota, Koichi, Nagasaka, Naohisa
• Primary Examiner(s): Nelms, David
• Assistant Examiner(s): Nguyen, Dao H.
• Application Number:
  US10/240,250
• Publication Number:
  US 20030107053A1
• Time in Patent Office: 687 Days
• Field of Search: 257/81, 257/94, 257/99, 257/745, 257/103, 257/200
• US Class Current: 257/745
• CPC Class Codes: H01L 2224/02166 Collar structures
• CPC Class Codes: H01L 2224/05552 in top view
• CPC Class Codes: H01L 2224/0603 Bonding areas having different sizes, e.g. different heights or widths
• CPC Class Codes: H01L 24/05 of an individual bonding area
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/12041 LED
• CPC Class Codes: H01L 2924/12042 LASER
• CPC Class Codes: H01L 2924/1301 Thyristor
• CPC Class Codes: H01L 2924/181 Encapsulation
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/38 with a particular shape

Abstract

An object of the present invention is to provide a large-size light-emitting device from which uniform light emission can be obtained.

That is, in the present invention, in a device having an outermost diameter of not smaller than 700 μm, a distance from an n electrode to a farthest point of a p electrode is selected to be not larger than 500 μm.

Claims

1. A Group III nitride compound semiconductor device, comprising:

an n electrode; and

a p electrode, wherein

an outermost diameter of said Group III nitride compound semiconductor device is not smaller than 700 μ

m, and

a distance from said n electrode to a farthest point of said p electrode is not larger than 500 μ

m.

2. A Group III nitride compound semiconductor device according to claim 1, wherein said device is a rectangle in plan view, and has a length of not smaller than 500 μ

m on one side.

3. A Group III nitride compound semiconductor device according to claim 1, wherein said n electrode includes an n seat electrode and an n auxiliary electrode, which extends from said n seat electrode, and at least one part of said n auxiliary electrode extends to a central portion of said device in a plan view of said device.

4. A Group III nitride compound semiconductor device according to claim 1, wherein said p electrode includes a p seat electrode and a p auxiliary electrode, which extends from said p seat electrode.

5. A Group III nitride compound semiconductor device according to claim 4, wherein said devices further comprises:

a translucent electrode on which said p electrode is provided,

wherein a distance between any point of said translucent electrode and either said p seat electrode or said p auxiliary electrode is in a range of from 0 to 1000 μ

m.

6. A Group III nitride compound semiconductor according to claim 4, wherein said n electrode includes an n seat electrode and an n auxiliary electrode, which extends from said n seat electrode, and said n auxiliary electrode and said p auxiliary electrode are arranged like a comb.

7. A Group III nitride compound semiconductor device according to claim 6, wherein said n seat electrode comprises a plurality of n seat electrodes and said p seat electrode comprises a plurality of p seat electrodes.

8. A Group III nitride compound semiconductor device according to claim 4, wherein said n electrode includes an n seat electrode and an n auxiliary electrode, which extends from said n seat electrode, and said n auxiliary electrode and said p auxiliary electrode include portions disposed in parallel with each other.

9. A Group III nitride compound semiconductor device according to claim 8, wherein said n seat electrode comprises a plurality of n seat electrodes and said p seat electrode comprises a plurality of p seat electrodes.

10. A Group III nitride compound semiconductor device according to claim 1, including a light-emitting device structure or a light-receiving device structure.

11. A Group III nitride compound semiconductor device, comprising:

an n electrode; and

a p electrode, wherein

an outermost diameter of said Group III nitride compound semiconductor device is not smaller than 700 μ

m, and

a distance X μ

m from any point on said p electrode to said n electrode satisfies the requirement;

12. A Group III nitride compound semiconductor device, comprising:

an n electrode;

an n-type semiconductor layer with a resistivity of from 0.004 to 0.01 Ω

·

m and a thickness of from 3 to 5 μ

m; and

a p electrode, wherein

an outermost diameter of said Group III nitride compound semiconductor device is not smaller than 700 μ

m, and

a distance from said n electrode to a farthest point of said p electrode is in a range of from 300 to 500 μ

m.