Method of producing suspended elements for electrical connection between two portions of a micromechanism which can move relative to one another

• US 6,779,247 B1
• Filed: 09/29/2000
• Issued: 08/24/2004
• Est. Priority Date: 10/01/1999
• Status: Expired due to Term

• Current Assignee: STMicroelectronics SRL (STMicroelectronics NV)
• Original Assignee: STMicroelectronics SRL (STMicroelectronics NV)
• Inventors: Mastromatteo, Ubaldo, Murari, Bruno, Vigna, Benedetto
• Primary Examiner(s): Norton, Nadine G.
• Assistant Examiner(s): DEO, DUY VU NGUYEN
• Application Number:
  US09/676,017
• Time in Patent Office: 1,425 Days
• Field of Search: 438/745, 438/706, 438/689, 438/690, 438/700, 438/704
• US Class Current: 29/603.01
• CPC Class Codes: G11B 5/53 Disposition or mounting of heads on rotating support
• CPC Class Codes: G11B 7/122 Flying-type heads, e.g. analogous to Winchester type in magnetic recording
• CPC Class Codes: G11B 7/22 Apparatus or processes for the manufacture of optical heads, e.g. assembly
• CPC Class Codes: Y10T 29/49021 Magnetic recording reproducing transducer [e.g., tape head, core, etc.]
• CPC Class Codes: Y10T 29/49041 with significant slider/housing shaping or treating

Abstract

A method of producing suspended elements for electrical connection between two portions of a micro-mechanism that can move relative to one another provides for the formation of a layer of sacrificial material, the formation of the electrical connection elements on the layer of sacrificial material, and the selective removal of the layer of sacrificial material beneath the electrical connecting elements, the layer of sacrificial material being a thin film with at least one adhesive side that can be applied dry to the surface of the micro-mechanism.

Claims

1. A method of producing suspended elements between two portions of a micro-mechanism containing components that move relative to one another on a semiconductor wafer, the method comprising:

applying the adhesive side of a dry film over the micro-mechanism on the semiconductor wafer to immobilize the moveable components without penetrating any cavities therein;

forming a mask on the dry film;

depositing, developing, and selectively removing a sacrificial layer from the mask and the dry film to form windows on the dry film, the dry film protecting the cavities from infiltration of liquids during the developing step;

opening the windows by selectively etching the dry film;

depositing a dielectric layer to cover the windows without penetrating any underlying cavities;

depositing a conductive layer that is attached to at least one moveable portion of the micro-mechanism; and

selectively removing the conductive layer and the dielectric layer, and removing the dry film to form electrical connection elements suspended between the two portions of the micro-mechanism containing components that move relative to one another.

2. The method of claim 1, wherein the thin film is applied to the front surface of the semiconductor wafer.

3. The method of claim 1, wherein the thin film comprises a film of dry photosensitive resin.

4. The method of claim 3, wherein the thin film is of the type known commercially by the name RISTON®

.

5. The method of claim 1, wherein the micro-mechanism comprises an electrostatic micro-actuator used for the fine positioning of a reading/writing transducer in a hard-disk reading/writing unit.

6. The method of claim 1, wherein forming the mask comprises depositing a layer of silicon dioxide or aluminum on the film at low temperature and selectively removing the sacrificial layer comprises selectively removing the silicon dioxide or aluminum layer by a photolithographic technique.

7. The method of claim 1, further comprising, gluing a respective reading/writing transducer onto each component and soldering terminals of the transducer to the electrical connection elements of the respective micro-mechanism, and then dividing the semiconductor wafer with the transducers mounted by cutting it into a plurality of individual dice.

8. The method of claim 1, wherein applying the adhesive side of a dry film further comprises reducing the thickness of the wafer after the dry film has been applied.

9. The method of claim 1, wherein applying the adhesive side of a dry film comprises a subsequent step of applying a second adhesive layer to a back surface of the semiconductive wafer, the second adhesive layer having an exposed adhesive surface.

10. The method of claim 1, further comprising removing the dry film to release the moveable components.

11. The method of claim 10, further comprising, after selectively removing the conductive layer and the dielectric layer and before removing the dry film:

dividing the wafer into dice;

attaching a slider to each die;

gluing the die and the attached slider to a gimbal; and

attaching wires to the die.

12. The method of claim 11, further comprising the mounting of a respective reading/writing transducer on each die.

13. The method of claim 10, wherein removing the dry film comprises removing the dry film by oxygen plasma etching.

14. The method of claim 10, wherein removing the dry film comprises removing the dry film by immersion in a bath of NaOH.